2SB1031
Abstract: 2SD1435 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1435 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications
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2sd14352sb1031150manpn power darlington transistors |
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2SB1031
Abstract: 2SD1435
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -8A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1435 APPLICATIONS
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-100v2sd1435-16ma-150ma+12sb1031
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nec 2sc3157
Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419
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2sd16602sd1198a2sd16222sd1631+132sc28832sd14062sc32992sd14122sd1296nec 2sc31572sd9992sd13172sc36942sc37602sd20612sd2239nec 1678
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2SB1031
Abstract: 2SD1435
Contextual Info: HITACHI 2SD1435 R SILICON NPN EPITAXIAL LOW FREQ UENC Y POWER AM PLIFIER HIGH CURRENT SW ITCHING CO M PLEM ENTARY PAIR WITH 2SB1031<gs u 1. Rase 2. I fdtaî titti C o lle c t o r (Flange 3. tin n ie r ( f î i n i e n i i o r u in m it » 16 , a* 11 (TO-3P)
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2sd14352sb1031 |
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2SD1435
Contextual Info: í HITACHI 2SD1435K SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING COMPLEMENTARY PAIR WITH 2 S B i0 3 W t. iiasc Coüçcux 2. Inuuct ;í>íl K-,rlvíí>lí.'l 1(1 Mint (TO-3P) L«*iUliitU I ABSOLUTE MAXIMUM RATINGS (Ta=25°C) ¡symbol
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2sd1435k2sd14352sb1031200roa+1150ma
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2SD1435
Abstract: 2SB1031 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Inchange Semiconductor Product Specification 2SD1435 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications
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2sd14352sb1031150manpn power darlington transistors |
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2SC3181
Abstract: 2SD1526 1286-Z 2SD2239 2SC2060 2Sd1448 2SD400 2SD798 2SD822 2SD1114
Contextual Info: 236 - a Si £ Type No. « » « fe' T T fci T 2SD 12 7 5A 2SD 1 27 6 2SD 12 7 6A 2SD 1 27 7 2SD 12 7 7A 2SD 1278 2SD 1 28 0 2SD 1 2 81 2SD 1 2 82 2SD 1 2 83 2SD 1284 2SD 128 5 > 2S D 1286 TOSHIBA 1 NEC 31 HITACHI § t FUJITSU I ta t MATSUSHITA = m MITSUBISHI
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2sd17652sd15892sd19332sd1590+132sd16042sd20252sd8222sd16192sc31812sd15261286-z2sd22392sc20602sd14482sd4002sd7982sd1114
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2SD1165A
Abstract: D 1163 A 2SD1084 D1138 2sc2373 2Sd1165 2sD1307 2SD1961 2SD1265 1170 T
Contextual Info: - 232 - m € Type No. € tt Maniif. =M H SANYO nt s TOSHIBA a b NEC 31 HITACHI m ± il FUJITSU ft T MATSUSHITA jr. H MITSUBISHI □ — A ROHM 2 S D 1135 <- s a 2 S D 1136 * s a 2 S D 1137 ✓ s a 2SD743A 2SD857 2SD1896 s a 2SC2336A 2SC2660 2SD1562A 2 S D 1138 ,
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2sd11352sd11362sd11372sd1236+152sd10602sd5262sd5252sd743a2sd857b2sd1165ad 1163 a2sd1084d11382sc23732sd11652sd13072sd19612sd12651170 t
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2SD454
Abstract: 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526
Contextual Info: - £ m « it Manuf. Type No. 2SD 439 ^ 2SD 457 * 2SD 459 * 2SD 460 * * 2SD 461 * 2SD 463 — * 2SD 454 ^ 3K SANYO = $ B n 2SC2236 2SC1449 2SD635 2SD970 K 2SD633 2SD970OO %t9 7 C 2SD473(H) 2SD524 2SD473(H) 2SC2120 2SC2001 ED 2SD471 2SD 469 -— m « T a *
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2sd4392sd4572sd6422sd1196+162sd6352sd6332sd6572sd5232sc14492sc22362sd4542sc9012sc16672sd400 e2sc2516 nec2sc21202sd4732sd6472s08672sd526
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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o220fsp-10sp-12sp-12ta+111560d2sk1058 equivalentmbm300bs6hitachi mosfet2sk1270transistor 2sk 122sk16452sk975 equivalentequivalent transistor 2sk2sk1058 mosfet application notes2sc297
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TE 1539
Abstract: 2sc2233 2sd1314 2SC4008 1537A 2sc2562 2sc4152 2SD1405 2SD1539 2SC2459
Contextual Info: - m -s Type No. 2SD 1510/ 2SD 1511 2SD 1512 2SD 1513 ^ 2SD 1514 2SD 1516 ¿ 2SD 1517 2SD 1518 2SD 1519 2SD 1520 2SO 1520 L/S icri 1co i 2SD 2S0 2SD 2SO 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 1522 1523 1524 1526 1527 / 1528 1529
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2sd15102sd15112sd15122sd1513+162sd15142sd15162sd15172sd15182sd15192sd1520te 15392sc22332sd13142sc40081537a2sc25622sc41522sd14052sd15392sc2459
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mg30g1bl3
Abstract: 2SD472 MG30GIBL3 2SC2603 2SD610 2SC3170 2SC1815 2sc2238 2SC2603 F 2sd882 hitachi
Contextual Info: - 218 - m « Type No. 2SD 602 , 2SD 605 j 2SD 606 2SD 608 rJ 610 612 612K 613 ✓ 614 617 / 2SD 619 2SD 620 2SD 622 2SD 628H 2S0 623 2SD 632 2SD 633 2SD 634 637 638 639 641 643 644 3 2SC3330 2SC1815 2SD776 S £ -y-y'ry v-ytr > = 8 2SD596 B aZ HITACHI 2SC2618
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2sd6022sd602a2sd6032sd604+152sd6052sd6062sd6082sd6102sd6122sd612kmg30g1bl32sd472mg30gibl32sc26032sc31702sc18152sc22382sc2603 f2sd882 hitachi
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2SB669
Abstract: NEC 2SD180 2SD180 NEC 2SC3054 toshiba c 2238 k 1191 1198A 2SD563A 2SD1812 2SD1176
Contextual Info: - « 2 SD 1171«'' fö T 2SD 1 1 7 5 / K T 2 S D 1176 _ K T 2S0 117 6A T = & SANYO $ M TOSHIBA O Manuf. If tt in a g T y p e No. ÎL H IT ACHI S i ® FUJITSU fé T MATSUSHITA = » M IT S U B I S H I □ 233 — A ROHM 2 SD 1728 2 SD 1391 2 SD 970 K 2S D 1 1 9 2
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2sd11712sd11752sd11762sd1176a+152sd11772sd17742sm7742sc26602sd669a2sd14352sb669nec 2sd1802sd180 nec2sc3054toshiba c 2238k 11911198a2sd563a2sd1812
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transistor 2SB618
Abstract: 3A/fllnm 80
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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2sa7332sj742sk1702sj76+82sk2132sj772sk2142sj1032sk2462sj109transistor 2sb6183a/fllnm 80
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MG30G1BL3
Abstract: MG50G1BL3 669a h 669A MG50G1BL3 toshiba 2SD427 2SCI815 2SD650 2SD649 2SD646A
Contextual Info: - m « Type No. tt « Manuf. = B ;¥ SANYO TOSHIBA K s 2SD 646 — • Ä $ MG50G1BL3 2SD 646A M $ MG30G1BL3 2SD 647 K 2: 2SD647A 2SD 648 Ä 3* 2SD648A 2SD 649 * 2 2SD 650 - s a 2SD 654 3 * 2SD545 2SD 655 . B ÎL 2SD1012 2SD 656 Ä S 2SD 657 * $ 2SD 661 fâ
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2sd6452sd6462sd646a2sd647+132sd6482sd6492sd6502sd6542sd6552sd656mg30g1bl3mg50g1bl3669ah 669amg50g1bl3 toshiba2sd4272sci815
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2SD1431
Abstract: 2SD1415 2SD1432 2-16D3A 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423
Contextual Info: - 248 - Ta-25T>, *E[l[äTc=25'C M S ?± 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423 2SD1423A & PSW/D Vq b q VcEQ (V) (V) 60 S Ic C D O Pc Pc* ICBO (A) (ff) (ff) (max) <//A) 60 7 2 VcB (V) S f (min) i U (max) 30 100 60 2000 15 0 0 0 f t ( T a = 2 5 tC )
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2sd14172sd14182sd14192sd1420+102sd14212sd14232sd1423a2sd1424ktsd14422sb9252sd14312sd14152sd14322-16d3a
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2SB1039
Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
Contextual Info: - 72 - w. T a = 2 5 sC 1* E P Í Í T c = 2 T O m 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 2SB1036 2SB1037 2SB1038 2SB1039 2SB1045 2SB1046 2SB1048 2SB1050 2SB Î052 2SB1054 2SB1055 2SB1056 2SB1057 2SB1058 2SB1059 2SB1061 2SB1062 2SB1063
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2sb10282sb10302sb1030a2sb1031k+102sb1032k2sb10332sd14992sb10632sd1505o-220ab2sb10392sb10452sb10382sb1035
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1132
Abstract: 2SD1307 2SM77 1130b 2sc2484 2SD1175 2sd1176 2SD1111 2SD602 2SD987
Contextual Info: - m tt % £ = m SANYO S M TOSHIBA b NEC a B ÍI HITACHI "M dr FUJITSU iï fâ T MATSUSHITA 2SD 1092 — - S 2! 2SD 1096 B it 2SD 1097 B it 2SD1171 2SD 1098 B it 2SD1171 2SD 1099 B ir 2SD1175 2SD 1100 a ii 2SD 1101 B it 2SD 1102 B it 2SD1173 2SD 1103 B it 2SD1175
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2sd16412sc30762sd9922sd874+142sd17332sd11712sd11752sd13842sd104811322sd13072sm771130b2sc24842sd11762sd11112sd6022sd987
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2sa914o-1262sa9002sc2556+112sc2556alm317ko-220lm317tthinki transistor catalogaudio amplifier icbd249c catalogaudio high power amplifier3dd3012sc32292sa747
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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2n30542n327412n42402n4908+162n3054a2n37662n42732n49092n30552n3767strs6307str54122n3055 to-220s2000a3strs6309s2000a2bdw362sc3883strs6308str6020
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2SD1460
Abstract: 2SD1477 2SD1473 2sd1467 2SD1422 2sd1425 2SB1029 2SD1466 2SD1058 2SD1407
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1401 1500 7 3.5A 80W(Tc=25ºC) 150 25 5 500 3* 120W 2SD1402
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2sd14012sd14022sd14032sd1404+152sd14052sd14062sd14072sd14082sd14092sd14102sd14602sd14772sd14732sd14672sd14222sd14252sb10292sd14662sd1058
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