2SD1511 Search Results

2SD1511G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4 000

2SD1511

Abstract: power darlington npn transistor
Contextual Info: Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification ● 0.5±0.08 1.5±0.1 2.5±0.1 0.4±0.04 3.0±0.15 3 • Absolute Maximum Ratings +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE

2SD1511

Contextual Info: Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification 4.5±0.1 ● • * 1.5±0.1 Parameter Symbol Ratings Unit VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package ■ Features • Code MiniP3-F2 • Pin Name 1: Base 2: Collector 3: Emitter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 1.6±0.2 1.5±0.1 Symbol Rating Collector-base voltage (Emitter open) VCBO

Contextual Info: Transistor 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 ● • * 1.5±0.1 Parameter Symbol Ratings Unit VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current

2SD1511G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: P ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 1.6±0.2 Parameter Symbol Rating Collector-base voltage (Emitter open)

2SD1511

Abstract: 2sd151
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 1.6±0.2 1.5±0.1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SD1511

Contextual Info: Transistors 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 1.6±0.2 1.5±0.1 Symbol Rating Collector-base voltage Emitter open VCBO 100 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 1.6±0.2 2.5±0.1 3˚ 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 1.0+0.1 –0.2

panasonic transistor marking pr

Abstract: 2SD1511
Contextual Info: Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification ● 0.5±0.08 1.5±0.1 2.5±0.1 0.4±0.04 3.0±0.15 3 • Absolute Maximum Ratings +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE

2SD1511G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package ■ Features • Code MiniP3-F2 • Pin Name 1: Base 2: Collector 3: Emitter

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463