2SD151 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SB1068 TRANSISTOR PNP 1. EMITTER FEATURES z Low Collector Saturation Voltage z High DC Current Gain z High Collector Power Dissipation z Complementary To The 2SD1513 NPN Transistor

2SD1511G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4 000

2SD1516

Abstract: ic 746
Contextual Info: P o w er T ra n s is to rs 2SD1516 2SD1516 Silicon NPN Epitaxial Planar Type Package D im ensions Pow er A m plifier, Pow er S w itching 10.5 1 0 .5 • Features • Low co llector-em itter satu ration vo ltag e VcEisao • Good linearity of DC cu rrent gain (hFE)

2SD1510

Abstract: ATL2 743 ic
Contextual Info: Pow er T ransistors 2SD1510 2SD1510 Silicon PNP Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier • Features • High DC cu rren t gain hps 2.9max. • High speed switching • “Full Pack” package for simplified mounting on a heat sink with one

2SD1511

Abstract: power darlington npn transistor
Contextual Info: Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification ● 0.5±0.08 1.5±0.1 2.5±0.1 0.4±0.04 3.0±0.15 3 • Absolute Maximum Ratings +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE

2SD1510

Abstract: 743p 44max
Contextual Info: Power Transistors 2SD1510 2SD1510 Silicon PNP Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier U n it r m m 4 .4 m a x . • Features • High DC cu rren t gain hra 2.9max • High speed switching • “Full P ack” package for simplified m ounting on a h eat sink with one

2SD1480

Abstract: 2SD1517
Contextual Info: Pow er T ra nsistors 2SD1517 2SD 1517 Silicon NPN Epitaxial Planar Type Package Dimensions Power Amplifier, Power Switching • Features U n i t I mm 4.4m ax. • Low collector-em itter saturation voltage VcE(sao 2.9 ma\ I • Good linearity of DC current gain (h ^ )

1271A

Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
Contextual Info: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513

2SD1511

Contextual Info: Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification 4.5±0.1 ● • * 1.5±0.1 Parameter Symbol Ratings Unit VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current

2SD1480

Abstract: 2SD1517
Contextual Info: Power Transistors 1 ^ 3 2 0 5 4 0 0 1 1 15 7 347 « P N C E PANASONIC INDL/ELEK SEMI 2SD1517 2SD1517 fc.'iE D Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Amplifier, Pow er Switching • • • • • U n it ! mm 4.4m ax. 10.2m ax. • Features

Contextual Info: TO-92 Plastic-Encapsulate Transistors 2SD1513 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current 2 A ICM: Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package ■ Features • Code MiniP3-F2 • Pin Name 1: Base 2: Collector 3: Emitter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 1.6±0.2 1.5±0.1 Symbol Rating Collector-base voltage (Emitter open) VCBO

Contextual Info: Transistor 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 ● • * 1.5±0.1 Parameter Symbol Ratings Unit VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current

2SB1068

Abstract: 2SD1513 PA33
Contextual Info: NPN SILICON TRANSISTOR 2SD1513 D E S C R IP TIO N The 2S D 1513 is designed for use in driver and output stages of PAC KAG E D IM E N S IO N S audio frequency amplifiers. in millimeters inches FEATURES • Low Collector Saturation Voltage 5.2 MAX. V c E (s a t) : 0.2 0 V T Y P . ( Ic = 1 .0 A , l B = 1 0 m A )

2SD1512

Contextual Info: Transistor 2SD1512 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Ta=25˚C Parameter Symbol Ratings Unit 100 V 100 V 15 V 50 mA 20

Contextual Info: Transistor 2SD1512 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1513 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Low Collector Saturation z High DC Current Gain z Complementary to The 2SB1068 PNP Transistor 3. BASE

5n5o

Contextual Info: 2SD1519O Ä 7 T u \z “ \_r . rnm 16. o MAX. 4# m iS i t EE "C'ÿ o :V q b q = i 4 0 0 V • : ^CE s a t ~ 5 V ( * * ) <äiö*£E^ ^o 0 3 .6 ± o . 2 1.5 ( I c = 8A , IQ — 2 A ) ^ 'í '7 f : t f - 1.0 a 1/ ? £ * ÍbJ i f i ¿1 y * ß s (ift^ ) ( I c p = 7 A , l B 2 ( e n d -) ^ A )

J6 transistor

Abstract: 2SD1513 PA33 2sb1068 2sb10681
Contextual Info: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o

2SD1516

Contextual Info: Power Transistors • ^32854 0011155 574 « P N C E PANASONIC INDL/ELEK SEMI 2SD1516 2SD1516 b'ÍE D Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Amplifier, Pow er Switching 10.5 + 0.5 ■ Features • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e (VcE<sat>)

2SD1511G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: P ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 1.6±0.2 Parameter Symbol Rating Collector-base voltage (Emitter open)

2SD1511

Abstract: 2sd151
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 1.6±0.2 1.5±0.1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)