2SB1031
Abstract: 2SD1435 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1435 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications
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2sd14352sb1031150manpn power darlington transistors |
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2SB1031
Abstract: 2SD1435
Contextual Info: HITACHI 2SD1435 R SILICON NPN EPITAXIAL LOW FREQ UENC Y POWER AM PLIFIER HIGH CURRENT SW ITCHING CO M PLEM ENTARY PAIR WITH 2SB1031<gs u 1. Rase 2. I fdtaî titti C o lle c t o r (Flange 3. tin n ie r ( f î i n i e n i i o r u in m it » 16 , a* 11 (TO-3P)
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2sd14352sb1031 |
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2SD1435
Abstract: 2SB1031 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Inchange Semiconductor Product Specification 2SD1435 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications
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2sd14352sb1031150manpn power darlington transistors |
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2SB1031
Abstract: 2SD1435 2SD143
Contextual Info: HITACHI 2SB1031 R SILIC O N P N P EPITA XIA L LO W F R E Q U E N C Y P O W E R A M P L IF IE R C O M P LE M E N T A R Y PA IR W ITH 2 S0 1 4 3 5 ♦3 2 10.2 il Vpß LJJ i Ü a 8 31 * li i Mtnut - ¡i* 8| 1. Base Ï Si _ 2. Collccior (Flange L I JJA tM
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2sb10312sd14352sbi03i-16nia+12sd143
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2SB1039
Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
Contextual Info: - 72 - w. T a = 2 5 sC 1* E P Í Í T c = 2 T O m 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 2SB1036 2SB1037 2SB1038 2SB1039 2SB1045 2SB1046 2SB1048 2SB1050 2SB Î052 2SB1054 2SB1055 2SB1056 2SB1057 2SB1058 2SB1059 2SB1061 2SB1062 2SB1063
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2sb10282sb10302sb1030a2sb1031k+102sb1032k2sb10332sd14992sb10632sd1505o-220ab2sb10392sb10452sb10382sb1035
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2SB1031
Contextual Info: HITACHI 2SB1031 K SILICON PN P EPITAXIAL LOW FREQUENCY PO W ER A M P U F llR COMPLEMENTARY PAIR WITH 2S D 1435 MS in a Liu 1. Bue 2. Collector (FUnge Î . E m iu c i CDtmetmoos in nun) (typ » :'»i> (TO-3P) I ABSOLUTE MAXIMUM RATINGS (Ta=25*C) Hem Symbol
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2sb1031-150ma-16nia |
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2SB1031
Abstract: 2SD1435
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -8A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1435 APPLICATIONS
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-100v2sd1435-16ma-150ma+12sb1031
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2SB1031
Abstract: 2SD1435 2SD143
Contextual Info: H ITA C H I 2 S B 1 0 3 1 R SILICON PN P EPITAXIAL LOW FR E Q U E N C Y P O W E R AM PLIFIER C O M PLEM EN TA RY PAIR WITH 2 S 0 1 4 3 5 «.no.! W -Owy _ n .Lii OH 1. Base 2. Coilecior (Flange 3. Emitter (Dimensions in mm} r w p LU (T O -3P ) • A B S O L U T E MAXIMUM RA TIN G S (Ta=25cC>
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2sb10312sd14352sd143 |
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B0346
Abstract: KT818G SM2184 B0744C b0912 KT818 SM2183 BOW46 2SA1444 2SB554R
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 40 50 60 60 60 60 60 60 60 60 60 60 60 20 20 20 20 20 20 20 25 25 35 g:~~~; ~~t~~:~ St ~~ ~g ~~ 2SB707 B0346 BOT82F 2SA1292 2SA1444 BOW45 2SB883 SK3221 2N6246 2SA1042 SM2183 BOT84 BOT84 BOT84
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v10torola2sal1162sal1692sb600+132sb645rioa1302o-247varb0346kt818gsm2184b0744cb0912kt818sm2183bow462sa14442sb554r
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2SA818
Abstract: 2SB681 2SB849 2SC4341 2SB681 TOSHIBA 2SB601 2SB686 2SB688 2SB558 2sb669
Contextual Info: 49 - S € Type No. a « Manuf. E ft SANYO 2SB 648 B ÍL 2SA1209 2SB 648A S ÍL 2SA1209 2SB 649 ÍL 2SB 649A S ÎL 2SB 650 H ÎL 2SB 653A ÍL 2SB 654A ÎL 2S8 655A i 2SB 668 • 2SA1011 Ä TOSHIBA Is NEC ÍL HITACHI i t i FUJITSU fâ T MATSUSHITA h m MITSUBISHI
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2sa12092sa11422sa8182sa1284+142sa12202sb10862sa10112sa9682sa1220a2sb6812sb8492sc43412sb681 toshiba2sb6012sb6862sb6882sb5582sb669
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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o220fsp-10sp-12sp-12ta+111560d2sk1058 equivalentmbm300bs6hitachi mosfet2sk1270transistor 2sk 122sk16452sk975 equivalentequivalent transistor 2sk2sk1058 mosfet application notes2sc297
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transistor 2SB618
Abstract: 3A/fllnm 80
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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2sa7332sj742sk1702sj76+82sk2132sj772sk2142sj1032sk2462sj109transistor 2sb6183a/fllnm 80
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2SB1013
Abstract: 2SB1014 2SB1074 2SB1060 2SB1047 2sb1099 2SB1100 2SB1039 2SB1040 2SB1041
Contextual Info: Page 1 of 2 Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB1001 -20 -6 -2A 1W 150 200 -2 -100 80* 50 2SD1367
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2sb10012sd13672sb10022sd1368+162sb10032sb10042sb10052sb10072sb10082sb10092sb10132sb10142sb10742sb10602sb10472sb10992sb11002sb10392sb10402sb1041
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2SD1431
Abstract: 2SD1415 2SD1432 2-16D3A 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423
Contextual Info: - 248 - Ta-25T>, *E[l[äTc=25'C M S ?± 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423 2SD1423A & PSW/D Vq b q VcEQ (V) (V) 60 S Ic C D O Pc Pc* ICBO (A) (ff) (ff) (max) <//A) 60 7 2 VcB (V) S f (min) i U (max) 30 100 60 2000 15 0 0 0 f t ( T a = 2 5 tC )
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2sd14172sd14182sd14192sd1420+102sd14212sd14232sd1423a2sd1424ktsd14422sb9252sd14312sd14152sd14322-16d3a
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2SD556 sanken
Abstract: SDT9207 SM2176 2sd556 KT819G SDT9202 Bd184 SDT9803 KT818G 2N3055-7
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE Of) PD Max toN Max (A) (s) ICBO Max hFE »T ON) Min (Hz) r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . . 5 . . . .10 . . . .15
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bdw41bdw46bdt53sm2176+12sm2183bd909bd910sdt98032sd556 sankensdt92072sd556kt819gsdt9202bd184kt818g2n3055-7
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2SA1019
Abstract: 2sb641 2SA1115 IR 638 2SB175 2sb1041 2SA1115 F 2sb618a 2SB549 2SB641 r
Contextual Info: - 48 - w. tt s Typ e No. « M anuf. 8 2SB 605 - 2 SB 606 * ± a „ Z # SANYO 2SB764 Ä 2 TOSHIBA m b NEC 2SA505 B ÎL HITACH I 2SA673A ÎL B 2SB 612 a îl 2SB817 B 8 2SB775 2SB686 2SB775 2SB686 - a # a « a s 2SB776 2SB688 2SB688 2SB 619 fè T 2SB816 2SB 620
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2sb7642sa5052sa673a2sa684+162sa9352sa8792sb6492sb1086a2sb8172sb7752sa10192sb6412sa1115ir 6382sb1752sb10412sa1115 f2sb618a2sb5492sb641 r
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