2SA505 Search Results

Contextual Info: J , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2SA505 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown VoltageV(BR)CEo= -50V (Min.) • Collector-Emitter Saturation VoltagePIN 1. EMITTER

2SC495

Abstract: 2SA496 2SC496 2SA505 2SC495 transistor 2SA505-0 2sa505-y 2SA496-0 2SA496-Y 2SA505-R
Contextual Info: 496 2SA 505 A l -/V D y p N P x e ttz/P iifi& h jy y zv iP C T tt ^ S IL IC O N PNP EPITA XIA L TRANSISTOR P C T U n it 35$ PCT I j> -to Produced by Perfect Crystal Device Technology. 134 PROCESS) i n mm 2sa496 2sa505 ELECTRICAL CHARACTERISTICS (Ta = 25 t)

NEC 2561

Abstract: NEC 2581 nec 2565 2565 nec 2SC2564 2SC2320 NEC 2562 2581 NEC 2561 nec 2SC237
Contextual Info: - 3 . n SANYO m ±L H IT A C H I □ — h. tt 2SC 2552 ^ 3fC S 2SC3038 2SC2333 ¿5b¿Oi¿ 2SC2738 2SC3968 2SC 2 553 / & 2SC3039 2SC2335 2SC2613 2SC2739 2SC4205 2SC2749 2SC3365 2SC2841 € TO SH IBA 2SC 2 5 5 5 " - ' NEC 2SC 2556-.- tó T 2SA505 2SC2690 2SC 2557

2SA1019

Abstract: 2sb641 2SA1115 IR 638 2SB175 2sb1041 2SA1115 F 2sb618a 2SB549 2SB641 r
Contextual Info: - 48 - w. tt s Typ e No. « M anuf. 8 2SB 605 - 2 SB 606 * ± a „ Z # SANYO 2SB764 Ä 2 TOSHIBA m b NEC 2SA505 B ÎL HITACH I 2SA673A ÎL B 2SB 612 a îl 2SB817 B 8 2SB775 2SB686 2SB775 2SB686 - a # a « a s 2SB776 2SB688 2SB688 2SB 619 fè T 2SB816 2SB 620

2SA505

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA505 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -50V (Min.) ·Collector-Emitter Saturation VoltageVCE(sat)= -0.8V (Max.)@ IC= -500mA APPLICATIONS ·Designed for medium power amplifier applications.

2SC495

Abstract: 2sc496 2SA505 DO313
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA 5b D~| TDTTESD 56C <D I S C R E T E / O P T O 07219 □ 0 G 721 ci t 7 - ¿-9 - D 2SA496&#39; 2SA505i SILICON PNP EPITAXIAL TYPE PCT PROCESS) Unit in mm 7.9MAX. MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage

2SC495

Abstract: 2SC496 2SA505 2SA496 AC46C 2SA496-R 25X25X 2sa496 y
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TO S H IB A <D I S C R E T E / O P T O Th lT~§ T D ci7ESD 00072]!^ t. | 56C 072 19 D 7- ¿-7- 1 3 '2SA496&#39; 2SA505] SILICON PNP EPITAXIAL TYPE PCT PROCESS) Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: ' ' • Low Collector Saturation Voltage

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2SC495

Abstract: 2SC496 toshiba l40 2SA496 2SC495-2SC496 2SA505 AC46C 2sc4952 2sa49 2SC496 Y
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- ~5b D~”§ SOTTESO □□07MD7 7 .J '2SC495&#39; 2SC496, 9097250 TOSHIBA SILICON NPN EPITAXIAL TYPE PCT PROCESS (DI S CRE TE / O P T O ) 5òC 07 407 Ö 7"- 3 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 0 3 . 1 ± O .1 5 FEATURES :

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power