10N50A
Abstract: 10n50 ir 10n60 IXGP10N50
Contextual Info: 4686226 I X Y S CORP □3 D eT| 4b ñ b 2 5 b OODOEaS □ ¥ ~ T - 3 ^ - \ 3 IXGP10N50, 60 IXGM10N50, 60 i 1 0 AMPS, 5 0 0 - 6 0 0 VOLTS MAXIMUM RATINGS Parameter Sym. IXGP10N50 IXGM10N50 IXGP10N60 IXGM10N60 Unit Drain-Source Voltage 1 V o ss 500 600 Vdc
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ixgp10n50ixgm10n50ixgp10n60ixgm10n60+310n50a10n50ir 10n60
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12n60u
Abstract: sta 750 tic 263a
Contextual Info: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH
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12n60usta 750tic 263a |
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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axc-051axc-051-raxc-102axv-002+16015-14to12x45-16io12x60-08io12x60-12io12x60-14io12x60-16io1dse 130 -06avub 70-12ixgh 30n120vub 70-1630n60b80n1012n60cddsei 30-16 asdsep 15-06a13n50
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10N60
Abstract: 10n60e gcu 101
Contextual Info: DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
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ms5f6932fmp10n60eh04-004-05h04-004-03+310n6010n60egcu 101
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fma10n60e
Abstract: 10N60 10N60e FMA10N gcu 101 FMA10N60
Contextual Info: DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
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ms5f6931fma10n60eh04-004-05h04-004-03+510n6010n60efma10ngcu 101fma10n60
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10N60e
Abstract: POWER MOSFET P1 smd marking code ms5f6933 mosfet marking code AE on semiconductor marking code dpack Diode SMD SJ 04
Contextual Info: Device Name DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED : Type Name : DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
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fmi10n60efmc10n60ems5f6933h04-004-05+6h04-004-0310n60epower mosfet p1 smd marking codemosfet marking code aeon semiconductor marking code dpackdiode smd sj 04
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10N60e
Abstract: fuji D4701 4010-N gcu 101
Contextual Info: Device Name DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED : Type Name : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
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ms5f6933fmi10n60efmc10n60eh04-004-0used+5h04-004-0310n60efuji d47014010-ngcu 101
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2n70002n7000a2n7000k70max+1345max55max80max9n90c9n50cigbt 20n50kmb*050n60p7n65c5n50csmd diode s4 58a2n60c2n60 mosfet smpsstr tv smps
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IXGH20N60U1
Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Contextual Info: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package
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1750a30khzt-39-15ixgh10n60u1+11ixgh10n60au1ixgh20n60u1ixgh17n100au1sot227b packageixsh20n60u1gh20n60au11xysultrafast 5-40 khze1s4ti231igbt 20a 600v abb
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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o-220o-263o-24716n60+14b1-1024n6030n6040n6040n60 igbt35n120u1b1116equivalent for 30n6040n60 equivalent30n60 equivalent30n60 to-220ixsn 35n120u1igbt equivalent to 40n6080n60
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7an-6466cx 2859 smd74ac14 spice6120* harrishcf4018be7028 smd transistorspice irfbc40
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2
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