IXSH30N60C Search Results

n60c

Abstract: ci lm 317
Contextual Info: 0IXYS ADVANCEDTECHNICALINFORMATION High Speed IGBT with Diode IXSH30N60CD1 IXSK30N60CD1 IXST30 N60CD1 CES ^C25 VCE sat t fi Short Circuit SOA Capability 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings 600 V vCGR 600 V VGES vGEM

Contextual Info: DIXYS ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK30N60CD1 IXST 30 N60CD1 V CES I Short Circuit SOA Capability 600 V 55 A C25 V C E sat 2.5 V t fi 70 ns TO-247AD (IXSH) Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

IXSH30N60CD1

Abstract: IXSK30N60CD1 IXST30N60CD1
Contextual Info: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR

T0263

Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
Contextual Info: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V *C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247T*I(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES

diode u2 40

Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60
Contextual Info: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ *q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style * ► N eiV ISOPLUS247™ (R) Case style

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

n60c

Abstract: IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1 TO-264 Jedec package outline N60CD1
Contextual Info: ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 V CES I C25 V CE sat t fi Short Circuit SOA Capability = = = = 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

case style

Abstract: IXSH35N100A
Contextual Info: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES

Contextual Info: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR