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    IXSN80N60A Search Results

    IXSN80N60A Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXSN80N60A
    IXYS High Current IGBT Original PDF 72.35KB 2
    IXSN80N60AU1
    IXYS TRANS IGBT MODULE N-CH 600V 160A 4SOT-227B Original PDF 97.43KB 4
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    IXSN80N60A Price and Stock

    IXYS Corporation

    IXYS Corporation IXSN80N60AU1

    IGBT MOD 600V 160A 500W SOT-227B
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    IXSN80N60A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: High Current IGBT IXSN80N60A VCES = IC25 = VCE sat = 600 V 160 A 3V Short Circuit SOA Capability G Preliminary Data E E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V


    Original
    IXSN80N60A OT-227 PDF

    S8500

    Abstract: ixsn80N60A high current igbt ic902
    Contextual Info: High Current IGBT IXSN80N60A VCES = IC25 = VCE sat = 600 V 160 A 3V Short Circuit SOA Capability G Preliminary Data E E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V


    Original
    IXSN80N60A OT-227 S8500 ixsn80N60A high current igbt ic902 PDF

    T0263

    Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
    Contextual Info: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V *C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247T*I(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES


    OCR Scan
    T0-220 PLUS247TM O-268 IS0PLUS247T OT-227B T0263 O-247 IXSA16N60 IXSP16N60 IXSH24N60 T0-263 IXSH25N120A IXSH30N60C IXSH15N120B PDF

    Contextual Info: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient


    Original
    80N60AU1 OT-227 E153432 PDF

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


    OCR Scan
    O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel PDF

    80n60

    Abstract: IXSN80N60AU1
    Contextual Info: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30


    Original
    80N60AU1 OT-227 E153432 80n60 IXSN80N60AU1 PDF

    case style

    Abstract: IXSH35N100A
    Contextual Info: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES


    OCR Scan
    O-268AA O-264 OT-227B PLUS247TM ISOPLUS247TM IXSH24N60 IXSH45N100 IXSH45N120* IXSH45N120B IXST45N120B case style IXSH35N100A PDF