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SIA811ADJ Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIA811ADJ-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A PPAK SC70-6	Original	PDF		12

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Vishay Intertechnologies


Vishay Intertechnologies SIA811ADJ-T1-GE3 Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIA811ADJ-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.28	Get Quote
Avnet Americas	SIA811ADJ-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.15	Buy Now
Mouser Electronics	SIA811ADJ-T1-GE3		5,746			1 $0.87 10 $0.40 100 $0.35 1000 $0.27 10000 $0.18	Buy Now
TTI	SIA811ADJ-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
EBV Elektronik	SIA811ADJ-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIA811ADJ-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SIA811ADJ-GE3		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIA811ADJ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	sia811adj sc-70 sc-70-6electronic 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
SC-70-6 Abstract: SiA811ADJ-T1-GE3 Contextual Info: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	sia811adj sc-70 sc-70-6 11-mar-11 +1sia811adj-t1-ge3	PDF
Contextual Info: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	sia811adj sc-70 sc-70-6emarks 2011/65/eu +22002/95/ec 12-mar-12	PDF
68995 Abstract: 6852 8829 mosfet U 8047 8821 9114 AN609 Contextual Info: SiA811ADJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	sia811adj an609 02-oct-08 68995 +56852 8829 mosfet u 8047 8821 9114	PDF
part marking information vishay HD 1 Contextual Info: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	sia811adj sc-70 sc-70-6 2011/65/eu +32002/95/ec 12-mar-12 part marking information vishay hd 1	PDF
SiA811ADJ-T1-GE3 Abstract: SiA811DJ SiA811DJ-T1-GE3 SiA811ADJ Contextual Info: Specification Comparison Vishay Siliconix SiA811ADJ vs. SiA811DJ Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode PowerPAK SC-70 Identical Part Number Replacements: SiA811ADJ-T1-GE3 replaces SiA811DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	sia811adj sia811dj sc-70 sia811adj-t1-ge3 +3sia811dj-t1-ge3 curren31 02-dec-08	PDF
Contextual Info: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	sia811adj sc-70 sc-70-6 11-mar-11	PDF
SC-70-6 Abstract: SiA811ADJ-T1-GE3 S-82482-Rev Contextual Info: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	sia811adj sc-70 sc-70-6 18-jul-08 +2sia811adj-t1-ge3 s-82482-rev	PDF
SiA811ADJ Contextual Info: SPICE Device Model SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	sia811adj 18-jul-08	PDF
NX3008 Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N Contextual Info: Advanced cross reference list DFN* MOSFETs DFN: discrete flat no-leads in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1	Original	aon2240 aon2401 aon2405 aon2406 +14aon2407 aon2408 aon2409 aon2410 aon2420 aon2701 nx3008 irlhs6242 sia431dj ssm6j503nu irlhs2242 dmn3730ufb4 fdma1028nz fdma3028n	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	gp-20 fsq510 equivalent bta12 6008 bta16 6008 +7zigbee interface with avr atmega16 precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 a564 transistor bsm25gp120 b2	PDF
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:	Original	sc-70 sia519edj com/mosfets/powerpak-sc-70-package/vmn-pt0131-1402	PDF
SiA427DJ Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:	Original	sc-70 com/mosfets/powerpak-sc-70-package/vmn-pt0131-1209 sia427dj +6sia450dj sia447dj sia413dj sia413 sia445edj sia915dj	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF