SI3483 Search Results

Si3483CDV

Abstract: Si3483CDV-T1-E3
Contextual Info: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 11.5 nC RoHS COMPLIANT • Load Switch

Si3483DV-T1-E3

Abstract: Si3483DV Si3483DV-T1-GE3
Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 6.2 0.053 at VGS = - 4.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

tsop6 package

Contextual Info: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3483DV

Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4

SI3483CDV

Abstract: S8188
Contextual Info: SPICE Device Model Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3483DV

Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4

Si3483DV

Abstract: si3483dvt1e3
Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4

si3483dvt1e3

Abstract: Si3483DV Si3483DV-T1-E3 Si3483CDV Si3483CDV-T1-E3 Si3483CDV-T1-GE3
Contextual Info: Specification Comparison Vishay Siliconix Si3483CDV vs. Si3483DV Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3483CDV-T1-E3 or Si3483CDV-T1-GE3 replaces Si3483DV-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Contextual Info: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

72171

Abstract: Si3483DV
Contextual Info: SPICE Device Model Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI3483CDV

Abstract: Si3483CDV-T1-E3
Contextual Info: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 11.5 nC RoHS COMPLIANT • Load Switch

Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 6.2 0.053 at VGS = - 4.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 6.2 0.053 at VGS = - 4.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Si3483CDV-T1-GE3

Abstract: SI3483CDV Si3483CDV-T1-E3
Contextual Info: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

72171

Abstract: Si3483DV
Contextual Info: SPICE Device Model Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3483CDV-T1-GE3

Abstract: Si3483CDV Si3483CDV-T1-E3
Contextual Info: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SPICE Device Model Si3483CDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

AN609

Abstract: Si3483DV
Contextual Info: Si3483DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3483DV

Contextual Info: SPICE Device Model Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 6.2 0.053 at VGS = - 4.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3483DV

Contextual Info: Si3483DV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = -10 V -6.2 0.053 @ VGS = -4.5 V - 5.0 APPLICATIONS D Load Switch -30 TSOP-6 Top View 1 (4) S 6 (3) G

Contextual Info: LM3424 www.ti.com SNVS603B – AUGUST 2009 – REVISED OCTOBER 2009 LM3424 Constant Current N-Channel Controller with Thermal Foldback for Driving LEDs Check for Samples: LM3424 FEATURES DESCRIPTION • The LM3424 is a versatile high voltage N-channel MosFET controller for LED drivers . It can be easily