SI4174DY Search Results
SI4174DY Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4174DY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 17A 8-SOIC | Original | 10 |
SI4174DY Price and Stock
Vishay Intertechnologies SI4174DY-T1-GE3Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; 3.2W; SO8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4174DY-T1-GE3 | 140 | 1 |
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SI4174DY-T1-GE3 | 15,000 | 2,500 |
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| SI4174DY-T1-GE3 | 5,000 | 2,500 |
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| SI4174DY-T1-GE3 | 140 | 93 |
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SI4174DY-T1-GE3 | Tape & Reel | 2,500 | 8 Weeks | 2,500 |
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SI4174DY-T1-GE3 | 8,248 |
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SI4174DY-T1-GE3 | 15,000 | 8 Weeks | 2,500 |
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| SI4174DY-T1-GE3 | 5,000 | 8 Weeks | 2,500 |
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SI4174DY-T1-GE3 | Bulk | 3,486 | 1 |
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| SI4174DY-T1-GE3 | Cut Tape | 2,500 | 2,500 |
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SI4174DY-T1-GE3 | Reel | 2,500 |
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SI4174DY-T1-GE3 | 10,000 | 1 |
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SI4174DY-T1-GE3 | 8,000 |
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| SI4174DY-T1-GE3 | 8,000 |
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SI4174DY-T1-GE3 | 10 Weeks | 2,500 |
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SI4174DY-T1-GE3 | 15 Weeks | 2,500 |
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Vishay Intertechnologies SI4174DYT1GE3N-CHANNEL 30-V (D-S) MOSFET Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4174DYT1GE3 | 2,500 |
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Get Quote | |||||||
Vishay Huntington SI4174DY-T1-GE3MOSFET N-CH 30V 17A 8-SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4174DY-T1-GE3 | 30,000 |
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SI4174DY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SI4174DY-T1-GE3
Abstract: si4174dy A1827
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si4174dysi4174dy-t1-ge318-jul-08a1827 | |
si4174Contextual Info: New Product Si4174DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 17 0.013 at VGS = 4.5 V 14.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
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si4174dysi4174dy-t1-ge32011/65/eu2002/95/ec+2 | |
Si4174DY
Abstract: Si4174DY-T1-GE3 marking 96B si4174
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si4174dysi4174dy-t1-ge311-mar-11marking 96b+1 | |
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Contextual Info: SPICE Device Model Si4174DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si4174dy2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: New Product Si4174DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 17 0.013 at VGS = 4.5 V 14.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
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si4174dysi4174dy-t1-ge32002/95/ec2011/65/eu+2 | |
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Contextual Info: New Product Si4174DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 17 0.013 at VGS = 4.5 V 14.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
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si4174dysi4174dy-t1-ge311-mar-11 | |
si4174dyContextual Info: SPICE Device Model Si4174DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4174dy18-jul-08 | |
2260 vishay
Abstract: AN609 Si4174DY 69034
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si4174dyan60927-oct-082260 vishay+1 | |
MIC2169A
Abstract: si4174dy IRF7821 MSOP-10 SD103BWS Si4800
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mic2169b500khzmsop-10m9999-041210-b+5 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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gp-20fsq510 equivalentbta12 6008bta16 6008+7 | |
06033D105MAT2A
Abstract: GMR188R71H104KA93D CRCW12061001FRT1 GRM31MR71H105KA01 MIC4224 GMR188R7 GMR188R71H MIC4225 MOSFET 8PIN ic driver mosfet 8 pin
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mic4223/4/5mic4223/mic4224/mic4225mic4224ymmic4224ymme+12 | |
irf3717
Abstract: FDV0630-1R0
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ltc3872550khzot-23ltc3704+8 | |
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Contextual Info: LTC3872-1 No RSENSE Current Mode Boost DC/DC Controller Features Description No Current Sense Resistor Required n V OUT up to 60V n Constant Frequency 550kHz Operation n Internal Soft-Start and Optional External Soft-Start n Adjustable Current Limit n Pulse Skipping at Light Load |
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ltc3872-1550khzot-23ltc1871/ltc1871-1/+6 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8 | |
mic4225
Abstract: mic422 MIC4224 GRM31MR71H105KA01 mosfet schematic solenoid driver si4174dy 8pin dual gate driver Motor Driver Circuit schematic 20 ampere MIC4223YM vishay 2.2nf 2kv
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mic4223/mic4224/mic42252000pfm9999-061109-amic4225+9 | |
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Contextual Info: LT3797 Triple Output LED Driver Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n Three Independent LED Driver Channels Wide Input Voltage Range: 2.5V to 40V VIN Transient Ride-Through Up to 60V Rail-to-Rail LED Current Sense: 0V to 100V 3000:1 PWM Dimming |
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lt3797100khz52-lea40vmax+6 | |