SOT923 Search Results

Contextual Info: Package outline HVQFN64: plastic thermal enhanced very thin quad flat package; no leads; 64 terminals; body 9 x 9 x 0.85 mm B D SOT923-1 A terminal 1 index area E A A1 c detail X e1 L e 1/2 e 17 v w b 32 M M C C A B C y1 C y 33 16 e e2 Eh 1/2 e 1 terminal 1

Contextual Info: Package outline HVQFN64: plastic thermal enhanced very thin quad flat package; no leads; 64 terminals; body 9 x 9 x 0.85 mm B D SOT923-2 A terminal 1 index area E A A1 c detail X e1 1/2 e L e 17 b v w 32 16 C C A B C M M y y1 C 33 e e2 En Em Ek Ej Eh 1/2 e

10a 400V ultra fast diode d2pak

Abstract: schottky diode 60V 80A diode schottky 600 volt smb diode trr 100ns sod-123 diode schottky 1000V 10a CMSH3-40 sod-123 trr 75ns cbrhdsh1-40l CMR3U-06 SOT923
Contextual Info: Rectifiers • General Purpose Rectifiers • Fast Recovery Rectifiers • Ultra Fast Recovery Rectifiers • Super Fast Recovery Rectifiers • Schottky Rectifiers • Bridge Rectifiers General Purpose Rectifiers 1.0 to 3.0 Amperes 200 to 1000 Volts IO AMPS

sot923

Abstract: sot-923 weight SOT-923
Contextual Info: Package Details - SOT-923 Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: Single Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (9-January 2008)

marking code R

Abstract: MARKING CODE W
Contextual Info: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

8002A

Abstract: 7002A Small Signal MOSFETs CMXDM7002A mosfet SOD 23 "Small Signal MOSFETs" 7120 CEDM7001 CMLDM7002AJ TLM532
Contextual Info: Small Signal MOSFETs Selection Guide Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOT-963 SOD-523 SOD-323 SOT-323 SOT-363 SOD-123 SOT-143 SOT-26 SOT-28 SMB SMC SOIC-16 TLM Tiny Leadless Module SOT-523 SOT-563 SOD-123F SOT-23 SOT-23F SOT-89

X10-4

Contextual Info: CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS SOT-923 CASE FEATURES • Very Small Package Size • 200mA Collector Current • Low VCE SAT (0.1V Typ @ 50mA) • Miniature 0.8 x 0.6 x 0.4mm Ultra Low height profile

Contextual Info: PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SOT-923 0.3 0.75 0.3 0.27 0.75 0.4 0.27 1.35 Recommended Minimum Pads Dimensions in mm Document Number: 65542 Revision: 09-Oct-09 www.vishay.com 1

sot883

Abstract: CET3904E CET3906E
Contextual Info: News Release Released – November 19, 2008 145 Adams Avenue Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 Contact: Tom Donofrio Email: tdonofrio@centralsemi.com www.centralsemi.com For Immediate Release Central Semiconductor’s Low VCE(SAT) Transistors

NT353

Abstract: NT354
Contextual Info: NT354 Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

NT358

Abstract: AN2222 NT357
Contextual Info: NT358 Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: MMBT3906SL PNP Epitaxial Silicon Transistor Features • • • • • • General purpose amplifier transistor Ultra small surface mount package for all types max 0.43mm tall Suitable for general switching & amplification Well suited for portable application

CMNT3906E

Contextual Info: ¡ei S e m ic o n d u c to r C o rp . S i V C E S A T H f t W 60V, 200mA TLP Tiny Laadlass Package fEMTOminr CET3904E (NPN) CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) SOT-883L SOT-923 TEÌSL0B 1.05mm x 0.65mm x 0.4mm ( g / t ) 1.1 mm x 0.65mm x 0.41 mm

SOT-923

Abstract: SOT923 CET3906E SOT-883L SOT883L 3904 sot-923
Contextual Info: 发布 微型低 VCE SAT 晶体管 顶视图 如有需要 可提供样品 底视图 1.05mm x 0.65mm x 0.4mm (高度) 1.1mm x 0.65mm x 0.41mm (高度) 特点 增强电气性能，包括在 10mA 下最大 VCE(SAT) 值仅为 0.1V SOT-883L 和 SOT-923 封装

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: NT331 Semiconductor NPN silicon transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =0.15V(Max.) Typ. • Extremely small size package: 0.8x0.6x0.4 • Complementary pair with NT332 Ordering Information

Contextual Info: MMBT3904SL C NPN Epitaxial Silicon Transistor Features • General purpose amplifier transistor. • Ultra small surface mount packagefor all types max 0.43mm tall • Suitable for general switching & amplification • Well suited for portable application

12v dc full wave bridge rectifier

Abstract: Schottky Diode 40V 5A bridge SCR 12V battery charging Schottky Diode 40V 5A dual Schottky Diode 40V 5A Schottky Bridge 20V 2A bridge rectifier 100A 100V Dual N-Channel MOSFET dip package DIODE RECTIFIER BRIDGE SINGLE 200A P-Channel mosfet 400v
Contextual Info: Dual, Schottky Diodes CMRD6263DO 70V, 15mA Dual, Schottky Diodes Features: Benefits: Applications: SOT-963 Actual Size in mm 1.05 x 1.05 x 0.5 • Dual, isolated, 70V, 15mA Schottky diodes • Low reverse current 98nA @ 50V • High total energy efficiency

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

Contextual Info: Outline Drawing SOT-923 .043 1.10 .035(0.90) .033(0.85) .030(0.75) .026(0.65) .022(0.55) .014(0.35) .011(0.27) .007(0.17) .009(0.22) .004(0.10) .017(0.43) .014(0.35) .002(0.05) .000(0.00) .006(0.15) Dimensions in inches and (millimeters) Rev.A

SOD-923 zener

Abstract: 8002A Package Details SOT-28 NPN PNP sot-563 scr SOT-23 VF 0.1v CMXDM7002A Schottky Diode SOT-89 laptop battery pinout CMKTC825A
Contextual Info: ’ new what’s what’s new keep up to date with the latest devices from CentralTM.visit our website at: www.centralsemi.com/product/whatsnew Tiny Low VCE SAT Transistors 60V, 200mA cEt3904E (NPN) cEt3906E (PNP) features SOt-923 SOt-883L Top View • Enhanced Specification including an improved maximum VCE(SAT) of 0.1V @ 10mA

m 923

Abstract: laptop ic list CMNT3906E SOT923 sot-883 3904 SOT CET3904 3904 sot-923 marking 02 npn
Contextual Info: PRODUCT announcement Tiny Low VCE SAT Transistors 60V, 200mA CET3904E (NPN) CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) Top View Sample Devices soT-923 soT-883l available Bottom View 1.05mm x 0.65mm x 0.4mm(H) 1.1mm x 0.65mm x 0.41mm(H) upon request. features

NT331

Abstract: NT332
Contextual Info: NT332 PNP Silicon Transistor PIN Connection Description • General small signal amplifier Features 3 • Low collector saturation voltage : VCE sat =-0.15V(Max.) • Extremely small size package: 0.8x0.6x0.4 ㎜ Typ. • Complementary pair with NT331 1 2

transistor t09

Contextual Info: Tape Information Vishay Siliconix SOT-923 CARRIER TAPE 2 mm PITCH 4.0 ± 0.1 B 1.75 ± 0.1 2.0 ± 0.05 3.5 ± 0.05 1.12 ± 0.05 0.229 ± 0.02 05 5° ma x A Ø 0. 5 ± . 0. A 8.0 ± 0.1 4.0 ± 0.1 Ø 1.50 ± 0.1 0.48 ± 0.05 2.0 ± 0.05 B SECTION B-B 5° m