SOT883 Search Results
SOT883 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SOT883 |   | leadless ultra small plastic package; 3 solder lands | Original | 213.87KB | 1 | ||
| SOT883 |   | Footprint for reflow soldering SOT883 | Original | 205.52KB | 1 | ||
| SOT883_315 |   | Tape reel SMD; standard product orientation 12NC ending 315 | Original | 178.88KB | 2 | ||
| SOT883B |   | Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm | Original | 313.68KB | 1 | ||
| SOT883C |   | Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.34 mm | Original | 320.53KB | 1 | 
SOT883 Price and Stock
| Nexperia 2PC4617QM,315Bipolar Transistors - BJT SOT883 50V .1A NPN GP TRANS | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | 2PC4617QM,315 | Reel | 960,000 | 10,000 | 
 | Buy Now | |||||
| Nexperia 2PA1774QM,315Bipolar Transistors - BJT SOT883 40V .1A PNP BJT | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | 2PA1774QM,315 | Reel | 770,000 | 10,000 | 
 | Buy Now | |||||
| Nexperia PMZ390UN,315MOSFETs SOT883 N-CH 30V 1.78A | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | PMZ390UN,315 | Reel | 90,000 | 10,000 | 
 | Buy Now | |||||
| Toshiba America Electronic Components SSM3K35CTC,L3FMOSFETs SOT883 N-CH 20V .25A | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | SSM3K35CTC,L3F | Reel | 10,000 | 10,000 | 
 | Buy Now | |||||
| Toshiba America Electronic Components SSM3K72KCT,L3FMOSFETs SOT883 N-CH 60V .4A | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | SSM3K72KCT,L3F | Reel | 10,000 | 10,000 | 
 | Buy Now | |||||
SOT883 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Contextual Info: SO T8 83 B PESD5V0X2UAMB Ultra low capacitance unidirectional double ESD protection diode 10 April 2014 Product data sheet 1. General description Ultra low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD) | Original | DFN1006B-3 OT883B) IEC61000-4-2 AEC-Q101 | |
| Contextual Info: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench | Original | PMZB950UPE DFN1006B-3 OT883B) | |
| Contextual Info: 83B PDTA115TMB SO T8 PNP resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. | Original | PDTA115TMB DFN1006B-3 OT883B) PDTC115TMB. AEC-Q101 | |
| BISS 0001Contextual Info: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. | Original | PBSS2515MB OT883B PBSS3515MB. AEC-Q101 BISS 0001 | |
| PDTA123YMB
Abstract: PDTC123YMB 
 | Original | PDTC123YMB DFN1006B-3 OT883B) PDTA123YMB. AEC-Q101 PDTA123YMB PDTC123YMB | |
| PDTC123JMBContextual Info: 83B PDTA123JMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 47 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. | Original | PDTA123JMB DFN1006B-3 OT883B) PDTC123JMB. AEC-Q101 PDTC123JMB | |
| PDTA123YMB
Abstract: PDTC123YMB 
 | Original | PDTA123YMB DFN1006B-3 OT883B) PDTC123YMB AEC-Q101 PDTA123YMB PDTC123YMB | |
| PDTA143Z
Abstract: PDTA143ZMB PDTC143ZMB PDTA143 
 | Original | PDTA143ZMB DFN1006B-3 OT883B) PDTC143ZMB. AEC-Q101 PDTA143Z PDTA143ZMB PDTC143ZMB PDTA143 | |
| Contextual Info: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. | Original | PDTA143TMB DFN1006B-3 OT883B) PDTC143TMB. AEC-Q101 | |
| PDTC144WMBContextual Info: 83B PDTA144WMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 22 k Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. | Original | PDTA144WMB DFN1006B-3 OT883B) PDTC144WMB. AEC-Q101 PDTC144WMB | |
| PDTC143XMB
Abstract: PDTA143 PDTA143X 
 | Original | PDTA143XMB OT883B PDTC143XMB. AEC-Q101 PDTC143XMB PDTA143 PDTA143X | |
| SOT883
Abstract: sot-883 SC-101 JEDEC SC-101 EB11 SC101 
 | Original | OT883 SC-101 SOT883 sot-883 SC-101 JEDEC SC-101 EB11 SC101 | |
| Contextual Info: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. | Original | PDTC123EMB DFN1006B-3 OT883B) PDTA123EMB. AEC-Q101 | |
| NXP SMD ic MARKING CODE
Abstract: smd code marking ft sot23 marking 41 sot23 nxp 
 | Original | 2PA1774xMB DFN1006B-3 OT883B) 2PA1774QMB 2PA1774RMB 2PA1774SMB OT883B 2PC4617QMB NXP SMD ic MARKING CODE smd code marking ft sot23 marking 41 sot23 nxp | |
|  | |||
| TRANSISTOR SMD MARKING CODE 57
Abstract: PDTC114YMB PDTA114YMB 
 | Original | PDTC114YMB DFN1006B-3 OT883B) PDTA114YMB. AEC-Q101 TRANSISTOR SMD MARKING CODE 57 PDTC114YMB PDTA114YMB | |
| SMD TRANSISTOR MARKING 2X
Abstract: PDTA143 
 | Original | PDTC143TMB DFN1006B-3 OT883B) PDTA143TMB. AEC-Q101 SMD TRANSISTOR MARKING 2X PDTA143 | |
| transistor smd code marking 102
Abstract: TRANSISTOR SMD 2X K 
 | Original | PDTC124TMB DFN1006B-3 OT883B) PDTA124TMB. AEC-Q101 transistor smd code marking 102 TRANSISTOR SMD 2X K | |
| Contextual Info: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench | Original | 2N7002BKMB DFN1006B-3 OT883B) | |
| PDTA144
Abstract: nxp MARKING CC PDTC144V 
 | Original | PDTA144VMB DFN1006B-3 OT883B) PDTC144VMB. AEC-Q101 PDTA144 nxp MARKING CC PDTC144V | |
| Contextual Info: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package. | Original | PMBT3906MB DFN1006B-3 OT883B) PMBT3904MB. AEC-Q101 | |
| PDTC143XMBContextual Info: 83B PDTA143XMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. | Original | PDTA143XMB OT883B PDTC143XMB. AEC-Q101 PDTC143XMB | |
| transistor smd code marking 101Contextual Info: 83B PDTC115EMB SO T8 NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. | Original | PDTC115EMB DFN1006B-3 OT883B) PDTA115EMB. AEC-Q101 transistor smd code marking 101 | |
| PDTC124
Abstract: PDTC124XMB 
 | Original | PDTA124XMB DFN1006B-3 OT883B) PDTC124XMB. AEC-Q101 PDTC124 PDTC124XMB | |
| 03AF6Contextual Info: PMZB790SN 60 V, single N-channel Trench MOSFET 14 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench | Original | PMZB790SN DFN1006B-3 OT883B) 03AF6 | |