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PBSS2515MB Datasheets (2)

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NXP Semiconductors

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PBSS2515MB		NXP Semiconductors	15 V, 0.5 A NPN low VCEsat (BISS) transistor	Original	PDF	462.58KB	12
PBSS2515MB,315		NXP Semiconductors	PBSS2515MB - 15 V, 0.5 A NPN low VCEsat (BISS) transistor, SOT883B Package, Standard Marking, Reel Pack, SMD, Pitch 2mm	Original	PDF	462.58KB	12

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Nexperia PBSS2515MB-315 TRANS NPN 15V 0.5A DFN1006B-3
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DigiKey ()	PBSS2515MB-315	Tape & Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	PBSS2515MB-315	Cut Tape			1	1 $0.25 10 $0.25 100 $0.25 1000 $0.25 10000 $0.25	Buy Now
NXP Semiconductors PBSS2515MB,315 Trans GP BJT NPN 15V 0.5A 590mW 3-Pin DFN-B T/R Automotive AEC-Q101
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Bristol Electronics	PBSS2515MB,315		6,030		1	1 $0.38 10 $0.38 100 $0.19 1000 $0.07 10000 $0.06	Buy Now
Quest Components	PBSS2515MB,315		4,824			1 $0.50 10 $0.50 100 $0.50 1000 $0.10 10000 $0.07	Buy Now
Nexperia PBSS2515MB Small Signal Bipolar Transistor
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Vyrian	PBSS2515MB		5,746			1 - 10 - 100 - 1000 - 10000 -	Get Quote

PBSS2515MB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BISS 0001 Contextual Info: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.	Original	PBSS2515MB OT883B PBSS3515MB. AEC-Q101 BISS 0001	PDF
biss 0001 Contextual Info: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.	Original	PBSS2515MB OT883B PBSS3515MB. AEC-Q101 biss 0001	PDF
circuit diagram wireless spy camera Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint	Original	DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143	PDF
MARKING CODE SMD IC Abstract: biss 0001 BATTERY CHARGER cutoff Contextual Info: 83B PBSS3515MB SO T8 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.	Original	PBSS3515MB OT883B PBSS2515MB. AEC-Q101 MARKING CODE SMD IC biss 0001 BATTERY CHARGER cutoff	PDF
TL431 SOT323 Contextual Info: AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Rev. 3 — 28 February 2013 Application note Document information Info Content Keywords Breakthrough In Small Signal BISS transistor, low VCEsat, load switch,	Original	AN11045 TL431 SOT323	PDF
Contextual Info: 83B PBSS3515MB SO T8 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.	Original	PBSS3515MB OT883B PBSS2515MB. AEC-Q101	PDF