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    PDTC115EMB Search Results

    PDTC115EMB Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PDTC115EMB
    		NXP Semiconductors NPN resistor-equipped transistor; R1 = 100 kOhm, R2 = 100 kOhm Original PDF 715.65KB 11
    PDTC115EMB315
    		Nexperia NOW NEXPERIA PDTC115EMB - SMALL Original PDF 973.04KB
    PDTC115EMB,315
    		NXP Semiconductors PDTC115EMB - PDTC115EMB - NPN resistor-equipped transistor; R1 = 100 kOhm, R2 = 100 kOhm Original PDF 715.64KB 11
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    PDTC115EMB Price and Stock

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    NXP Semiconductors PDTC115EMB,315

    Trans Digital BJT NPN 50V 20mA 250mW Automotive 3-Pin DFN-B T/R
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    Verical () PDTC115EMB,315 180,000 5,301
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    PDTC115EMB,315 9,658 5,301
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    Rochester Electronics PDTC115EMB,315 189,658 1
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    • 100 $0.07
    • 1000 $0.06
    • 10000 $0.05
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    Nexperia PDTC115EMB,315

    Trans Digital BJT NPN 50V 0.02A 250mW 3-Pin DFN-B T/R Automotive AEC-Q101
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical PDTC115EMB,315 79,890 5,301
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    Avnet Americas PDTC115EMB,315 Tape & Reel 53 Weeks, 1 Days 30,000
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    Mouser Electronics PDTC115EMB,315 5,892
    • 1 $0.34
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    • 1000 $0.07
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    Rochester Electronics PDTC115EMB,315 79,890 1
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    Avnet Silica PDTC115EMB,315 32 Weeks 10,000
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    Nexperia PDTC115EMB

    Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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    Vyrian PDTC115EMB 10,267
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    PDTC115EMB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor smd code marking 101

    Contextual Info: 83B PDTC115EMB SO T8 NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		pdtc115embdfn1006b-3ot883bpdta115emb+2aec-q101transistor smd code marking 101 PDF

    Contextual Info: 83B PDTC115EMB SO T8 NPN resistor-equipped transistor; R1 = 100 k , R2 = 100 k Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		pdtc115embdfn1006b-3ot883bpdta115emb+1aec-q101 PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		dfn1006d-2od882ddfn1010d-3ot1215+16dfn2020md-6ot1220dfn1608d-2od1608dsn0603od962circuit diagram wireless spy camerapdtb123yip4303cx4dual cc baw623267 tsop6pcmf2dfn1bst60pumd4pdtb123epdta143 PDF

    transistor smd code marking 101

    Contextual Info: 83B PDTA115EMB SO T8 PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		pdta115embdfn1006b-3ot883bpdtc115emb+2aec-q101transistor smd code marking 101 PDF

    Contextual Info: 83B PDTA115EMB SO T8 PNP resistor-equipped transistor; R1 = 100 k , R2 = 100 k Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		pdta115embdfn1006b-3ot883bpdtc115emb+1aec-q101 PDF