SOT883L Search Results

10a 400V ultra fast diode d2pak

Abstract: schottky diode 60V 80A diode schottky 600 volt smb diode trr 100ns sod-123 diode schottky 1000V 10a CMSH3-40 sod-123 trr 75ns cbrhdsh1-40l CMR3U-06 SOT923
Contextual Info: Rectifiers • General Purpose Rectifiers • Fast Recovery Rectifiers • Ultra Fast Recovery Rectifiers • Super Fast Recovery Rectifiers • Schottky Rectifiers • Bridge Rectifiers General Purpose Rectifiers 1.0 to 3.0 Amperes 200 to 1000 Volts IO AMPS

Contextual Info: Package Details - SOT-883L Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: Single Character Alpha/Numeric Code. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m

8002A

Abstract: 7002A Small Signal MOSFETs CMXDM7002A mosfet SOD 23 "Small Signal MOSFETs" 7120 CEDM7001 CMLDM7002AJ TLM532
Contextual Info: Small Signal MOSFETs Selection Guide Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOT-963 SOD-523 SOD-323 SOT-323 SOT-363 SOD-123 SOT-143 SOT-26 SOT-28 SMB SMC SOIC-16 TLM Tiny Leadless Module SOT-523 SOT-563 SOD-123F SOT-23 SOT-23F SOT-89

CEDM7001

Abstract: CEDM8001 sot top marking codes
Contextual Info: Product Brief CEDM7001 N-Channel CEDM8001 (P-Channel) SOT-883L 20V, 100mA, MOSFETs in the ultra miniature SOT-883L package Top View Bottom View Typical Electrical Characteristics The Central Semiconductor CEDM7001 (N-Channel) and complementary CEDM8001 (P-Channel) are single 20V, 100mA

sot883

Abstract: CET3904E CET3906E
Contextual Info: News Release Released – November 19, 2008 145 Adams Avenue Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 Contact: Tom Donofrio Email: tdonofrio@centralsemi.com www.centralsemi.com For Immediate Release Central Semiconductor’s Low VCE(SAT) Transistors

Contextual Info: CEDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver

CMNT3906E

Contextual Info: ¡ei S e m ic o n d u c to r C o rp . S i V C E S A T H f t W 60V, 200mA TLP Tiny Laadlass Package fEMTOminr CET3904E (NPN) CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) SOT-883L SOT-923 TEÌSL0B 1.05mm x 0.65mm x 0.4mm ( g / t ) 1.1 mm x 0.65mm x 0.41 mm

CEDM7004

Abstract: n-channel mosfet transistor MOSFET 2KV
Contextual Info: CEDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and

Contextual Info: CEDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver

CEDM7004

Contextual Info: CEDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver

CEDM8001VL

Contextual Info: CEDM8001VL SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001VL is a P-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed

PB CEDM7001VL 8001VL

Abstract: CEDM7001VL 8001VL
Contextual Info: Product Brief CEDM7001VL N-Channel CEDM8001VL (P-Channel) SOT-883VL 20V, 100mA, MOSFETs in the very low profile SOT-883VL package Top View Bottom View Typical Electrical Characteristics Central Semiconductor’s CEDM7001VL (N-Channel) and CEDM8001VL (P-Channel) are Enhancement-mode MOSFETs

SOT-923

Abstract: SOT923 CET3906E SOT-883L SOT883L 3904 sot-923
Contextual Info: 发布 微型低 VCE SAT 晶体管 顶视图 如有需要 可提供样品 底视图 1.05mm x 0.65mm x 0.4mm (高度) 1.1mm x 0.65mm x 0.41mm (高度) 特点 增强电气性能，包括在 10mA 下最大 VCE(SAT) 值仅为 0.1V SOT-883L 和 SOT-923 封装

8002A

Abstract: 086a 7002A
Contextual Info: 发布 小信号增强模式场效应管 美国中央半导体生产 N-通道和 P-通道小信号增强模式场效应管，此系列 产品采用最流行的超小贴片封装，专为高速脉冲放大器和驱动器应用而设 计，适用于广泛终端产品包括：手机智能手机、PDA、MP3 播放器、

Contextual Info: CEDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and

Contextual Info: CEDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and

MOSFET 2KV

Contextual Info: CEDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8004 is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This

CET3906E TR

Abstract: X10-4 CET3904
Contextual Info: Central CET3904E NPN CET3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CET3904E / CET3906E Low VCE SAT NPN and PNP Transistors, respectively, are designed for applications where ultra

CEDM7001

Abstract: mosfet low vgs mosfet vgs 5v
Contextual Info: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for

n-channel mosfet transistor low power

Abstract: CEDM7001
Contextual Info: Central CEDM7001E TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for

12v dc full wave bridge rectifier

Abstract: Schottky Diode 40V 5A bridge SCR 12V battery charging Schottky Diode 40V 5A dual Schottky Diode 40V 5A Schottky Bridge 20V 2A bridge rectifier 100A 100V Dual N-Channel MOSFET dip package DIODE RECTIFIER BRIDGE SINGLE 200A P-Channel mosfet 400v
Contextual Info: Dual, Schottky Diodes CMRD6263DO 70V, 15mA Dual, Schottky Diodes Features: Benefits: Applications: SOT-963 Actual Size in mm 1.05 x 1.05 x 0.5 • Dual, isolated, 70V, 15mA Schottky diodes • Low reverse current 98nA @ 50V • High total energy efficiency

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

SOD-923 zener

Abstract: 8002A Package Details SOT-28 NPN PNP sot-563 scr SOT-23 VF 0.1v CMXDM7002A Schottky Diode SOT-89 laptop battery pinout CMKTC825A
Contextual Info: ’ new what’s what’s new keep up to date with the latest devices from CentralTM.visit our website at: www.centralsemi.com/product/whatsnew Tiny Low VCE SAT Transistors 60V, 200mA cEt3904E (NPN) cEt3906E (PNP) features SOt-923 SOt-883L Top View • Enhanced Specification including an improved maximum VCE(SAT) of 0.1V @ 10mA

m 923

Abstract: laptop ic list CMNT3906E SOT923 sot-883 3904 SOT CET3904 3904 sot-923 marking 02 npn
Contextual Info: PRODUCT announcement Tiny Low VCE SAT Transistors 60V, 200mA CET3904E (NPN) CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) Top View Sample Devices soT-923 soT-883l available Bottom View 1.05mm x 0.65mm x 0.4mm(H) 1.1mm x 0.65mm x 0.41mm(H) upon request. features