430MA Search Results
430MA Price and Stock
Littelfuse Inc V430MA3AVaristor: metal-oxide; THT; 253VAC; 349VDC; 430V; 100A; -55÷85°C |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
V430MA3A | 1,500 |
|
Get Quote | |||||||
|
V430MA3A | 1,916 |
|
Buy Now | |||||||
|
V430MA3A | Bulk | 1,500 |
|
Buy Now | ||||||
Littelfuse Inc V430MA7BVaristor: metal-oxide; THT; 264VAC; 365VDC; 430V; 100A; Ø: 3mm; Ø3mm |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
V430MA7B | 1,500 |
|
Get Quote | |||||||
|
V430MA7B | 1,505 |
|
Buy Now | |||||||
|
V430MA7B | Bulk | 1,500 | 1 |
|
Buy Now | |||||
| V430MA7B | Bulk | 1,430 | 1 |
|
Buy Now | ||||||
|
V430MA7B | Bulk | 1,500 |
|
Get Quote | ||||||
|
V430MA7B | Bulk | 2,600 | 100 |
|
Buy Now | |||||
|
V430MA7B | 3,260 |
|
Get Quote | |||||||
|
V430MA7B | 20 |
|
Get Quote | |||||||
Kyocera AVX Components 1206SA430MAT2AR102 HIGH VOLT - Tape and Reel (Alt: 1206SA430MAT2A) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
1206SA430MAT2A | Tape & Reel | 2,000 |
|
Get Quote | ||||||
Texas Instruments LMQ66430MA5RXBRQ1Switching Voltage Regulators Automotive 36-V 3-A low EMI synchronous |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
LMQ66430MA5RXBRQ1 | 2,909 |
|
Buy Now | |||||||
Texas Instruments LMQ66430MA3RXBRQ1Switching Voltage Regulators Automotive 36-V 3-A low EMI synchronous |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
LMQ66430MA3RXBRQ1 |
|
Get Quote | ||||||||
430MA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: LT1946 1.2MHz Boost DC/DC Converter with 1.5A Switch and Soft-Start FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1946 is a fixed frequency step-up DC/DC converter containing an internal 1.5A, 36V switch. Capable of generating 8V at 430mA from a 3.3V input, the LT1946 is ideal |
Original |
lt1946430ma300malt1944/lt1944-1+4 | |
ERJ3EKF0R00V
Abstract: SC792 BZV55C6V2 PMBT4401
|
Original |
crd1680-7wcs1680430ma12vac/vdc+7 | |
|
Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series AQ1055N1S-T Features Item Summary 5.1nH(-0.3nH to +0.3nH), 430mA, 8, 0402 Lifecycle Stage Mass Production Standard packaging quantity (minimum) |
Original |
aq1055n1s-t430ma10000pcs100mhz+3 | |
|
Contextual Info: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance |
Original |
dmn62d0sfd430ma540maaec-q101+1 | |
|
Contextual Info: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA N EW PRODU CT V(BR)DSS • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance |
Original |
dmn62d0sfd540ma430maaec-q101+1 | |
|
Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) max • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
dmp2004k-430ma-150mads30933 | |
|
Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04021N1B-E Features Item Summary 1.1nH(-0.1nH to +0.1nH), 430mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum) |
Original |
hkq04021n1b-e430ma40000pcs500mhz+1 | |
|
Contextual Info: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance |
Original |
dmn62d0sfd430ma540maaec-q101+1 | |
|
Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LEM2520TR22K Features Item Summary 0.22 H(±10%), 430mA, 1008 Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table |
Original |
lem2520tr22k430ma2000pcs450mhz+1 | |
LTUG
Abstract: mse8 CDRH5D18-4R1 CDRH5D28-5R3 LT1946 LT1946EMS8 LT1946EMS8E RLF5018T-4R7M1R4 UPS120
|
Original |
lt1946430ma300malt1944/lt1944-1+12 | |
DMP2004K-7Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • ID RDS(on) max TA = 25°C 0.9Ω @ VGS = -4.5V -430mA 2.0Ω @ VGS = -1.8V -150mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
dmp2004k-430ma-150maaec-q101+3 | |
|
Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04021N2B-T Features Item Summary 1.2nH(-0.1nH to +0.1nH), 430mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum) |
Original |
hkq04021n2b-t430ma20000pcs500mhz+1 | |
|
Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04021N2B-E Features Item Summary 1.2nH(-0.1nH to +0.1nH), 430mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum) |
Original |
hkq04021n2b-e430ma40000pcs500mhz+1 | |
|
Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC2012T2R2M Features Item Summary 2.2 H(±20%), 430mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions |
Original |
lbc2012t2r2m430ma3000pcs96mhz+1 | |
|
|
|||
LTUG
Abstract: mse8 marking ltug linear RLF5018T CDRH5D18-4R1 CDRH5D28-5R3 LT1946 LT1946EMS8 LT1946EMS8E RLF5018T-4R7M1R4
|
Original |
lt1946430ma300malt1944/lt1944-1+13 | |
|
Contextual Info: Spec Sheet INDUCTORS Multilayer Chip Inductors for High Frequency Applications HK series HK06031N5S-T Features Item Summary 1.5nH(-0.3nH to +0.3nH), 430mA, 4, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 15000pcs Products characteristics table |
Original |
hk06031n5s-t430ma15000pcs100mhz+1 | |
LTUG
Abstract: marking ltug linear cdrh5d285r3 CDRH5D18-5R4
|
Original |
lt1946300mv430malt1613+7 | |
|
Contextual Info: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance |
Original |
dmn62d0sfd430ma540maaec-q101+1 | |
CDRH5D18-4R1
Abstract: CDRH5D28-5R3 LT1946 LT1946EMS8 RLF5018T-4R7M1R4 UPS120 ltug rc coupled amplifier
|
Original |
lt1946430ma300malt1944/lt1944-1+11 | |
SOT23 PABContextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) max Features • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
dmp2004k-150ma-430maaec-q101+2 | |
|
Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04021N1B-T Features Item Summary 1.1nH(-0.1nH to +0.1nH), 430mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum) |
Original |
hkq04021n1b-t430ma20000pcs500mhz+1 | |
CDRH5D18-4R1
Abstract: CDRH5D28-5R3 LT1946 LT1946EMS8 RLF5018T-4R7M1R4 UPS120 LTUG
|
Original |
lt1946430ma300malt1944/lt1944-1+10 | |
|
Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max Package -20V 0.9Ω @ VGS = -4.5V 2.0Ω @ VGS = -1.8V SOT23 ID TA = +25°C -430mA -150mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching |
Original |
dmp2004k-430ma-150mads30933 | |
|
Contextual Info: Spec Sheet INDUCTORS Axial Leaded Inductors LAN02TA1R8J Features Item Summary 1.8 H ±5% , 430mA, 50, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.6(max)x2.4(max)mm |
Original |
lan02ta1r8j430ma2000pcs96mhz+2 | |