SI5410DU Search Results
SI5410DU Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI5410DU-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 12A PPAK CHIPFET | Original | 9 |
SI5410DU Price and Stock
Vishay Siliconix SI5410DU-T1-GE3SI5410DU-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 12 A, 40 V, 8-PIN POWERPAK CHIPFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5410DU-T1-GE3 | Bulk | 300 |
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SI5410DU Datasheets Context Search
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Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability |
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si5410du2002/95/ec2011/65/eujs709a+1 | |
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Abstract: Si5410DU
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Si5410DUContextual Info: SPICE Device Model Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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PowerPAK ChipFET SingleContextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability |
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Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 VDS (V) 40 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Part # Code S 6 |
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si5410du2011/65/eu2002/95/ec12-mar-12 | |
transistor 6822
Abstract: transistors 6822 6822 90980 on 4409 6822 transistor transistor on 4409 6822 equivalent AN609 Si5410DU
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PowerPAK ChipFET SingleContextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability |
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si5410dusi5410du-t1-ge311-mar-11powerpak chipfet single | |
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Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability |
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si5410du2002/95/ec2011/65/eujs709a+1 | |
Si5410DU
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Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability |
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si5410du2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability |
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Contextual Info: SPICE Device Model Si5410DU www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Contextual Info: V i s h ay I n te r tec h n olo g y, I n c . Power mosfets Powe rPA K ChipFET® M O S F E ts Product Sheet 3 W Maximum Power Dissipation in Compact 3 mm x 1.8 mm Footprint Area: Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints |
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Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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Si542Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint |
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SI5517
Abstract: si5459
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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