SI5410 Search Results

Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability

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Abstract: Si5410DU
Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability

Si5410DU

Contextual Info: SPICE Device Model Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

PowerPAK ChipFET Single

Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability

Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 VDS (V) 40 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Part # Code S 6

transistor 6822

Abstract: transistors 6822 6822 90980 on 4409 6822 transistor transistor on 4409 6822 equivalent AN609 Si5410DU
Contextual Info: Si5410DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

PowerPAK ChipFET Single

Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability

Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability

Si5410DU

Abstract: si5410
Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability

Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability

Contextual Info: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability

Contextual Info: SPICE Device Model Si5410DU www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

DS1304

Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
Contextual Info: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ

Contextual Info: V i s h ay I n te r tec h n olo g y, I n c . Power mosfets Powe rPA K ChipFET® M O S F E ts Product Sheet 3 W Maximum Power Dissipation in Compact 3 mm x 1.8 mm Footprint Area: Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

SI54-2R2L

Abstract: SI54-1R0L 4R7L SI54-330K
Contextual Info: SMT Power Inductor SI54 Type Features „ „ „ „ „ „ „ „ RoHS compliant. Low profile 3.5mm max.Height , SMD type. Unshielded. Self-leads,suitable for high density mounting. High energy storage and low DCR Provided with embossed carrier tape packing.

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Si542

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint

SI5517

Abstract: si5459
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline AND TEC I INNOVAT O L OGY PowerPAK ChipFET® N HN POWER MOSFETs O 19 62-2012 Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

SI54-1R5

Abstract: SI54-100 SI54-120 SI54-150 SI54-180 SI54-1R0 SI54-1R8
Contextual Info: SMT Power Inductor SI54 Type Features • ■ ■ ■ ■ ■ Low profile 3.5mm max. height SMD type. Unshielded. Self-leads, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,