SI5936DU Search Results
SI5936DU Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SI5936DU-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 6A PWRPK CHPFET | Original | 9 |
SI5936DU Price and Stock
Vishay Siliconix SI5936DU-T1-GE3MOSFET 2N-CH 30V 6A PPAK CHIPFET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5936DU-T1-GE3 | Cut Tape | 2,701 | 1 |
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SI5936DU-T1-GE3 | Bulk | 20 |
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Vishay Intertechnologies SI5936DU-T1-GE3DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI5936DU-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5936DU-T1-GE3 | Reel | 12 Weeks | 3,000 |
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SI5936DU-T1-GE3 | 152,699 |
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SI5936DU-T1-GE3 | Reel | 3,000 |
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SI5936DU-T1-GE3 | Reel | 6,000 | 3,000 |
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SI5936DU-T1-GE3 | 14 Weeks | 3,000 |
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SI5936DU-T1-GE3 | 105,500 |
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SI5936DU-T1-GE3 | 13 Weeks | 3,000 |
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Vishay Intertechnologies SI5936DUT1GE3AVAILABLE EU |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5936DUT1GE3 | 1,007 |
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Vishay Huntington SI5936DU-T1-GE3MOSFET 2N-CH 30V 6A PWRPK CHPFET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5936DU-T1-GE3 | 93,000 |
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SI5936DU Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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si5936
Abstract: S12 MARKING CODE DIODE
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Original |
Si5936DU Si5936DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 si5936 S12 MARKING CODE DIODE | |
Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® |
Original |
Si5936DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si5936DU www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
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Si5936DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® |
Original |
Si5936DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® |
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Si5936DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si542Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint |
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Si5936DU Si5944DU Si5999EDU Si5997DU Si5517DU VMN-PT0102-1402 Si542 |