SI5936 Search Results
SI5936 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI5936DU-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 6A PWRPK CHPFET | Original | 9 |
SI5936 Price and Stock
Vishay Intertechnologies SI5936DU-T1-GE3Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK ChipFET T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5936DU-T1-GE3 | 3,000 | 3,000 |
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SI5936DU-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SI5936DU-T1-GE3 | 3,000 | 52 Weeks | 3,000 |
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| SI5936DU-T1-GE3 | Cut Strips | 4 | 1 |
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SI5936DU-T1-GE3 | Cut Tape | 1,835 | 1 |
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| SI5936DU-T1-GE3 | Tape & Reel | 3,000 |
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SI5936DU-T1-GE3 | Reel | 3,000 |
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SI5936DU-T1-GE3 | 3,000 |
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SI5936DU-T1-GE3 | 54 Weeks | 3,000 |
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SI5936DU-T1-GE3 | 53 Weeks | 3,000 |
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Vishay Siliconix SI5936DU-T1-GE3SI5936DU-T1-GE3 DUAL N-CHANNEL MOSFET TRANSISTOR,6 A,30V,8-PIN POWERPAK CHIPFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5936DU-T1-GE3 | Bulk | 3,000 |
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Get Quote | ||||||
Vishay Huntington SI5936DU-T1-GE3MOSFET 2N-CH 30V 6A PWRPK CHPFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5936DU-T1-GE3 | 18,000 |
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SI5936 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
si5936
Abstract: S12 MARKING CODE DIODE
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Original |
si5936dusi5936du-t1-ge32002/95/ec2011/65/eu+4 | |
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Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® |
Original |
si5936du2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SPICE Device Model Si5936DU www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
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si5936du2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® |
Original |
si5936du2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® |
Original |
si5936du2002/95/ec2011/65/eujs709a+1 | |
Si542Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint |
Original |
si5936dusi5944dusi5999edusi5997du+3 |