SI4102 Search Results

SI4102 Datasheets (2)

Filter by Manufacturer

Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4102DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.8A 8-SOIC	Original	PDF		10
SI4102DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.8A 8-SOIC	Original	PDF		10

SI4102 Price and Stock

Filter by Manufacturer

Select Manufacturer


Others SI4102DY-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4102DY-E3		2,416			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4102DYT1E3 N-CHANNEL 100-V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4102DYT1E3		6,954			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4102DYT1GE3 N-CHANNEL 100-V (D-S) MOSFET Small Signal Field-Effect Transistor, 0.0027A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4102DYT1GE3		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI4102 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SI-4102 Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested	Original	si4102dy si4102dy-t1-e3 si4102dy-t1-ge3 11-mar-11 +1si-4102	PDF
Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested	Original	si4102dy si4102dy-t1-e3 si4102dy-t1-ge3 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: SPICE Device Model Si4102DY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si4102dy 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: New Product Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d rDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.6 nC APPLICATIONS	Original	si4102dy si4102dy-t1-e3 18-jul-08	PDF
SI-4102 Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested	Original	si4102dy si4102dy-t1-e3 si4102dy-t1-ge3 2011/65/eu +32002/95/ec 12-mar-12 si-4102	PDF
SI-4102 Abstract: AN609 Si4102DY 69297 Contextual Info: Si4102DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si4102dy an609 13-aug-07 si-4102 +169297	PDF
Si4102DY-T1-E3 Abstract: SI-4102 si4102 Si4102DY RG370 Contextual Info: New Product Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d rDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.6 nC APPLICATIONS	Original	si4102dy si4102dy-t1-e3 08-apr-05 si-4102 +2si4102 rg370	PDF
SI-4102 Abstract: Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 DSA0038151 Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested	Original	si4102dy si4102dy-t1-e3 si4102dy-t1-ge3 18-jul-08 +2si-4102 dsa0038151	PDF
SI-4102 Abstract: Si4102DY SI4102 Contextual Info: SPICE Device Model Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4102dy 18-jul-08 si-4102 si4102	PDF
Contextual Info: Si4102DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () ID (A) 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 d • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization: For definitions of compliance please see	Original	si4102dy si4102dy-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested	Original	si4102dy si4102dy-t1-e3 si4102dy-t1-ge3 2011/65/eu +22002/95/ec 12-mar-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	diod92 vmn-sg2127-0911 diode sot-23 marking 15d si4210 +8si4812b si-4102 si7149dp sim400 si4932 si7135 sib914 si4477	PDF