SI4427 Search Results

Si4427BDY

Abstract: Si4427BDY-T1
Contextual Info: Si4427BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.0105 @ VGS = - 10 V - 12.6 0.0125 @ VGS = - 4.5 V - 11.5 0.0195 @ VGS = - 2.5 V - 9.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S

Si4427BDY-T1-E3

Abstract: Si4427BDY-E3 Si4427BDY Si4427BDY-T1 Si4427DY Si4427DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si4427BDY vs. Si4427DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4427BDY Replaces Si4427DY Si4427BDY-E3 (Lead (Pb)-free version) Replaces Si4427DY Si4427BDY-T1 Replaces Si4427DY-T1

Si4427BDY

Contextual Info: SPICE Device Model Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4427DY

Abstract: 71488
Contextual Info: SPICE Device Model Si4427DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 - 30 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 - 30 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 FEATURES rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 D TrenchFETr Power MOSFETs S SO-8 S 1

74093

Abstract: 7916 AN609 Si4427BDY
Contextual Info: Si4427BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 - 30 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition

71488

Abstract: Si4427DY
Contextual Info: SPICE Device Model Si4427DY P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Contextual Info: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • TrenchFET Power MOSFETS Pb-free Available RoHS*

71308

Abstract: Si4427DY
Contextual Info: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 30 rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G

Si4427BDY-E3

Abstract: Si4427BDY Si4427BDY-T1
Contextual Info: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.0105 @ VGS = −10 V −12.6 0.0125 @ VGS = −4.5 V −11.5 0.0195 @ VGS = −2.5 V −9.2 D TrenchFETr Power MOSFETS SO-8 S 1 8 D S 2 7 D S

Si4427BDY

Abstract: si4427
Contextual Info: SPICE Device Model Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4427BDY

Abstract: Si4427BDY-T1 Si4427BDY-T1-E3 si4427
Contextual Info: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • TrenchFET Power MOSFETS Pb-free Available RoHS*

Contextual Info: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 - 30 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.0105 @ VGS = −10 V −12.6 0.0125 @ VGS = −4.5 V −11.5 0.0195 @ VGS = −2.5 V −9.2 D TrenchFETr Power MOSFETS SO-8 S 1 8 D S 2 7 D S

Contextual Info: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View

SI4427BDY-T1-GE3

Abstract: Si4427BDY Si4427BDY-T1-E3
Contextual Info: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 - 30 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition

SI4435BDY

Abstract: pcie connector
Contextual Info: MIC2341/2341R Dual-Slot PCI Express Hot-Plug Controller General Description The MIC2341 is a dual-slot power controller supporting the power distribution requirements for Peripheral Component Interconnect Express PCI Express Hot-Plug compliant systems. The MIC2341 provides complete power control

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178