SI4435BDY Search Results

SI4435BDY-T1

Abstract: Si4435BDY
Contextual Info: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.020 @ VGS = −10 V −9.1 0.035 @ VGS = −4.5 V −6.9 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS

Contextual Info: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 9.1 0.035 at VGS = - 4.5 V - 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Advanced High Cell Density Process

Si4435BDY

Contextual Info: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.020 @ VGS = −10 V −9.1 0.035 @ VGS = −4.5 V −6.9 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS

Si4435BDY

Abstract: si4435
Contextual Info: SPICE Device Model Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

m 6125

Abstract: AN609 Si4435BDY
Contextual Info: Si4435BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4435BDY

Abstract: Si4435BDY-T1 72123
Contextual Info: Si4435BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.020 @ VGS = - 10 V - 9.1 APPLICATIONS 0.035 @ VGS = - 4.5 V - 6.9 D Load Switches

Si4435BDY

Contextual Info: SPICE Device Model Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 9.1 0.035 at VGS = - 4.5 V - 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Advanced High Cell Density Process

Si4435BDY

Abstract: Si4435BDY-T1
Contextual Info: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.020 @ VGS = −10 V −9.1 0.035 @ VGS = −4.5 V −6.9 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS

Si4435BDY

Abstract: Si4435BDY-T1
Contextual Info: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.020 @ VGS = - 10 V - 9.1 APPLICATIONS 0.035 @ VGS = - 4.5 V - 6.9 D Load Switches

Contextual Info: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 9.1 0.035 at VGS = - 4.5 V - 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Advanced High Cell Density Process

Si4435BDY

Abstract: diode 91A
Contextual Info: SPICE Device Model Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4435DDY-T1-E3

Abstract: si4435ddy Si4435BDY Si4435BDY-T1-E3 Si4435BDY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si4435DDY vs. Si4435BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4435DDY-T1-E3 replaces Si4435BDY-T1-E3 Si4435DDY-T1-E3 replaces Si4435BDY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si4435BDY

Contextual Info: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.020 @ VGS = −10 V −9.1 0.035 @ VGS = −4.5 V −6.9 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS

Contextual Info: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 9.1 0.035 at VGS = - 4.5 V - 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Advanced High Cell Density Process

Si4435BDY-T1-E3

Abstract: Si4435BDY Si4435BDY-T1-GE3
Contextual Info: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 9.1 0.035 at VGS = - 4.5 V - 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Advanced High Cell Density Process

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

lenovo

Abstract: TP8370 TP8107 TP8117 TP8111 C9041 C9045 TP8116 lenovo t42 TP8109
Contextual Info: A B C D E F G H I J K L M N O DC-IN PAGE 75 9 9 ITP CONNECTOR PAGE 6 CLK GEN Merom SFF PAGE 3,4,5 THERMAL SENSEER 8 VCC3_EC/VCC5M TI51220 PAGE 19 ICS954309 PAGE 81 AGTL+ FSB 800/667MHz 4X Data 2X Address PAGE 69 1R25AMT (BD3508) PAGE 88 LVDS SO-DIMM DRAM

CIRCUIT DIAGRAM foxconn g31

Abstract: h0068nl R7F7 4431b foxconn circuit diagram 4431bdy foxconn g31 Foxconn MS01 transformer output 6pin foxconn
Contextual Info: W03 Block Diagram PCB LAYER L1: L2: L3: L4: L5: L6: Signal 1 VCC/GND Signal 2 Signal 3 GND Signal 4 Mobile CPU CLK GEN ICS954226 03 T8 04,05 HOST BUS 16,17 Alviso GM 11,12 CRT CONN MAX1999 DB INPUTS OUTPUTS 5V_S5 LVDS 3V_S5 LCD MAX651024 DCBATOUT 5V_AUX 14''WXGA

EMC4000-fzg

Abstract: EMC4000 SCD1U25V3KX-GP MEC5004 SE220U2VDM-8GP seagate pcb schematic SCD1U10V2KX-4GP SCD1U10V2KX SC10U6D3V5MX-3GP stac9200x5
Contextual Info: 5 4 Clock Generator ICS954305D/CY28447LFXCT 4 3 2 Bermuda Block Diagram Intel Mobile CPU Yonah 2M/Meron FSB: 533 or 667 Mhz Project code:91.4E201.001 PCB P/N :05224 PCB REVISION:-1 DELL REVISION:A00 System DC/DC 39 5,6 D 533/667MHz HOST BUS 200-PIN DDR2 SODIMM

SI4435BDY

Abstract: pcie connector
Contextual Info: MIC2341/2341R Dual-Slot PCI Express Hot-Plug Controller General Description The MIC2341 is a dual-slot power controller supporting the power distribution requirements for Peripheral Component Interconnect Express PCI Express Hot-Plug compliant systems. The MIC2341 provides complete power control

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

1N4007 MINI MELF

Contextual Info: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A