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    SSM6J503NU Search Results

    SSM6J503NU Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SSM6J503NU
    Toshiba Transistors - Mosfets Original PDF 238.08KB 6
    SSM6J503NU
    Toshiba Japanese - Transistors - Mosfets Original PDF 250.71KB 6
    SSM6J503NU,LF(T
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P CH 20V 6A 2-2AA1A Original PDF 263.78KB
    SSM6J503NU,LF
    Toshiba SSM6J503NU - PB-FREE TRANSISTORS SMALL-SIGNAL MOS FETS(SINGLE) Original PDF 238.1KB 6
    SF Impression Pixel

    SSM6J503NU Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components SSM6J503NU,LF(T

    Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
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    TME SSM6J503NU,LF(T 3
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    Newark SSM6J503NU,LF(T Bulk 3,000
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    EBV Elektronik SSM6J503NU,LF(T 3,000 15 Weeks 3,000
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    Toshiba America Electronic Components SSM6J503NU,LF

    - Tape and Reel (Alt: SSM6J503NU,LF)
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    Avnet Americas SSM6J503NU,LF Tape & Reel 16 Weeks 3,000
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    Mouser Electronics SSM6J503NU,LF 2,999
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    Quest Components SSM6J503NU,LF(B 1,360
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    Toshiba America Electronic Components SSM6J503NU

    Power Management Switch Applications
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    Win Source Electronics SSM6J503NU 85,500
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    SSM6J503NU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SSM6J503NU 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM6J503NU パワーマネジメントスイッチ 単位: mm • • 1.5V 駆動です オン抵抗が低い: RDS ON = 89.6 mΩ (最大) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (最大) (@VGS = -1.8 V)


    Original
    ssm6j503nu PDF

    ssm6j503nu

    Contextual Info: SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM6J503NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V)


    Original
    ssm6j503nu PDF

    Contextual Info: SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS SSM6J503NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V)


    Original
    ssm6j503nu PDF

    Contextual Info: SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM6J503NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V)


    Original
    ssm6j503nu PDF

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Contextual Info: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


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    aon2240aon2401aon2405aon2406+14aon2407aon2408aon2409aon2410aon2420aon2701nx3008irlhs6242sia431djssm6j503nuirlhs2242dmn3730ufb4fdma1028nzfdma3028n PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    200-mabce0030dssm3j307tssm3j328r+1ssm3j334r PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075 PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    bce0082btpca*8064tk12a10k3tpca8077+72sk3567 equivalentssm3j328tpca8077-htj11a10m3tk50e06k3atpca*8077tpca8028 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123 PDF

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


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    bce0082htoshiba laptop charging circuit diagramtpc8123tph1400anh+6tpca8047-htpc 8127tpc8123 cross referencessm3j328rssm3j334rtpc8120 PDF

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


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    tk12a10k3tk12a10ktk33a60vtpca*8065+6tk40e10k3ssm6k407tutpca*8064tk6a65d equivalenttpca*8036tk100g10n1 PDF

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    bcj0082dbcj0082ctk12a10k3tk25e06k3+8tk50e06k3atk20e60utpca*8065tj11a10m3ssm6j501nutpca8077tj9a10m3tk8a10k3 PDF

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    bcj0082cbcj0082btpca8077tk12a10k3+8tk25e06k3tpca*8030tj11a10m3ssm6j501nutpca8057-h2sk4112tpc8217-htk50e06k3a PDF