|
Contextual Info: TOSHIBA 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR 3 « war ; v \ A• SILICON P CHANNEL MOS TYPE d■ O - V■ Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION 15.a±0.5^jZÍ3.6±0-2 V•n c o = _ -i a n-v A High Breakdown Voltage 1700 • High Forward Transfer Admittance : |Yf^| =4.0S Typ.
|
OCR Scan
|
2sj440-y |
PDF
|
2SJ440
Abstract: Toshiba 2SJ
Contextual Info: 2SJ440 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ440 Audio Frequency Power Amplifier Application • High breakdown voltage: VDSS = −180 V • High forward transfer admittance: |Yfs| = 4.0 S typ. Unit: mm Maximum Ratings (Ta = 25°C)
|
Original
|
2sj440toshiba 2sj |
PDF
|
|
Contextual Info: TOSHIBA 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440-Y Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage :V d S S = —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
2sj440-y |
PDF
|
2SJ440
Contextual Info: T O SH IB A 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440-Y AUDIO FREQUENCY POWER AMPLIFIER APPLICATION U nit in mm 1 5 .8 ± 0 .5 • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
2sj440-y--180v2-16f1b2sj440 |
PDF
|
toshiba lot number type
Abstract: 2f3 transistor 2SJ440-Y 2-16F1B 2SJ440 Toshiba 2SJ
Contextual Info: T O S H IB A 2SJ440-Y 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage : V]}gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
2sj440-ytoshiba lot number type2f3 transistor2-16f1b+22sj440toshiba 2sj
|
PDF
|
toshiba marking code transistor
Abstract: 2SJ440 Toshiba 2SJ
Contextual Info: 2SJ440 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ440 Audio Frequency Power Amplifier Application • High breakdown voltage: VDSS = −180 V • High forward transfer admittance: |Yfs| = 4.0 S typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
2sj4402-16f1btoshiba marking code transistortoshiba 2sj |
PDF
|
2SJ440-Y
Abstract: Toshiba 2SJ
Contextual Info: TO SH IB A 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ44Q-Y Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage : V j g s = —180V High Forward Transfer Admittance : |Yfs|=4.0S Typ.) MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
2sj440-y2-16dtoshiba 2sj |
PDF
|
2SJ440
Abstract: Toshiba 2SJ
Contextual Info: 2SJ440 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ440 Audio Frequency Power Amplifier Application • High breakdown voltage: VDSS = −180 V • High forward transfer admittance: |Yfs| = 4.0 S typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
2sj4402-16f1btoshiba 2sj |
PDF
|
2f3 transistor
Abstract: 2SJ440-Y Toshiba 2SJ
Contextual Info: TOSHIBA 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440-Y Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage : V]}gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
2sj440-y2-16f1b2f3 transistortoshiba 2sj |
PDF
|
2SJ440
Abstract: toshiba marking Toshiba 2SJ
Contextual Info: TO SH IBA 2SJ440 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage : V ßgg = —180 V High Forward Transfer Admittance : |Yfs| = 4.0 S Typ. MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
2sj4402-16f1b-10matoshiba marking+1toshiba 2sj
|
PDF
|
5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
5252 f 1009 4-pintpc 8028marking s3h sot363tk8a50d equivalent+6tk6a65d equivalent2sk4112tpca8030-htoshiba laptop charging circuit diagramtk80a08k3tpca*8025
|
PDF
|
2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
|
Original
|
bce0017b2sk20562sk16032sk1603 datasheet+7toshiba "ultra high speed" diode 1atransistor 2sk16032sk3561 equivalent2sk2915 equivalent1045y2sk3569 equivalent2sk1078
|
PDF
|
2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
|
Original
|
bce0017fe-28831bce0017g2sk3567 equivalent+92sk3569 equivalenttpca*8023tk8a50d equivalent2sk20562sk3878 equivalenttpca80232sk941 equivalent2sk3561 equivalent2sk1603
|
PDF
|
GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
|
Original
|
sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01
|
PDF
|
|
|
IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
|
Original
|
scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075
|
PDF
|
2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
|
Original
|
bcj0082bbcj0082a2sk4207to220sis+8tpca*8023tk80a08k3tpc8119tk40a08k32sk4112ssm3j16fs2sk3568tpc8a03
|
PDF
|
TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
bce0082btpca*8064tk12a10k3tpca8077+72sk3567 equivalentssm3j328tpca8077-htj11a10m3tk50e06k3atpca*8077tpca8028
|
PDF
|
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
|
Original
|
2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123
|
PDF
|
transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
|
Original
|
sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122
|
PDF
|
2SK3566 equivalent
Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
|
Original
|
bce0017es-167bce0017f2sk3566 equivalent+92sk3562 equivalent2sk3561 equivalent2sk3878 equivalent2sk3568 equivalent2sk3911 equivalent2sk941 equivalenttpc8118 equivalent replacementtpc81182sk3767 equivalent
|
PDF
|
2SK1603
Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
Contextual Info: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1
|
Original
|
bce0017a2sk16032sk3561 equivalentun 1044+72sj2382sk1603 datasheet2sk20392sk20302sk20562sk14872sk1078
|
PDF
|
TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4
|
Original
|
tk12a10k3tk12a10ktk33a60vtpca*8065+6tk40e10k3ssm6k407tutpca*8064tk6a65d equivalenttpca*8036tk100g10n1
|
PDF
|
tpc8118 equivalent replacement
Abstract: SSM3J307T Zener diode smd 071 A01
Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
bce0082atpc8118 equivalent replacementssm3j307tzener diode smd 071 a01 |
PDF
|
TK12A10K3
Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
|
Original
|
bcj0082dbcj0082ctk12a10k3tk25e06k3+8tk50e06k3atk20e60utpca*8065tj11a10m3ssm6j501nutpca8077tj9a10m3tk8a10k3
|
PDF
|
