TJ150F Search Results

Contextual Info: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

Contextual Info: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

Contextual Info: TJ150F04M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ150F04M3L 1. 用途 • 車載用 • リレー駆動用 • DC-DCコンバータ用 • モータドライブ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.2 mΩ (標準) (VGS = -10 V)

Contextual Info: TJ150F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F06M3L 1. Applications • Relay Drivers • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

Contextual Info: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V)

Contextual Info: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

Contextual Info: TJ150F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F06M3L 1. Applications • Relay Drivers • Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

TJ150F06M3L

Contextual Info: TJ150F06M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ150F06M3L 1. 用途 • リレードライブ用 • モータドライブ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 4.3 mΩ (標準) (VGS = -10 V) (2) 漏れ電流が低い。: IDSS = -10 µA (最大) (VDS = -60 V)

Contextual Info: TJ150F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F06M3L 1. Applications • Relay Drivers • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

Contextual Info: TJ150F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F06M3L 1. Applications • Automotive • Relay Drivers • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

TK12A10K3

Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4

TK12A10K3

Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TB2926

Abstract: tc94a92fg TC94A93MFG TC90105FG TB2915 TC90104FG tc94A96mfg TB9061FNG TC94A93 tb2929
Contextual Info: システムカタログ 2010-3 システムカタログ 車載ソリューション h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 情報・エンターテインメント Information & Entertainment クルマの未来を変える東芝の先進半導体テクノロジー

TPCA8077

Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3