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    TK100 Datasheets (50)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TK100
    		Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.86KB 1
    TK-100-0050
    		Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 50NS MAX Scan PDF 86.44KB 1
    TK-100-0075
    		Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 75NS MAX Scan PDF 86.44KB 1
    TK-100-0100
    		Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 100NS MAX Scan PDF 86.44KB 1
    TK-100-0150
    		Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 150NS MAX Scan PDF 86.44KB 1
    TK-100-0250
    		Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 250NS MAX Scan PDF 86.44KB 1
    TK-100-0500
    		Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 500NS MAX Scan PDF 86.44KB 1
    TK1000A-R015
    		Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF 181.69KB 2
    TK1000B-N000
    		Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF 181.69KB 2
    TK1000B-R015
    		Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF 181.69KB 2
    TK1000N-N000
    		Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF 181.69KB 2
    TK1000N-R015
    		Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF 181.69KB 2
    TK1005800000G
    		Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 10P SIDE ENTRY 5MM PCB Original PDF 81.32KB
    TK100A06N1
    		Toshiba TK100A06N1 - Nch 30V Original PDF 236.03KB 9
    TK100A06N1
    		Toshiba Japanese - Transistors - Mosfets Original PDF 340.68KB 9
    TK100A06N1
    		Toshiba Transistors - Mosfets Original PDF 235.92KB 9
    TK100A06N1,S4X
    		Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 100A TO-220 Original PDF 9
    TK100A08N1
    		Toshiba TK100A08N1 - Nch 60V Original PDF 237.05KB 9
    TK100A08N1
    		Toshiba Transistors - Mosfets Original PDF 237.96KB 9
    TK100A08N1
    		Toshiba Japanese - Transistors - Mosfets Original PDF 343.83KB 9
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    TK100 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK100S04N1L,LXHQ(O

    Trans MOSFET N-CH Si 40V 100A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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    Verical TK100S04N1L,LXHQ(O 1,221 67
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    Quest Components () TK100S04N1L,LXHQ(O 976
    • 1 $2.94
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    TK100S04N1L,LXHQ(O 976
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    Toshiba America Electronic Components TK100A06N1,S4X(S

    Trans MOSFET N-CH Si 60V 263A 3-Pin(3+Tab) TO-220SIS Magazine
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    Verical TK100A06N1,S4X(S 700 700
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    Arrow Electronics TK100A06N1,S4X(S 750 18 Weeks 700
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    Newark TK100A06N1,S4X(S Bulk 1
    • 1 $2.71
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    TME TK100A06N1,S4X(S 32 1
    • 1 $1.80
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    EBV Elektronik TK100A06N1,S4X(S 3,100 19 Weeks 50
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    Toshiba America Electronic Components TK100E06N1,S1X(S

    Trans MOSFET N-CH Si 60V 263A 3-Pin(3+Tab) TO-220 Magazine
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    Verical TK100E06N1,S1X(S 87 2
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    Newark TK100E06N1,S1X(S Bulk 1 1
    • 1 $2.79
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    TME TK100E06N1,S1X(S 1
    • 1 $3.56
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    EBV Elektronik TK100E06N1,S1X(S 19 Weeks 50
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    Toshiba America Electronic Components TK100L60W,VQ(O

    Trans MOSFET N-CH Si 600V 100A 3-Pin(3+Tab) TO-3PL
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    Verical TK100L60W,VQ(O 74 1
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    Arrow Electronics TK100L60W,VQ(O 74 1
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    Newark TK100L60W,VQ(O Bulk 194 1
    • 1 $22.59
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    EBV Elektronik TK100L60W,VQ(O 27 Weeks 100
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    Toshiba America Electronic Components TK100E10N1,S1X(S

    Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220 Magazine
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    Verical TK100E10N1,S1X(S 45 2
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    Arrow Electronics TK100E10N1,S1X(S 45 1
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    Newark TK100E10N1,S1X(S Bulk 623 1
    • 1 $2.80
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    Avnet Asia TK100E10N1,S1X(S 28 Weeks 500
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    EBV Elektronik TK100E10N1,S1X(S 50 19 Weeks 50
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    TK100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)


    Original     		tk100f04k3laec-q101o-220sm PDF

    K100F06K

    Abstract: TK100 TK100F06K3
    Contextual Info: TK100F06K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIV TK100F06K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • 取り扱いが簡単なエンハンスメントタイプです。


    Original     		tk100f06k3k100f06ktk100 PDF

    Contextual Info: TK100A06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100A06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.2 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)


    Original     		tk100a06n1o-220sis PDF

    Contextual Info: TK100A10N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100A10N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 3.1 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 100 V)


    Original     		tk100a10n1o-220sis PDF

    Contextual Info: TK100E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original     		tk100e10n1o-220 PDF

    Contextual Info: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		tk100e06n1o-220 PDF

    Contextual Info: TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		tk100f04k3 PDF

    TK100L60W

    Abstract: 2-21F1S
    Contextual Info: TK100L60W MOSFETs Silicon N-Channel MOS DTMOS TK100L60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.015 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		tk100l60w2-21f1s PDF

    Contextual Info: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)


    Original     		tk100f04k3lo-220sm PDF

    Contextual Info: TK100A08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		tk100a08n1o-220sis PDF

    Contextual Info: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		tk100e06n1o-220 PDF

    Contextual Info: TK100A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		tk100a06n1o-220sis PDF

    Contextual Info: TK100E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original     		tk100e10n1o-220 PDF

    Contextual Info: TK100E08N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100E08N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.6 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 80 V)


    Original     		tk100e08n1o-220 PDF

    toshiba transistor date code marking

    Abstract: TK100F06K3 K100F06K
    Contextual Info: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		tk100f06k3toshiba transistor date code markingk100f06k PDF

    Contextual Info: TK100E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		tk100e08n1o-220 PDF

    Contextual Info: TK100E06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100E06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 1.9 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)


    Original     		tk100e06n1o-220 PDF

    Contextual Info: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		tk100f06k3 PDF

    Contextual Info: TK100A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original     		tk100a10n1o-220sis PDF

    Contextual Info: TK100A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		tk100a06n1o-220sis PDF

    Contextual Info: TK100S04N1L MOSFETs Silicon N-channel MOS U-MOS-H TK100S04N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)


    Original     		tk100s04n1l PDF

    Contextual Info: TK100E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		tk100e08n1o-220 PDF

    Contextual Info: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		tk100e06n1o-220 PDF

    Contextual Info: TK100L60W MOSFETs Silicon N-Channel MOS DTMOS TK100L60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.015 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		tk100l60w PDF