GT30J122A Search Results

GT30J122A Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J122A		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet

GT30J122A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
GT30J122A		Toshiba	GT30J122A - Discrete IGBTs, GT30J122A	Original	PDF	197.86KB	7

GT30J122A Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components GT30J122A Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	GT30J122A		5,300			1 - 10 - 100 $0.93 1000 $0.72 10000 $0.72	Buy Now
Toshiba America Electronic Components GT30J122A(STA1ED Low Saturation Voltage
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	GT30J122A(STA1ED		3,000			1 - 10 - 100 $1.14 1000 $0.92 10000 $0.92	Buy Now

GT30J122A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.	Original	GT30J122A	PDF
GT30J122A Abstract: gt30j1 Contextual Info: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.	Original	GT30J122A GT30J122A gt30j1	PDF
Contextual Info: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.	Original	GT30J122A	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF