2SA1384 Search Results

Contextual Info: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

Contextual Info: SMD Type Product specification 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE sat = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515

2SA1384

Abstract: 2SC3515 A1384
Contextual Info: TO SH IBA 2SA1384 2 S A 1 38 4 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS High Voltage : VCBO = - 300V, VCEO - - 300V

2SA1384

Abstract: 2SC3515
Contextual Info: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

2SA1384

Contextual Info: TOSHIBA 2SA1384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 13 8 4 HIGH VOLTAGE CONTROL APPLICATIONS U nit in mm PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS l.GMAX. 4.6MAX. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS 1.7MAX.

Contextual Info: SMD Type Product specification 2SC3515 Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE sat = 0.5V (max) Small Collector Output Capacitance: Cob = 3pF(typ.) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SA1384

2SA1384

Abstract: 2SC3515
Contextual Info: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

Contextual Info: TO SHIBA 2SA1384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 384 HIGH VOLTAGE CONTROL APPLICATIONS U nit in mm PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS 1.6MAX. 4.6MAX. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS 1.7MAX.

2SA1384

Abstract: 2SC3515
Contextual Info: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

2SA1384

Abstract: 2SC3515
Contextual Info: TOSHIBA 2SA1384 2 S A 1 384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS 1.7 M A X . High Voltage

2SA1384

Abstract: 2SC3515
Contextual Info: 2SA1384 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SA1384 ○ 高電圧制御用 ○ プラズマディスプレイニクシー管駆動用 ○ ブラウン管輝度調整用 単位: mm • 高耐圧です。 : VCBO = −300 V, VCEO = −300 V

Contextual Info: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

2SA1384

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1384 HIGH VOLTAGE CONTROL APPLICATIONS. Unit in mm PLASMA DISPLY, NIXIE TUBE DRIVER APPLICATIONS. 1.6 MAX. 4.6 MAX. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. 1.7 MAX. E 3 - FEATURES: .High Voltage : V q b o =_300V, V c e O=_300V

2SA1146

Abstract: 2SB1200 2SB764 2SB793 2SB605 2SB507 2SB744 NEC 2SA874 2SB1185 2SB1576
Contextual Info: - Si % Type No. tt € Manuf. = m SANYO ill TOSHIBA 2 SB 1043 □— A 2SB764 2SB 1044 □— A 2SA1705 2SB 1045 U 2SA1415 2SA1200 2SB 1046 B ±L 2SA1415 2SA1384 2SB 1047 ±L 2SA1415 2SB1200 2SB 1048 i 2SB1126 T 2SA1783 T 2SA1702 2SB 1051 □— A 2SA1338

2SA1384

Abstract: smd symbols smd transistor marking br transistor smd marking 2SC3515
Contextual Info: Transistors SMD Type High Voltage Control Applications 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE sat = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package

2SA1384

Abstract: 2SC3515 A1384
Contextual Info: TO SH IBA 2SA1384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 384 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS High Voltage : VCBO = - 300V, VCEO - - 300V

Contextual Info: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC3301

Abstract: 2sa120 2SC2880
Contextual Info: llll Powered by 2 POWER MINI PACKAGE SERIES (S0T-89) ICminer.com Electronic-Library Application Pc * Mounted on ceramic substrat? of 250mma x 0.8mm v CE0 >C Pc PC* (V) (A) (W) (W) hFE Typo No. NPN PNP f-j- TYP. v CE(sat) M A X - V CE ic •c •b V CE >E

U1 3515

Abstract: 2SA1384 2SC3515
Contextual Info: 2SC3515 TOSHIBA 2SC3515 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS 1.6 M AX — CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS 1.7M AX. 0.4 ± 0 .0 5

2SA1384

Abstract: 2SC3515
Contextual Info: 2SC3515 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC3515 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS U M AX. High Voltage : V c b O = 300V> v CEO = 300 v

SC62 marking JB

Abstract: 2SA1384 2SC3515 oc sc62
Contextual Info: TO SH IB A 2SC3515 2SC3515 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS 1 .6 M A X . CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS 1 .7 M A X .

vqe 14 display

Abstract: 2SA1384 2SC3515
Contextual Info: 2SC3515 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC3515 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS High Voltage : V c b O = 300V> v CEO = 300 v