SSM3K Search Results

Contextual Info: SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III SSM3K15AFU Load Switching Applications Unit: mm • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C)

SSM3K126

Contextual Info: SSM3K126TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K126TU Target Specification High-Speed Switching Applications • • 4.0 V drive Low ON-resistance: Unit: mm Ron = 71 mΩ max (@VGS = 4.0 V) Ron = 38 mΩ (max) (@VGS = 10 V) 2.1±0.1

Contextual Info: SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High-Speed Switching Applications Optimum for high-density mounting in small packages Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10

Contextual Info: SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm • 1.8-V drive • Low ON-resistance: RDS ON = 289 mΩ (max) (@VGS = 1.8 V) : RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)

Contextual Info: SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications Unit: mm Ron = 140 mΩ max (@VGS = 1.5 V) Ron = 93 mΩ (max) (@VGS = 1.8 V) Ron = 63 mΩ (max) (@VGS = 2.5 V)

SSM3K320T

Contextual Info: SSM3K320T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K320T High-Speed Switching Applications Unit: mm 4.5 V drive Low ON-resistance : Ron = 77 mΩ (max) (@VGS = 4.5 V) : Ron = 50 mΩ (max) (@VGS = 10 V) +0.2 2.8-0.3 0.4±0.1

SSM3K318T

Contextual Info: SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications +0.2 2.8-0.3 4.5 V drive Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V)

SSM3K302T

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)

SSM3K15FU

Contextual Info: SSM3K15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU High Speed Switching Applications Analog Switch Applications • • Unit: mm Small package Low on resistance : Ron = 4.0 Ω max (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)

SSM3K124TU

Contextual Info: SSM3K124TU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K124TU ○ DC-DC コンバータ ○ 超高速スイッチング 単位: mm 2.1±0.1 • オン抵抗が低い : Ron = 120 mΩ max (@VGS = 4 V) 1.7±0.1 2.0±0.1 : Ron = 83 mΩ (max) (@VGS = 10 V)

SSM3K03TE

Contextual Info: SSM3K03TE 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K03TE ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 1.2±0.05 : Vth = 0.7~1.3 V スイッチング速度が速い。 • 小型パッケージで高密度実装に最適。

SSM3K316T

Contextual Info: SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications • • Unit: mm 1.8-V drive Low ON-resistance: Ron = 131 mΩ max (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V)

SSM3K36FS

Contextual Info: SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS ○ High-Speed Switching Applications Unit: mm • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω max (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V)

SSM3K38MFV

Contextual Info: SSM3K38MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K38MFV ○ High-Speed Switching Applications ○ Analog Switch Applications 1.2±0.05 1 2 0.32±0.05 0.4 0.8±0.05 0.4 0.8±0.05 0.22±0.05 1.2V drive Low ON-resistance : Ron = 20 Ω max (@VGS = 1.2 V)

SSM3K7002F

Abstract: SSM3K7002
Contextual Info: SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Analog Switch Applications Unit: mm +0.5 2.5-0.3 +0.25 1.5-0.15 : Ron = 3.3 Ω max (@VGS = 4.5 V) 2.9±0.2 : Ron = 3.2 Ω (max) (@VGS = 5 V)

SSM3K303T

Contextual Info: SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications • 4 V drive • Low ON-resistance: Unit: mm Ron = 120 mΩ max (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C)

SSM3K15CT

Contextual Info: SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Analog Switch Applications Unit: mm Optimum for high-density mounting in small packages • Low ON-resistance 0.6±0.05 0.5±0.03 : Ron = 4.0 Ω max (@VGS = 4 V)

Contextual Info: SSM3K35CT シリコン N チャネル MOS 形 東芝電界効果トランジスタ SSM3K35CT ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 1.2 V 駆動です。 • オン抵抗が低い : Ron = 20 Ω 最大 (@VGS = 1.2 V)

Contextual Info: SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS ○ High-Speed Switching Applications Unit: mm • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω max (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V)

SSM3K01F

Contextual Info: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)

SSM3K16FV

Contextual Info: SSM3K16FV 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K16FV ○ 高速スイッチング用 ○ アナログスイッチ用 : Ron = 4.0 Ω 最大 (@VGS = 2.5 V) 1.2±0.05 : Ron = 15 Ω (最大) (@VGS = 1.5 V) 絶対最大定格 (Ta = 25°C)

SSM3K7002FU

Abstract: D600500
Contextual Info: SSM3K7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance Unit: mm : Ron = 3.3 Ω max (@VGS = 4.5 V) 2.1± 0.1 : Ron = 3.2 Ω (max) (@VGS = 5 V)

SSM3K7002FU

Abstract: IDG-500
Contextual Info: SSM3K7002FU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K7002FU 高速スイッチング用 アナログスイッチ用 単位: mm 2.1± 0.1 目 記 号 定 格 VDS 60 V ゲ ー ト ・ ソ ー ス 間 電 圧 VGSS ± 20 V DC ID

SSM3K105TU

Contextual Info: SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications Unit: mm Ron = 480mΩ max (@VGS = 3.3V) Ron = 200mΩ (max) (@VGS = 4V) Ron = 110mΩ (max) (@VGS = 10V) 2.1±0.1 Drain-Source voltage Rating