TO9 PACKAGE Search Results

BLW 82

Abstract: p106 P127 transistor p86 DD15 TO13
Contextual Info: VDDE P102/TO10/CTX0 P101/TO9/CRX0 P100/TO8 P117/TO7/TO36/DD4 P116/TO6/TO35/DD5 P115/TO5/TO34/DD6 P114/TO4/TO33/DD7 P113/TO3/TO32/DD8 P112/TO2/TO31/DD9 P111/TO1/TO30/DD10 P110/TO0/TO29/DD11 VSS VCCE FP MOD1 MOD0 RESET# P97/TO20/DD12 P96/TO19/DD13 P95/TO18/RXD5/DD14

P127

Abstract: BLW 82 TO9 package p106 P117 TO8 package BHW 86
Contextual Info: VDDE P102/TO10 P101/TO9 P100/TO8 P117/TO7 P116/TO6 P115/TO5 P114/TO4 P113/TO3 P112/TO2 P111/TO1 P110/TO0 VSS VCCE FP MOD1 MOD0 RESET# P97/TO20 P96/TO19 P95/TO18 P94/TO17 P93/TO16 P77/RTDCLK/CRX1 P76/RTDACK/CTX1 P75/RTDRXD/RXD3 P74/RTDTXD/TXD3 P73/ HACK# P72/HREQ#

BLW 82

Abstract: p106 P127 DD15
Contextual Info: VDDE P102/TO10/CTX0 P101/TO9/CRX0 P100/TO8 P117/TO7/TO36/DD4 P116/TO6/TO35/DD5 P115/TO5/TO34/DD6 P114/TO4/TO33/DD7 P113/TO3/TO32/DD8 P112/TO2/TO31/DD9 P111/TO1/TO30/DD10 P110/TO0/TO29/DD11 VSS VCCE FP MOD1 MOD0 RESET# P97/TO20/DD12 P96/TO19/DD13 P95/TO18/RXD5/DD14

TO9 package

Abstract: LML-785 TO56 package
Contextual Info: VBG -STABILIZED COAXIAL HIGH POWER LASER PACKAGE This data sheet describes wavelength stabilized high power 785nm laser series in a coaxial package with collimated output. It is built utilizing PD-LD’s patented Volume Bragg Grating® VBG® technology.

MPS94

Contextual Info: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO ICBO @> VCB I V I M IN V M IN IV ) M IN (m A I MPS5354 MPS5355 MPS5365 MPS5366 MPS6507 PNP PNP PN P PN P N PN TO-92 TO-92 TO-92 TO-92 TO-92 (72) (72) (72) (72) (721 25 25 40 40 20 25 25 40 40 20 4 4 4 4 3 100 100 100

2N439

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N439 - 2N439A NPN HIGH FREQUENCY COMPUTER TRANSISTORS 2N439 and 2N439A are NPN alloy-junction germanium transistors. Their basic NPN nature (high mobility electron flow) renders

TRIAC TAG 90

Abstract: TRIAC TAG 600 triac TAG TAG 90 2N007 TAG triac tag 6 600 TAG93A TAG A2 TRIAC TAG J
Contextual Info: HM TRiAC IN PLASTIC PACKAGE — f— TO~12t TO-9 2 — 0 ,6 A RMS 30V TAG 9 2 Y TAG 9 3 Y ÍTAG 94Y 2 N 6 0 6 8 3 2N6C 2N6069 .6069B I ! 2N 6C . TAG 92YY TAG 93YY TAG 94YY 100V TAG 94A TAG 93A TAG 96A TAG 97A ; AG J I . i 200V D' «LOCKING VOLTAGE T AG 92B

CSC1674R

Abstract: CD9018G CD9018H CD9018J CD965 CD965P CD965Q CD965R CD965S CDN368
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Po k ^CE ^CE(SAT) (V) 00 c* f, Freq c. (MHz) (PF) Max CDIL Case Style ^C80 ''CEO ^EBO (V) Min (V) Min (V) Min CD9018G 20 12

OM6512SC

Abstract: OM6513SC
Contextual Info: OM6512SC OM6513SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off

385B

Abstract: 385D T-23
Contextual Info: Analog Microelectronics, Inc. Micropower Voltage Reference Diode AME385-2.5 n General Description n Key Features The AME385-2.5 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 20µA to 20mA current range. Each circuit is trimmed at wafer sort to

8065S

Contextual Info: SIPMOS Small-Signal Transistor • • • • • • • BSS 149 Vx 200 V /D 0.35 A ^DS on 3-5 N channel Depletion mode High dynamic resistance Available grouped in Vqs^ Type Ordering Code BSS 149 Q67000-S252 Tape and Reel information Pin Gonfigu ration Marking Package

Contextual Info: TO-92 Plastic Package Transistors PNP M a x im u m R a tin g s Type No. M P S 6533 VCBO (V) Min 40 ^CEO (V) Min 40 ^EBO (V) Min 4 E le c tric a l C h a ra c te ris tic s (Ta=25°C , U n le s s O th e rw is e S p e c ifie d ) PD m 'c . (A) @Tc=25°( 0.625

Contextual Info: SANYO SEMICONDUCTOR IS E D I CORP 7 cn 7 0 ? b OODSISI 2SD1656 NPN Triple Diffused Planar Silicon Transistor 2039 Color TV Horizontal Deflection Output Applications 17548 Applications . High-voltage, power switching Features . Fast speed tfinax=0.4us .

Contextual Info: DFB-2004-3 Description 2.0 m DFB laser diodes in the following a 2004nm device is exemplary presented show unique device performance to meet the requirements of our customers. Their high side mode suppression ratio (SMSR) and high spectral purity make them

Contextual Info: G Ge pn, pin Detectors CAPACITANCE vs. REVERSE BIAS Special Options High response at short wavelength available BNC connectors Thermoelectric coolers Dewars Neutral density filters Reflective filters AR-coated lenses/windows Custom devices including arrays

transistor d 1825 7c

Abstract: BU406
Contextual Info: SANYO SEMI CON DUCTOR CORP IB E D I BU406. 407 Tn?07b D00S4flti T ' 3 3 - / / NPN Epitaxial Planar Silicon Transistors 2010A C R T Horizontal Output Applications 1. Structure: Silicon NPN epitaxial planar transistor 2. Package: JEDEC: TO-220AB 3. Use: CRT display horizontal deflection output

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

Contextual Info: b3E ì> Honeywell 4SS1Ö7E GGD1D17 33Ö H H 0 N 3 HONEYÜIELL/S S E C Advance Information 128K X 32 RADIATION-TOLERANT SRAM HC83241 FEATURES RAD IATIO N OTHER • Total Dose Hardness at Tactical Level • Automatically Detects and Corrects All Single and Double Bit Errors

2sc284

Abstract: 2SC2840 TRANSISTOR sanyo marking 2sc2999 2SC2999 10mmiS sanyo 2033 bc 207 npn
Contextual Info: 12E D I SANYO SEMICONDUCTOR CORP i 2SC2840 T - 3 7 W 0 '? b / - / S 0004103 ' N P N Epitaxial Planar S ilicon Transistor 2033 High Frequency GeneralPurpose Amp Applications 796C Features . FBET series. . Compact package enabling compactness of sets. High f T and small cre f T =600MHz typ, cre=0.5pF typ .

p0107db

Abstract: TRIAC TAG 92 SCR TAG Semiconductors X0101MA P0107AA P0109AA TAG scr P0109DB tag semiconductors triacs RD101
Contextual Info: part Number Definition ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e

scr 6A

Abstract: scr tag 2 200 S1610BM scr tag 12 TAG scr S2510 SCR 10A tag semiconductors triacs S0805BM S0805DM
Contextual Info: part Num ber D efinition ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e

Contextual Info: Ordering number: EN 2 456 No.2456 _ 2SA1436 PNP Epitaxial Planar Silicon Transistor I High-hpE^ AF Amp Applications Applications . AF amp, various drivers, muting circuit Features . Adoption of MBIT process . High DC current gain hpE=500 to 1200

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1500 Watts 1N5908 TRANSIENT VOLTAGE SUPPRESSORS MICROPROCESSOR PROTECTION T 5.0 VOLTS 1500 WATT PEAK POWER 5.0 WATT STEADY STATE 1 0 Min 254

Z0105MA

Abstract: Z0409MF Z0105DA MT2800 Z0405DF GT 60 DIAC Z0102MA Z0405BF z0302mg Z0402DE
Contextual Info: p a rt N u m b e r D e fin itio n ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e