2N172 Search Results

Contextual Info: GENERAL 3 9 1 6 590 ^ Ta SEMICONDUCTOR GENERAL SEMICONDUCTOR A General Semiconductor Industries, Inc • d F J b tiô s td 72C 0 1 9 3 0 D □ □ d i cî 3 0 7 ~ b 33 NPN TRANSISTOR CHIP « 5 Q U B R E TI COMPANY Typical Device Type: 2N1724, 2N5671, 2N5672

IC 4025

Abstract: 2N1724A 2N1724 sf 1012 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487
Contextual Info: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 5TÛ * N E S NPN TO-61 I max = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz See page 13 for isolated collector versions [ Type No. 2N1724 2N1724A 2N1725 2N2811 PNP Comple­ ment VCE (SAT) @ IC/lB

Contextual Info: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

2N1724

Contextual Info: 2N1724+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0

Contextual Info: 2N1728 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20â V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)60m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain. h(FE) Max. Current gain.

2N1724

Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
Contextual Info: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15

2N1722

Abstract: S48SC 2N1724 2N343B
Contextual Info: TYPES 2N1722, 2N1724 N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS 30 09 H m C < HIGH-FREQUENCY POWER TRANSISTORS • 50 Watts at 100*C Case Temperature • Minimum h of 10 Megacyles <r 2 • Maximum Res of 0.5 Ohm at 2 Amperes k • Maximum V b i of 2 Volts at 2 Amperes lc

2N1725

Abstract: 2N1723 diode sg 5 ts
Contextual Info: TYPES 2N1723, 2N1725 N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS IlD H ui C < < r *o —r m High-Frequency Power Transistors w m co Sg s SO Watts at 100°C Case Temperature O Maximum Res of 0.5 Ohm at 2 Amperes U Maximum V be of 2 Volts at 2 Amperes lc

Contextual Info: 1 1 1 ESSOELECTRONICS, INC. PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES ì 1 ] ] ] 1 1 11 1 1 1 fl 1 1 Device No 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719 2N1720 2N1721 2N1B89 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989

Contextual Info: tuff 'j ioaucti, Una. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 TYPES 2N1722A, 2N1724A N-P-N TRIPIE-DIFFUSED MESA SILICON TRANSISTORS • • • • 50 Wafts at 100°C Case Temperature

Contextual Info: TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/ 262 Devices Qualified Level 2N1722 JAN JANTX 2N1724 MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VEBO IC PT 80 175 10 5.0 3.0 50 175 -65 to +200 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage

Contextual Info: 2N1724+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0

2n1724

Abstract: 2N1722 1000C 2N172 to-53
Contextual Info: TECHNICAL DATA 2N1722 JAN, JTX 2N1724 JAN, JTX MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/262 NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1722 / 2N1724 Units VCEO VCBO VEBO IC PT 80 175 10 5.0 3.0 50 175 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage

2N1208 - 2N1212

Contextual Info: <£s.m.i-Cond.u.ctoi ^Pr 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N1618 2N1208 - 2N1212 2N1724 2N1616/A - 2N1617/A 2N2101 POWER TRANSISTORS Sat Test Voltages Conditions PT TYPE @ NO. 25aC

2N1718

Abstract: 2N1720 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717
Contextual Info: Ü J iä ELECTRONICS, INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993

2N1720

Contextual Info: 2N1720 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1720 Availability Online Store

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

TX2N1724

Abstract: 2N1722 2N1724
Contextual Info: MIL-S-19500/262F AMENDMENT 4 21 February 1985 SUTTRSEDTfre AMENDMENT 3 1 N o v e m b e r 198 4 MILITARY SPECIFICATION S E M I C O N D U C T O R D E V I C E , T R A N S I S T O R , N PN, S I L I C O N , H I G H POWER TYPES 2N1722, 2N1722, 2N1724, AND TX 2N 17 24

2N2632

Contextual Info: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60

Contextual Info: Ú j ÍM E LE C T R O N IC S , INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992

Contextual Info: 2N1722+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0

Contextual Info: 2N1722 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0

Contextual Info: 2N1721 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)750m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)200m