2N147 Search Results

Contextual Info: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)

2N3440A

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5

2N1480

Abstract: 2N1482 2N1479 2N1481
Contextual Info: TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/207 Devices 2N1479 Qualified Level 2N1480 2N1481 2N1482 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base-Current

2n1482

Contextual Info: 2N1479 – 2N1482 Qualified Levels: JAN NPN Silicon Power Transistor Available on commercial versions Qualified per MIL-S-19500/207 DESCRIPTION This family of 2N1479 through 2N1482 medium-power, planar transistors are military qualified to the JAN level for high-reliability applications.

AP1131

Abstract: 2N1720 2N1718 2n1482 2N2990 2N1479 2N1480 2N1481 2N1486 2N1700
Contextual Info: 0043592 A P I ELECTRON ICS INC 26C 00217 D _ _P A R A M E T E R T A B L E S A P I ELECTRONICS INC ' 2b dY ^ D O M B S T E □□□□217 E, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No Case v CBO Volts 2N1479 2N1480 2N1486

Contextual Info: 2N1477 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1476 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

JAN2N5339

Abstract: JANTX2N4150 JANS2N3439
Contextual Info: Microsemi NPN Transistors Part Number JANTXV2N3440L 2N3439 2N3439L JAN2N3439 JAN2N3439L JANS2N3439 JANS2N3439S JANTX2N3439 JANTX2N3439L JANTXV2N3439 JANTXV2N3439L 2N1479 2N1481 2N1480 2N1482 2N2890 2N2891 2N4225 2N2983 2N2985 2N2984 2N2986 2N3017 2N4150 2N4150S

2N1480

Abstract: MARKING 333 transistor C200 2N1479 2N1481 2N1482 SMA-KE 434 MARKING
Contextual Info: à ilII _ C _ 1 Û C r t A /'»ftl/'/PI \ m iu - j- i 7JUU/ zu/V-^ELj 9 December 1 9 6 6 bUFfcKbtülNÜ AA II -.ç_io*;nn/on • « '« w v / ¿w7vo/Ei iu k ;\ 13 OrfntiAr 1 9 AA MILITARY SPECIFICATIO N TRANSISTOR, N PN , SILIC O N TYPES 2N1479, 2N 1480,2N 1481,2N 1482

AP1131

Abstract: 2N1479 2N1480 2N1481 2N1486 2N1700 2N2102 AP1125 AP1127 AP1128
Contextual Info: 0043592 A P I ELECTRONICS INC _ _ _ P A R A M E T E R T A B L E S A P I EL ECTRONICS INC 2b 26C 00217 D lT | 0 0 4 3 5 ^ D 7": 3> J - o / □□□0217 L, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No 2N1479 2N1480 2N1486 2N1700

Contextual Info: 2N1474A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1473 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)40 I(C) Max. (A)400m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.

Contextual Info: 2N1475 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1482

Abstract: 2N1479 2N1480 2N1481
Contextual Info: TECHNICAL DATA 2N1479 JAN, JTX, JTXV 2N1480 JAN, JTX, JTXV 2N1481 JAN, JTX, JTXV 2N1482 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/207 NPN SILICON MEDIUM-POWER TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

2N1720

Abstract: 2N1479 2N1480 2N1481 2N1486 2N1700 2N2102 AP1125 AP1127 AP1128
Contextual Info: 0043592 A P I ELECTRONICS INC 26 C _ _P A R A M E T E R T A B L E S A P I ELECTRONICS INC ' 2b 00217 dY ^ D O M B S T E D □□□□217 E, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No Case v CBO Volts 2N1479 2N1480 2N1486

2N4355

Abstract: KT209 BCY29 2SA546 LOW-POWER SILICON PNP 2N1475 KT209M
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 15 20 25 30 35 40 45 50 2N1474 BCY11S 2N1232 2N927 BCZ12 2N2595 2N2S01 2S301 2N1474A ST8509 KT209L KT501L BC143 BC343 BC287 BCY29 BCY29 PN4354 2N4354 2N3072 2N3073 ESMS38 2SA546 2N4030 BFR80 SHA7538 2N1233

Contextual Info: 2N1479 Si NPN Power BJT 14.77 Transistors Transistors Bipolar Si NPN Power Transist. Page 1 of 1 Enter Your Part # Home Part Number: 2N1479 Online Store 2N1479 Diodes Si NPN Power BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: I max = 0 .0 5 to lO A V cE O (SU S) = 4 0 -8 0 0 V fi = I to 5 0 MHz NPN TG-39/TO-5 Case 801 PNP Com ple­ ment PO @ VCEO (SUS) 1C (MAX) w w 2N1479 40 1.5 20-60@.2/4 1.4 . 21.02 3@.2/4 .25@ 60 5 150 1.5 2N1480 55 1.5 20-60@.2/4 1.4®.2/.02 3®.2/4 .25® 100

2n1701

Abstract: 2N2035
Contextual Info: POWER TRANSISTORS TYPE NO TO-5 PT MAXIMUM RATINGS @ 25°C •ü'ÆÜl f:fKT51 l:WT51 Ic A V V V Watts 2N1116 .6 60 60 2N1117 60 60 2N1479 .6 5.0 60 40 2N1480 5.0 100 55 2N1481 5.0 60 2N1482 5.0 2N1700 6 I Hfe , A V V ce V VB£ V Ic MIN MAX Sat Voltages <iD

Contextual Info: 2N1478 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)15 h(FE) Min. Current gain.40 h(FE) Max. Current gain.70Â

Contextual Info: 2N1471 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)12 I(C) Max. (A)200m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)7.0 h(FE) Min. Current gain. h(FE) Max. Current gain.

2H2904

Abstract: 2NI483-86
Contextual Info: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879

2N1482

Abstract: 2N1479 GG1C
Contextual Info: i ~ 3 3 -Q 5 - cq Power Transistors 2N1479, 2N1480, 2N1481, 2N1482 HARRI S S E M I C O N D S E C T O R File Number 27E D • 43D2271 135 G G 1 C1772 T ■ HAS Silicon N-P-N Power Transistors G e n e ra l-P u rp o s e T yp e s fo r M e d iu m -P o w e r A p p lic a tio n s