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    GB200 Search Results

    GB200 Datasheets (13)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    GB200
    Microsemi SCR Nanosecond Switching, Planar Scan PDF 136.6KB 3
    GB200
    Microsemi SCRs Nanosecond Switching Planar Scan PDF 136.6KB 3
    GB200
    Unknown Short Form Datasheet and Cross Reference Data Short Form PDF 166.44KB 1
    GB200
    Unknown Short Form Datasheet and Cross Reference Data Short Form PDF 90.98KB 1
    GB200
    Unitrode International Semiconductor Data Book 1981 Scan PDF 118.24KB 3
    GB2000025
    Diodes Incorporated CRYSTAL 20.0000MHZ 15PF Original PDF 142.75KB
    GB2000033
    Diodes Incorporated CRYSTAL 20.0000MHZ 18PF Original PDF 142.75KB
    GB2000039
    Diodes Incorporated CRYSTAL 20.0000MHZ 20PF Original PDF 142.75KB
    GB200A
    Microsemi SCR Nanosecond Switching, Planar Scan PDF 136.6KB 3
    GB200A
    Microsemi SCRs Nanosecond Switching Planar Scan PDF 136.6KB 3
    GB200A
    Unknown Short Form Datasheet and Cross Reference Data Short Form PDF 166.44KB 1
    GB200A
    Unknown Short Form Datasheet and Cross Reference Data Short Form PDF 90.98KB 1
    GB200A
    Unitrode International Semiconductor Data Book 1981 Scan PDF 118.25KB 3
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    GB200 Price and Stock

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    TE Connectivity FN2091GB-20-06

    FN2091GB-20-06 MOQ Reduction
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    Master Electronics FN2091GB-20-06
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    Thomas & Betts DIGB-200

    2 Inch - Insulated Grounding Bushing - Die Cast Zinc - 105 Degree C - Thermoplastic Liner.
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    Master Electronics DIGB-200
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    Vishay Intertechnologies CMB02070X1000GB200

    Surface Mount MELF Resistor, 100 ohm, CMB Series, 500 V, Carbon Film, 400 mW, ? 2% - Tape and Reel (Alt: CMB02070X1000GB200)
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    Avnet Americas CMB02070X1000GB200 Tape & Reel 18,000 30 Weeks 2,000
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    Newark () CMB02070X1000GB200 Tape & Reel 51,208 100
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    CMB02070X1000GB200 Cut Tape 51,208 5
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    CMB02070X1000GB200 Cut Tape 2,000 2,000
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    TTI CMB02070X1000GB200 Reel 336,000 2,000
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    ComSIT USA CMB02070X1000GB200 1,805
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    Chip 1 Exchange CMB02070X1000GB200 2,538
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    Wuhan P&S CMB02070X1000GB200 4,000 1
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    Vishay Intertechnologies CMB02070X1200GB200

    CMB 0207 2% B2 120R - Tape and Reel (Alt: CMB02070X1200GB200)
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    Avnet Americas CMB02070X1200GB200 Tape & Reel 2,000 30 Weeks 2,000
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    TTI CMB02070X1200GB200 Reel 2,000
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    Rutronik CMB02070X1200GB200 Tape & Reel 2,000 2,000
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    Vishay Intertechnologies CMB02070X5101GB200

    CMB 0207 2% B2 5K1 - Tape and Reel (Alt: CMB02070X5101GB200)
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    Avnet Americas CMB02070X5101GB200 Tape & Reel 2,000 30 Weeks 2,000
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    GB200 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GA201

    Abstract: GA201A GA200 GA200A GB200 GB200A GB201 GB201A GR201A
    Contextual Info: GA200 GA200A GA201 GA201A SCRs Nanosecond Switching, Planar FEATURES • Rise Time; 10ns • Delay Time: 10ns • Recovery Time: 0.5 /is • Pulse Current: to 100A GB200 GB200A GB201 GB201A DESCRIPTION The Mlcroseml Nanosecond Thyristor Switch combines the turnon speed of logic level


    OCR Scan
    ga200gb200ga200agb200a+6ga201gb201ga201agb201aga/gb200gr201a PDF

    Contextual Info: VS-GB200TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses


    Original
    vs-gb200th120u2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE on SPT+ IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C


    Original
    vs-gb200th120n2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    fast diode for welder application

    Contextual Info: VS-GB200TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses


    Original
    vs-gb200th120u2002/95/ec2011/65/eujs709a+202-oct-12fast diode for welder application PDF

    Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original
    gb200ts60npbfe789962002/95/ec11-mar-11 PDF

    Contextual Info: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half Bridge” Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 s short circuit capability


    Original
    vs-gb200ts60npbfe789962002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE on SPT+ IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C


    Original
    vs-gb200th120n2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original
    gb200ts60npbfe789962002/95/ec2011/65/eu+112-mar-12 PDF

    1853G

    Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability


    Original
    gb200ts60npbf18-jul-081853g PDF

    Contextual Info: VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original
    vs-gb200lh120n2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original
    vs-gb200nh120n2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Sfor1b42

    Abstract: 2SF102B CW12B 2N50S1 E0102FB FBase-F Package SFOR3B
    Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 25 30 35 40 45 50 55 2N88S 2N4333 2N5724 GA10l GA200 GA200A GB200 GB200A AAl00 AA107 2N3031 AA114 2N3028 MCR203 E0100FD E0102FA E0102FB E0102FD 10101 MMBS50S1 BRX45 BRX45 C203YY SlYY BRY55-S0 BRY55SS0


    Original
    2n88s2n43332n5724ga10l+13ga200ga200agb200gb200aaal00aa107sfor1b422sf102bcw12b2n50s1e0102fbfbase-f packagesfor3b PDF

    Contextual Info: VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original
    vs-gb200lh120n2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original
    vs-gb200nh120n2011/65/eu2002/95/ec12-mar-12 PDF

    w438

    Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability


    Original
    gb200ts60npbf18-jul-08w438 PDF

    Contextual Info: VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original
    vs-gb200lh120n2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE on SPT+ IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C


    Original
    vs-gb200th120n2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original
    gb200ts60npbfe789962002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original
    vs-gb200ts60npbfe789962002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original
    vs-gb200nh120n2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    GB200TS60NPBF

    Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAKTM "Half-Bridge" Ultrafast Speed IGBT , 200 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Low VCE(on) COMPLIANT • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient


    Original
    gb200ts60npbf12-mar-07 PDF

    GB200TS60

    Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original
    gb200ts60npbfe789962002/95/ec11-mar-11+1gb200ts60 PDF

    GB200TS60N

    Abstract: GB200TS60NPBF DC-209 E78996 datasheet bridge
    Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original
    gb200ts60npbfe789962002/95/ec18-jul-08+3gb200ts60ndc-209e78996 datasheet bridge PDF

    GA201

    Abstract: GB201 lcle 10 100S GA200 GA200A GA201A GB200 GB200A GB201A
    Contextual Info: SCRs GA200 GA200A GA201 GA201A Nanosecond Switching, Planar GB200 GB200A GB201 GB201A FEATU RES D ESCR IPTIO N • • • • • The Unitrode Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current sw itching capability inherent in SCRs. With


    OCR Scan
    ga200gb200ga200agb200a+7ga201gb201ga201agb201aga/gb200lcle 10100s PDF