2N504 Search Results

2N5042

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 873 378-2922 (212) 227-6006 FAX-(973) 376-8960 2N5042 PNP HIGH CURRENT AMPLIFIER i EXCELLENT BETA LINEARITY -• - r -*-t~ = 0.75 (fflln.) " • LOW SATURATION VOLTAGE - - Vc|(sal) = 0.15 (typ.) @ »c = 1.0 A/ 1, = 33 mA

2N5045

Abstract: 2N5046 2N5047
Contextual Info: TYPES 2N5045. 2N5046, 2N5047 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . O L -S 7 2 1 1 6 9 5 , M A R C H 1 9 7 2 MATCHED FIELD-EFFECT TRANSISTORS High |y fs |/C jSs Ratio High-Frequency Figure-of-Merit Low Input Capacitance Cj$$ . . . 8 pF Max

2N5045

Abstract: 2N5046 2N5047
Contextual Info: designed for 2N 5047 Silicon ix . Performance Curves NNR See Section 5 • High Gain Differential Amplifiers BEN EFITS • Minimum System Error and Calibra­ tion 5 m V Offset Maximum 2N5Ö45 2N5045 2N5046 a monolithic dual n-channel JFETs • Low D rift

Contextual Info: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152

2N5225

Abstract: 2N5815 2N5816 2n5814 2N5822 2N5420 2N5042
Contextual Info: Medium Power Amplifiers and Switches M AXIMUM RATINGS TYPE NO. POLA­ CASE RITY H FE VcE sat VcEO Pd Ic (mW) (A) (V) VcER * min max Ic ^C E max (mA) (V) (V) (A) Ic fT C 0b min max (MHz) (MHz) COMPLE­ MENTARY TYPE 2N5042 2N5220 2N5221 2N5225 2N5226 P N P

2N3920

Abstract: 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
Contextual Info: 0043592 A P I ELECTRONICS INC_ A P I ELECTRONICS INC 2^ 26f nn?*n n— DE | DDMBSTS 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048

jfet selector guide

Abstract: T0-220SM
Contextual Info: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763

2N3920

Abstract: TO61 2N5330 2N5542 2N2812 2N3919 2N5049 2N5083 2N5084 2N5313
Contextual Info: 8134693 S E M ICOA 40 dF | G00D1E7 S NPN SILIC O N POW ER T R A N SIS T O R S C o n t’d M axim um R a tin gs D e vic e Typ e N o . NPN 2N5049 2N3919 2N3920 2N5083 2N5084 2N2.811 2N2812 2H5317 2N5313 2N5552 2N561C 2N5085 2N5329 2K5659 2R2813 2N2814 2N5658

2N5045

Abstract: 2N5047 2N3921-2 2N4084-5 2N5045-7 2N5046 J401 U401-6
Contextual Info: designed for 2N 5047 a Siliconix . Performance Curves NNR See Section 5 • High Gain Differential Amplifiers BEN EFITS • Minimum System Error and Calibra­ tion 5 m V Offset Maximum 2N5Ö45 2N5045 2N5046 monolithic dual n-channel JFETs • Low D rift

JANTX2N5157

Abstract: 2N3445
Contextual Info: Microsemi NPN Transistors Part Number 2N6316 2N3788 2N5838 2N5839 2N5840 JANTXV2N3902 2N3902 JAN2N3902 JANTX2N3902 2N5157 JAN2N5157 JANTX2N5157 JANTXV2N5157 2N5240 2N6542 2N6543 2N5049 2N5006 2NS008 2N5048 JANS2N5239 2N6563 2N6562 2N6569 2N5412 2N3597 2N3598

2N3920

Abstract: 2N5330 TO61 2N2811 2N2812 2N3919 2N5049 2N5083 2N5084 2N5313
Contextual Info: 8134693 SEMICOA 4Q dF | ä l B 4 b c13 QQ001S7 S | _ ' P <27-C>» NPN SILICON POWER TRANSISTORS C ont’d Electrical Characteristics @ 2 5 °C Maximum Ratings Device Type N o . NPN 2N5049 2N3919 2N3920 2N5083 2N5084 2N2811 2N2812 2N5317 2N5313 2N5552 2N561C

2N3184

Abstract: 2N3185 2N3186 2N3195 2N3196 2N3198
Contextual Info: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152

u233

Abstract: 2N5454 UC2138 2N3457 2N5906 2N5908 2N6483 2N5515 uc2147 2N3954
Contextual Info: Type Case Geometry Number Style 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3457 2N3958 2N4082 2N4083 2N4084 2N4085 2N5045 2N5046 2N5047 2N5196 2N5197 2N5198 2N5199 2N5452 2N5453 2N5454 2N5515 2N5516 2N5517 2N5518 2N5519 2N5520 2N5521 2N5522 TO71

Contextual Info: N-Channel Dual JFET Transistors VP Part No. Min. V Max. (V) VP Gfs VGS1-2 VOS Drift ∆VGS Max. Max. Min. Max. (mmho) (mmho) (mV) (µV/C) Gfs VGS1-2 VOS Drift ∆VGS IDSS Match Gfs Match Package % IDSS % Gfs Bulk 2N5045 2N5197 2N5564 2N5565 0.5 0.7 0.5 0.5

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

10J2

Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
Contextual Info: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple­ ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A

TO111

Abstract: TO61 U 114
Contextual Info: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Q2T2905

Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
Contextual Info: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*

2N2398

Abstract: 2N1745 2N1300 2N1748A 2N2360 2N1728 2n1749 2N2362 2N128 2N1742
Contextual Info: SPRAGUE M A D T , M A T R, and SBT Germanium Transistors MADT PNP GERMANIUM TIANSISTORS FOR COMMUNICATION APPLIOWONS C H A R A C T E R I S T IC S J u n c tio n M a x. M in M in . •CBO T yp. Cob r b 'C c PG @ m A h FE (p F ) (p se c ) Lax (M H z ) M A X I M U M R A T IN G S

2N2090

Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

2N3819 equivalent

Abstract: MPF111 2N3821-4 2N5045 2N3819 2N3921-2 2N4220-2 2N4223-24 2N5457-9 2N5556-58
Contextual Info: designed fo r B . S ilic o n ix Performance Curves NRL See Section 5 • G eneral Purpose Am plifiers MPF109 n-channel JFET B E N E F IT S • Low Cost ■ Analog Switches • Autom atic Insertion Package TO -92 See Section 7 A B S O L U T E M AXIM UM R A T IN G S 25°C

2N5815

Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50