BFR16 Search Results

BFR16

Abstract: Transistor BFr 99
Contextual Info: SILICON PLANAR NPN BFR16 LO W -LE V EL, LOW-NOISE HIGH G AIN A M P LIFIE R The BFR 16 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal-case designed for use in high performance, low-level, low-noise amplifier applications. ABSOLUTE M A X IM U M RATINGS

2SC1844P

Abstract: PA6014b SO80G 2SC2784F 2SC100 LOW-POWER SILICON NPN 2sc1844-f 2sc1844 2SC1844F
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 BFR16 MPS2484 2N5961 2N6224 TP5961 TP6224 2S0763 2S0974 BC141-25 BC141-25 t"AbU;J4-10 2N2462 2N2466 BC431-1S 2SC1008 2SC1008 2SC1008 BC487B BC487B18 BC487B5 ~¥~J~lU 25 30 BSX63-1S BSX63-1S EN870 MMCM2484

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2N6432

Abstract: 2N5183 2N6430 2N6431 2N6433 BC110 BC393 BC394 BC477 BCX22
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION 2NS183 NPN AMPUSW ITCH 2N6430 NPN HIGH VOLTAGE 2N6431 NPN HIGH VOLTAGE BVCBO BVCEO bvebo ICBO (V) on (V) (HA) MIN MIN MIN MAX *ICES *ICEV 18 18 7.0 0.5 200 200 6.0 300 300 6.0 @ lc h FE

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2n5183

Abstract: BSV68 2N6432 2N6430 2N6431 2N6433 BC110 BC393 BC394 BC477
Contextual Info: Small Signal Transistors TO-18 Case Continued D E S C R IP T IO N T Y P E NO. (V) 2N5183 NPN AMPUSWITCH (V) (V) <|lA) MIN M IN M IN MAX •IC E S *IC E V 18 18 7.0 0.5 le hFE BVCBO BVCEO BVEBO C BO @ VCBO (mA) (V) 12 M IN MAX 75 400 @ V C E V C E (S A T ) 1C C o b

2n5183

Abstract: BC187 Small Signal Transistors TO-18 Case
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

2n744

Abstract: LM3661TL-1.40
Contextual Info: Small signal Transistors TO-18 Case T Y P E NO. DESC RIPTIO N 00 V (V) (HA) MIN MIN MIN MAX *IC ES " IC E V @ 1C @ V C E V C E(SAT ) @ «C Cob hFE B V C B O B V C EO B V e b O C B O * V C B O <raA) (V) MIN M AX (V) (V) (mA) (PF) M AX M AX ton toff (ns) IT

2N3014 TO-18

Abstract: 2N2539 2N3829 2n4014 datasheet BC477 2N718A BSV68 30-40-500 BC187 BC477 equivalent
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

BC187

Abstract: AMPL BSV68 BSX19 equivalent 2N5183 2N6430 2N6431 2N6432 2N6433 BC110
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ µA) (V) (V) (V) (µ MIN MIN MIN VCB (V) MAX hFE MIN @ IC @ VCE VCE (SAT) @ IC (mA) (V) (V) (mA) MAX MAX COB fT NF (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

LM3661TL-1.40

Abstract: BSX20 2N719A
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

BSX21

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO bvebo !CBO Ct VCBO (V) (V) (V) (HA) MIN MW MM MAX 'ICES *'ICEV h RE @ lc (mA) (V) MIN 0 VCE VCE(S/V T )0 » c Cob (V) MAX 00 (mA) MAX fr NF ton toff <PF) (MHZ) (dB) (ns) (ns)

Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO bvebo h FE ICBO @ VCBO V (V) (V) (|iA) MIN MIN MIN MAX ICES "ICEV @ic (itlA) (V) NF ton toff (PF) (MHZ) (dB) (ns) (ns) @ VCE VCE(SA T) @ IC Cob (V) MIN MAX 00 (ItlA) MAX MAX it MIN MAX MAX MAX

BF907

Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

TYN 208 equivalent

Abstract: bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent
Contextual Info: Index/Cross R e fe re n ce Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page 1N 34A 118 1N2977B 128 1N3320B 128 1N 60 118 1N2978B 128 1N3321B 128 1N 67 A

BRX49 equivalent

Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
Contextual Info: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number