2SC100 Search Results

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

2SC1222

Abstract: TO-92B 2SC1000 2SC1330 2SC923 2SC1328 2SC1327 2SC1213A 2SC1675 2SC858
Contextual Info: NO. UJ Li. X TYPE P O LA R ITY Low Level and General Purpose Amplifiers MAXIMUM RATINGS CASE Pd mW 'c (mA) V CEO (V) V CE(SAT) 'c min max (mA) VCE (V) max 'c (V) (mA) Cob N.F. max max (MHz) (pF) (dB) 4 20 15 10 fT min 2SC858 2SC900 2SC923 2SC945 2SC1000

transistor C1000 Toshiba

Abstract: 2sc1000 transistor 2SC 536 C1000BL 2SA493 C1000-BL transistor C1000 Y transistor C1000 V536 2SC100
Contextual Info: 5 /U D > N P N X ^ iF 2 /? J W B h 5 > 5 ? ^ P C T Ä 3 S SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS). ° Low N o ise Audio A m p lifie r A p p lic a tio n s . • l i E 2SC1000 G INDUSTRIAL APPLICATIONS T t : # /Jv •$ V * : v 0E 0 = 50V NF = SdB •

transistor c1008

Abstract: c1008 transistor 2SC1008 C1008 Y npn transistor c1008 2SC1008Y 2SC1008-O TRANSISTOR 2sc1008 npn c1008
Contextual Info: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR（NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W（Tamb=25℃） Collector current ICM : 0.7 A Collector-base voltage V BR CBO : 80

TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N

2SC1008

Abstract: TRANSISTOR 2sc1008 st2sc1008 ic CD4081 pin diagram datasheet
Contextual Info: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be

2SC1008

Contextual Info: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be

2SC1001

Abstract: IC 7433
Contextual Info: Sb TOSHIBA {DISCRETE/OPTO! 909 7250 TOSHIBA D E | T [ n 7 2 S 0 00074 35 t> | 56C <DI S C R E T E /O P T O 0 T - 3 h a. 07432 2SC1001 S IL IC O N NPN E P IT A X IA L P L A N A R TYPE_ Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. 0 9 . 3 9 MAX.

2SC1008

Abstract: 2SC1008 equivalent TRANSISTOR 2sc1008
Contextual Info: 2SC1008 2SC1008 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.8 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃

2SC1008

Abstract: TRANSISTOR 2sc1008
Contextual Info: PST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be

transistor c1008

Abstract: c1008 transistor npn transistor c1008 2sc1008 C1008 Y TRANSISTOR 2sc1008
Contextual Info: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213

2SC1009A

Abstract: CIL 108
Contextual Info: SILICON TRANSISTOR ELECTRON DEVICE 2SC1009A F M /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f j = 250 MHz TYP. 2.8 ± 0.2 • Low Output Capacitance: CQb = 1.8 pF TYP.

2SC3735

Abstract: 1SS153
Contextual Info: Q U ICK REFERENCE GUIDE 3 TABLE OF SAME CH ARACTERISTICS IN DEFERENT PACKAGES 3 PIN SU P E R M IN I M O L D (FIG. 6) 3 PIN M IN I M O L D (FIG 4} FM /A M M IX ./ O SC / IF 2SC4179 2SC1009A AF A M P 2SA1611 2SA812 2SA1612 2SA811A A P P LIC A T IO N Driver, Output

2SC1004

Contextual Info: SavantIC Semiconductor Product Specification 2SC1004 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in horizontal deflection output stages for color TV receives. PINNING see fig.2 PIN DESCRIPTION

2SC1008

Contextual Info: 东莞市华远电子有限公 司 DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR（NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W（Tamb=25℃）

2sc1175

Abstract: 2sc100b 2SC959N 2SC1346 2SC938 2SC959 2SD471 92PU01A 92PU02 92PU45
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M RATING S H P O L A R IT Y TYPE CASE 2SC934 2SC938 2SC959 2SC1008 N N N N TO-92B TO-92B TO-39 TO-39 300 250 700 800 0.3 0.2 0.7 0.7 15 60 80 60 40 50 40 80 560# 232# 200# 240# 20 50 200 50 5 1 5 2 0.5 2 0.7

2SC1008

Abstract: 2SC1008 equivalent TRANSISTOR 2sc1008
Contextual Info: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package

2SC1008

Abstract: TRANSISTOR 2sc1008 NPN transistor 500ma TO-92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.8 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.7 A Collector-base voltage 80

Contextual Info: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • NPN Silicon Epitaxial Transistor Lead Free Finish/RoHS Compliant "P" Suffix designates

transistor c1008

Abstract: c1008 transistor 2SC1008 C1008 Y npn transistor c1008 npn c1008 2SC1008Y 2SC1008-Y
Contextual Info: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • NPN Silicon Epitaxial Transistor Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: SILICON TRANSISTOR 2SC1009A F M /A M RF AMPLIFIER. M IXER, OSCILLATOR. CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Gain Bandwidth Product: f j » 250 MHz TYP. 2 .e ± 0 -2 • Low Output Capacitance: C0b = 1.0 pF TYP.

2SC1008

Abstract: 2SC1008Y TRANSISTOR 2sc1008 2SC1008-Y 2SC1008 equivalent 2sc1008y transistor 2SC1008G 2SC1008-G
Contextual Info: 2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 General Purpose Switching and Amplification. G H Emitter Base Collector