2N165 Search Results

Contextual Info: 2N1654 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)5.0m

Contextual Info: Ic = 3.0 AMPS DEVICE TYPE PACKAGE 2N1647 2N1648 2N1649 2N1650 T O -111 TO-111 TO-111 TO-111 80 80 80 80 80 120 80 120 6.0 6.0 6.0 6.0 20.0 20.0 20.0 20.0 15 15 30 30 - 45 45 90 90 0.5 0.5 0.5 0.5 10.0 10.0 10.0 10.0 1.2 1.2 1.2 1.2 1.0 1.0 1.0 1.0 0.1 0.1

pnp germanium to36

Abstract: MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 2N2728 TO36 package germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C - -10 6~~~ - MP110B 2N1166 2N1167 SDG606 MP1077 2N1166A 2N1167A 2N575 15 20 - ~~:gA 25 30 2N575A 2N514A NKT501 NKT503 2N1519 ADY26 ADY26 COTt076 ~~~g~~ -35 40 2N2638 CTP3545 MP2100A MP2100A MP2100B SOO607 2N1652

Contextual Info: 2N1655 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)125 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)5.0m

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL TS S E MI CON DU CT OR DE^BilflSiD 95D 02091 7133-07 -r-'ìò-ch Ic = 3.0 AMPS DEVICE TYPE BVce0 PACKAGE VOUS 2N1647 2N1648 2N1649 2N1650 2N2101 TO-111 TO-111 TO-111 TO-111 TO-61 T0-5/S TO-5 T0-5/S TO-5 TO-59 T0-5/S TO-5

2N2828

Abstract: 2N2829 2N2828 - 2N2829
Contextual Info: , Jna. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N1647 - 2N1650 2N1886 2N2828 - 2N2829 TYPE NO. PT MAXIMUM RATINGS @ Ic 25°C BVceo BVCEO BVEBO A V V V Watts 2N1647 40 80 60 6 3 HFE

TIP310

Abstract: B0939 B0941 D510 B0581
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 2N6417 2SC3567L 2S036 2SC3567K BUW64B BUW64B BUW64B B02410 2Nl648 BOT290F 40912 2N6263 2N2984 BOT31DF TIP310 2N1650 B0941 B0941 50 tsU~41 ~emel~D PhilipsElec AmperexElec See Index Fujitsu Ltd

2N2636

Abstract: 2N4048 2N2152 TO41 TO36 2N2287 2N1162A 2N1163A 2N1164 2N1165
Contextual Info: G E R M A N I U M POWE R D E V I C E S b3E D • 3 T 4 7 37 S 0 0 G D S 6 3 1EG ■ ¿ P D GERMANIUM POWER TRANSISTORS Type Number y cey o Case Type Y CBO 2N1162A 2N1163 2N1163A 2N1164 2N1164A 2N1165 2N1165A 2N1166 2N1166A 2N1167 2N1167A 2N1651 2N1652 2N1653

2N4078

Abstract: 2n1649 2N2885 2n2888 2N5076 2N1648 2N1650 2N2101 2N2849-1 2N2850-2
Contextual Info: SÛUARE D CO/ GENERAL 3918590 flSSSSDfl üüaSGTl 1 GENERAL SEMICONDUCTOR 95D 02091 lr *2 - n •T -Z >b 'C f\ W DEVICE TYPE BVcEO PACKAGE VOUS 2N1647 2N1648 2N1649 2N1650 2N2101 2N2849 2N2849-1 2N2SS0 2N2850*1 2N2B50-2 TO-111 TO-111 TO-111 TO-111 TO-61 T0-5/S

2N1652

Abstract: 2N1653 MIL-STD-780 2N1651 Germanium power
Contextual Info: MIL-S-19500/219A EL a annrr ioaq û A r UlU itruu jTTn’n ner'nrw^u OU MIL-S-19500/219(SigC) 21 NOVEMBER 1961 SPECIFICATION TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING TYPES 2N1651, 2N1Ö52, 2N1653 QOW m np lu î.î Scope. This spécification covers the de­

Contextual Info: 2N1651 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)25 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)110õ I(CBO) Max. (A)300u @V(CBO) (V) (Test Condition)2.0 V(CE)sat Max. (V).65 @I(C) (A) (Test Condition)25

Contextual Info: 2N1657 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.5m @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)4.5 @I(C) (A) (Test Condition)850m

2N424

Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
Contextual Info: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BLY25

Abstract: BLY26 CP430 B3631 2SC736 B145013 BUY14 B3547 T0111
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2N1620

Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068
Contextual Info: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2

2SA850

Abstract: 2N2216 2N5400 MOTOROLA 2N3064 2SB646A 25M SOT89 motorola bc450 15J1A LOW-POWER SILICON PNP KT214A
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 -15 20 >= NthAmerSemi NthAmerSemi See Index SGS-Ates Hybrid Semi SGS-Ates Semelab Semelab See Index ~~~~~~ Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Semicoa NthAmerSemi Space Power

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

2SD1039

Abstract: to-53 BUW64A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

2N1855

Abstract: 0E-18 2N1025 2n936
Contextual Info: jo m itr o n io r s e m ic o n d u c t o r s s s Sem itronics Corp. silicon transistors silicon small signal transistors general purpose — alloy Typ« Polarity Power Dissipation @ 25°C mW (°C) BV c b o (volts) 2N3298 2N330A 2N923 2N924 2N925 2N926 2N927