pnp germanium to36
Abstract: MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 2N2728 TO36 package germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C - -10 6~~~ - MP110B 2N1166 2N1167 SDG606 MP1077 2N1166A 2N1167A 2N575 15 20 - ~~:gA 25 30 2N575A 2N514A NKT501 NKT503 2N1519 ADY26 ADY26 COTt076 ~~~g~~ -35 40 2N2638 CTP3545 MP2100A MP2100A MP2100B SOO607 2N1652
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2n2728mp23572n23572n1522+112n1523mp2358pnp germanium to36mp2400b2n575a2n56942n21562n5752n1518to36 packagegermanium
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2N2636
Abstract: 2N4048 2N2152 TO41 TO36 2N2287 2N1162A 2N1163A 2N1164 2N1165
Contextual Info: G E R M A N I U M POWE R D E V I C E S b3E D • 3 T 4 7 37 S 0 0 G D S 6 3 1EG ■ ¿ P D GERMANIUM POWER TRANSISTORS Type Number y cey o Case Type Y CBO 2N1162A 2N1163 2N1163A 2N1164 2N1164A 2N1165 2N1165A 2N1166 2N1166A 2N1167 2N1167A 2N1651 2N1652 2N1653
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3t4737s00gds632n1162a2n1163+112n1163a2n11642n1164a2n11652n1165a2n40482n26362n2152to41to362n2287
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2N1674
Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
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mps5858bfr50tipp31bst4341+14bsw652n15722n7382n25172n7552n1674emihus2n1605abc4472n17242n28912n1666bsw392n1664
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2g1012g1022g1032g109+152g2202g2212g2222g2232g2242n1892n1136b2n420b1151 equivalent2sa114oc592t3122t203sft1252n1152
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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transistor 2n4st25c transistor2n407 transistor2sa114+6tfk 808transistor 2sc124sf1222ge2 transistortfk 877tfk 748
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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3N50
Abstract: 2N1167A 2N2081 SDG603 2N2078 2N2286 2N2285 2N2287 2N2636 2N511
Contextual Info: 57 GERMANIUM POWER TRANSISTORS SA T U R A T IO r vl V O L T A G E S CURREIV IT G A IN @ T Y PE N U M B ER C ASE TYPE V CBO V V CEO V V EBO v V C ER V V C ES V hl:E MIN. M AX. V CE V I *C A V CE s V BE(s) V I V 'C A I >B A 15 AMP GE 3MAIM UM PIMP Observe (—) Negative Polarity
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2n20772n20782n20792n2080+112n20822n26123n502n1167a2n2081sdg6032n22862n22852n22872n26362n511
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2n2153
Abstract: 2N2152 2N1522 TO41 germanium power transistors TO36 germanium PNP 2N1167 2N2287 2N1163
Contextual Info: GERMANIUM POWER TRANSISTORS CURRENT G A IN Type Number Case Type YCBO V V e to V V,.o V V c t, V Vca V h FE Min. YcE Max. V Ic A SA TVRA TION VOL TA GES Yc£Ij Y 11f . . / c @ Ib V V A A 0,-C "C /W 25 AMP GERMANIUM PNP Cont.) 2NI162A 2N1163 2N1163A 2N1164
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2n1162a2n11632n1163a2n1164+152n1164a2n11652n1165a2n11662n11t-368-32nc-2a2n21532n21522n1522to41germanium power transistorsto36germanium pnp2n11672n2287
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N2147
Abstract: 2N2075 2N2148 2N2160 2N1545 2N1924 2n2222 book TRANSISTOR 2N2222 2N2016 2N2219 transistor
Contextual Info: DIGITRON ELECTRONIC CORP 3LE D • 2045^07 DOOOODM 0 ■ DGE ' 2 ^} ~ 0 \ Page #4 DIQITRON ELECTRONIC CORF 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. J O H N J. SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , CORP ,
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2n1542a2n15992n1671a2n1811+162n2077a2n2192b2n15432n16062n1671b2n18122n21472n20752n21482n21602n15452n19242n2222book transistor 2n22222n20162n2219 transistor
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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2N2148
Abstract: 2N2148 transistor 2N2147 2n2222 2N1545 2N2160 2N1906 transistor 2N2147 transistor 2n1906 2N1924
Contextual Info: DIGITRON ELECTRONIC CORP 3LE D • 2045^07 DOOOODM 0 ■ DGE ' 2 ^} ~ 0 \ Page #4 DIQITRON ELECTRONIC CORF 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. J O H N J. SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , CORP ,
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2n1542a2n15992n1671a2n1811+162n2077a2n2192b2n15432n16062n1671b2n18122n21482n2148 transistor2n21472n22222n15452n21602n1906 transistor2n2147 transistor2n19062n1924
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transitron
Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216
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2n2193bnb312enb312fnb312x+15nb312y2sc4862n2389bfy34sa2710transitronrca 2n1701bfy462n1711 motorola2sc109a2n16662n16192n15652sc1364electron corp
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2N1652
Abstract: 2N1653 MIL-STD-780 2N1651 Germanium power
Contextual Info: MIL-S-19500/219A EL a annrr ioaq û A r UlU itruu jTTn’n ner'nrw^u OU MIL-S-19500/219(SigC) 21 NOVEMBER 1961 SPECIFICATION TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING TYPES 2N1651, 2N1Ö52, 2N1653 QOW m np lu î.î Scope. This spécification covers the de
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mil-s-19500/219amil-s-19500/2192n16512n1652+42n1653ic-25amil-std-780germanium power
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2n34a2n43a2n44a2n59a+162n59b2n59c2n60a2n60b2n60c2n61an17022n2772sa632n390al204a2n408tfk 940oc592n3742n1922
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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