2N2193B Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

2N2310

Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B

2SC1766C

Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133

rca 2n2147

Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer

2N2243

Abstract: 2n2405
Contextual Info: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

2n697

Abstract: 2N956 2N2905
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CEO h FE Coi Cob V CE(sat) h ^off PD PF MHz ns Ta 25°C MAX MIN MAX mW 250 285 800 3.0 TO-5

2N1990

Contextual Info: na. 20 STERN AVE. SPRINQRELD, NEW JERSEY 07081 U.SA TYPE NO DESCRIPTION VCBO VCEO V M Small Signal Transistors VEBO teo« VCB (MA) M M IFE et «vc (mA) 00 Vce(SAT)«lc M (mA) •CEO "ICES -ICEV —ICEH *VCER MIN MIN MIN 2N1975 NPNAMPUSWnrCH 100 60 7.0 2N1983

2SC1675L

Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A

2n11

Abstract: 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1420 2N910 2N911
Contextual Info: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. VCB VCE Veb V V V min hFE at *c VC E max mA V V 10 10 . 10

BSV12

Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252
Contextual Info: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) *VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP

Contextual Info: Small signal Transistors TO-39 Case Continued TYP E NO. D ESCRIPTION V CBO v CEO v EBO •C B O v CBO (V) (V) (V) *V CER Ü1A) e ie h FE <mA) (V) evCE V CE(SA T) ® *C (V) (V) ♦r (m A) Cob (MHz) *'CEO *on (n*) *otf NF (dB) *TYP (PF) TYP TYP (ns) *TYP

2N2222n

Abstract: 2n3053A complementary 2N2017 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2897 2N2193A
Contextual Info: TYPE NO. P O LA R ITY Medium Power Amplifiers and Switches CASE H MAXIMUM RATINGS Pd mW •c V CEO (A) (V) 1000 800 1000 1000 1 0.5 1 11 FE V CE(SAT) max 'c VC E (V) (V) 'c Cob COM PLE­ max M ENTARY (MHz) (pF) T YPE fT mki min max ImAI 60 50 65 65 50 100

2N171

Abstract: 2N1566
Contextual Info: Medium Power Amplifiers and Switches TY PE NO. POLA­ R IT Y CA SE M A X IM U M R A T IN G S VcEO Pd Ic ^CER * mW (A ) (V) H FE ^CE(sat) Ic ^CE m ax Ic m in m ax (m A ) (V) (V) (A ) fT C 0b m in m ax (M H z) (M H z) CO M PLE­ M ENTARY TY PE PN3642 PN3643

Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) VCE(sat) max VCE (V) (V) (A) fT min (MHz) Cob COMPLE­ max MENTARY TYPE (PF) 2N720A 2N721 2N91I 2N956 2N1132 N P N N P TO-18 TO-18 TO-18

2n1983

Abstract: 2N1990 2N1975 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) (V) *ICEO *ICES *ICEV *ICER MAX Cob (pF) ton (ns) toff (ns) (dB) NF *TYP *TYP *TYP

2N2270 equivalent

Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B

2N2102A

Abstract: switch NPN
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) (V) *ICEO *ICES *ICEV *ICER MAX Cob (pF) ton (ns) toff (ns) (dB) NF *TYP *TYP *TYP

bcy591x

Abstract: 2N6429A 2N2196 2N2147 2N2214 2N2161 2SC538A BCW66RG 2N2207 BC521
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18

2N702

Abstract: 2N3565 2N3569 2N1506 2N1069 2N1389 2N3645 2N3644 2N3566 2N2405A
Contextual Info: J325835_4 A D V A N C E D S E M I C O N D U C T O R 82 D n n n ^ Q SILICON ADVANCED T R A F ^ IST O R S 62 SEMICONDUCTOR P d @ T c =25°C POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A

2N2909

Abstract: 2N2645 2N3947 TO46 2N2196 2N2195A 2N2297 2N2353 2N3242A 2N4383
Contextual Info: 8134693 SEMICOA " 4Q D eT| 0 1 3 4 ^ 3 0Q0Q135 I NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Cont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN 2N2353 2N2195A 2N2353A 2N4383 2M4384 2N2297 2N2909 2N3242A 2N3946 2N3947 2N3053 2N2645 2N3110