3N50 Search Results

3N50PM

Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFP 3N50PM VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500 2.7 2.0 200 V A Ω ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings

747 diode

Abstract: 3N50Z
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N50Z Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr IXFP 3N50PM (Electrically Isolated Tab) = = ≤ ≤ 500 2.7 2.0 200 V A Ω ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings

Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTA 3N50P IXTP 3N50P IXTY 3N50P VDSS ID25 = 500 V = 3.6 A = 2.0 Ω RDS on N-Channel Enhancement Mode Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N50K-MK Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum

3N45

Abstract: 3N50 rfm3n P3N50
Contextual Info: m H a r r is RFM3N45/3N50 RFP3N45/3N50 N-Channel Enhancement Mode Power Field Effect Transistors August 1991 Packages Features TO -2Q 4AA • 3A, 4 5 0 V and 5 0 0 V • rD S on = 3 ^ • SO A is P o w er-D issip atio n Lim ited • N anosecond S w itching S peeds

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 3N50Z Preliminary Power MOSFET 3 A, 5 0 0 V N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON 1 The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: PolarHVTM Power MOSFET IXTA 3N50P IXTP 3N50P IXTY 3N50P VDSS ID25 RDS on = 500 V = 3.6 A ≤ 2.0 Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Maximum Ratings 500

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N50 Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N50 Preliminary Power MOSFET 3 Amps, 500 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

3N50P

Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTA 3N50P IXTP 3N50P IXTY 3N50P VDSS ID25 = 500 V = 3.6 A = 2.0 Ω RDS on N-Channel Enhancement Mode Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings

3N50P

Contextual Info: PolarHVTM Power MOSFET IXTA 3N50P IXTP 3N50P IXTY 3N50P VDSS ID25 RDS on = 500 V = 3.6 A ≤ 2.0 Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Maximum Ratings 500

3N50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N50 Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET 1 „ TO-220F DESCRIPTION The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

3N45

Abstract: 35165 TA9193 RFM3N45 RFM3N50 RFP3N45 RFP3N50 TA9232 rca application notes 35169
Contextual Info: Standard Power M O S F E T s _ File Number 1384 RFM3N45, 3N50, RFP3N45, 3N50 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors 3 A, 450 and 500 V rDs on : 3 0 Features: • SOA is p o w e r-d is s ip a tio n lim ite d

TO36 package

Abstract: 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 - 25 30 >= 40 45 50 60 See Index See Index See Index See Index Germanium See Index See Index See Index See Index Germanium 15 15 15 15 15 15 15 15 15 15 ~~n~7 ~elnClex ~~ 2N1557A MP1557 2N2078 2N2078A

DTG110B

Abstract: TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 2N2081A TO41 DTG2400
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (Hz) r •CBO Max Max (A) (8) (CE)sat •Oper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .

transistor D 1666

Abstract: transistor code x1 soic footprint
Contextual Info: 3N501 3.3V / 5.0V 13 MHz to 160 MHz PLL Clock Multiplier Description http://onsemi.com The 3N501 is a clock multiplier that will generate one of nine selectable output multiples of an input frequency via two 3−level select inputs S0, S1 . It accepts a standard fundamental mode crystal

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

RFM3N45

Abstract: RFM3N50 RFP3N45 RFP3N50 TA9193 TA9232 92CS-3316Z
Contextual Info: 3 8 7 5 0 8 1 G E S O L I D Standard Power MOSFETs S T A T E ^ 3 2 , D e I b ü T S G Ö 0 0 1 0 1 1 7 I fl I ” ' T~ V RFM3N45, 3N50, RFP3N45, 3N50 File N u m b e r 1384 Power M O S Field-Effect Transistors

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

varta v60r

Abstract: VARTA V170R GP60BNK-3A3H VARTA 60DK mempac 55611-702-012 varta v60r battery v60r 53310703012 QTC85
Contextual Info: 3 Volt Lithium Cells • 3.6 Lithium ■ Nicad Computer Packs ■ NIMH Computer Packs ■ Board Mount Lithium Batteries ■ PLC Batteries ■ Laptop Batteries ■ Bar Code Scanner Batteries ■ HELPFUL HINT Whether you are looking for a replacement battery for your laptop main power or memory backup or your customers bar code scanner. We have the battery!

TO36

Abstract: 2N511 TO41 2N1560 2N2075 2N1556A 2N1554 2N1519 2N1558 2n1980
Contextual Info: GERMANIUM POWER TRANSISTORS CURRENT G A IN Type Number Case Type VcBO y ^CEO y ^EBO V Y ce . V hFE VcES y Min. Vçe Max. @ y h A SA TU R A TIO N VOLTAGES Vc£lai ¡ e @ lg y y A A 8 / .c ° c /w 15 AMP GERMANIUM PNP Cont. 20.0 30.0 30.0 40.0 40.0 30 45 45

2n60p

Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond

Contextual Info: 3N501 3.3V / 5.0V 13 MHz to 160 MHz PLL Clock Multiplier Description http://onsemi.com The 3N501 is a clock multiplier that will generate one of nine selectable output multiples of an input frequency via two 3−level select inputs S0, S1 . It accepts a standard fundamental mode crystal