rca 101m
Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50
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2sc458k2n3856abc383lmps3707+13bc223abc232abc223rca 101mdelco2n15222n15432n15182n15642sc9682n15532n1457ed-1402
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Delco
Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -
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delcodelco ic180t2a2sc1777+62n15562n50342n5035180t2cmotorola 2n15391405 motorola
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TO36 package
Abstract: 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 - 25 30 >= 40 45 50 60 See Index See Index See Index See Index Germanium See Index See Index See Index See Index Germanium 15 15 15 15 15 15 15 15 15 15 ~~n~7 ~elnClex ~~ 2N1557A MP1557 2N2078 2N2078A
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2n1732n13582n174a2n1549+16mp15492n1549a2n6772n15532n1553amp1553to36 package2n2076pnp germanium to36to36to41dtg1210a2n2076a2n15602n1970germanium
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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transistor 5cw
Abstract: FSC-5961 2N1556A transistor 5cw 66 331a transistor 2N1553A 2N1554A transistor 5cw 33
Contextual Info: Ml I- S - l 9500/33JA EL A M EN D M EN T -2 29 January 197U SUPERSEDING A M EN D -1 15 June 1971 M ILITA R Y SPECIFICATIO N SEM ICO NDU CTO R DEVICE, TRANSISTOR, PNP, G ERM AN IU M TYPES 2N1553A through 2N1556A This amendment forms a part o f M ilitary S p ecification MIL-S-19i>00/331A (EL)
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l-s-19500/33ja2n1553a2n1556amil-s-19+900/331a-a582mil-s-19500/331a2n1554atransistor 5cwfsc-5961transistor 5cw 66331a transistortransistor 5cw 33
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transistor 21Y
Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
Contextual Info: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements
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/331amil-s-19500/2n1553a2n1556a+82n1554a2n1555atransistor 21y2n1556transistor 30522n1555j7172n1553
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2N1146
Abstract: GERMANIUM* 2n1099 2N1100 2N1557 2N1358 2N1558 2N278 TO36 2N1031B 2N1982
Contextual Info: 55 GERM ANIUM POWER TRANSISTORS CURREIV JT G A IN S A T U R A T IO IM V O LT A G E S @ T Y PE N U M BER C A SE T YPE V CBO V 15 AIV P G E mm 2N278 2N677 2N677A TO-36 TO-3 TO-3 2N677B 2N677C 2N678 V C EO V EBO V UM PIVIP Obse V C ER V ve — i'' V C ES V
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2n2782n6772n677a2n677b+132n677c2n6782n678a2n678b2n1146germanium* 2n10992n11002n15572n13582n1558to362n1031b2n1982
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2g1012g1022g1032g109+152g2202g2212g2222g2232g2242n1892n1136b2n420b1151 equivalent2sa114oc592t3122t203sft1252n1152
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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transistor 2n4st25c transistor2n407 transistor2sa114+6tfk 808transistor 2sc124sf1222ge2 transistortfk 877tfk 748
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TO36
Abstract: 2N511 TO41 2N1560 2N2075 2N1556A 2N1554 2N1519 2N1558 2n1980
Contextual Info: GERMANIUM POWER TRANSISTORS CURRENT G A IN Type Number Case Type VcBO y ^CEO y ^EBO V Y ce . V hFE VcES y Min. Vçe Max. @ y h A SA TU R A TIO N VOLTAGES Vc£lai ¡ e @ lg y y A A 8 / .c ° c /w 15 AMP GERMANIUM PNP Cont. 20.0 30.0 30.0 40.0 40.0 30 45 45
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2n1553a2n15542n1554a2n1555+142n1555a2n15562n1556a2n1557mt-368-32nc-2ato362n511to412n15602n20752n15192n15582n1980
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MOTOROLA POWER TRANSISTOR
Abstract: TO36 package 2N554 Motorola germanium transistor pnp 2N174 2N1545 motorola mesa transistors 1N2621A 2N398A 2N1358 JAN
Contextual Info: m a r c h RESTRICTED WPS Document Ccx OtC _ "* "1 A R EP O R T ON MOTOROLA SE M IC O N D U C T O R R E L IA B IL IT Y D u rin g the past y ear great strides have been m a d e in M o to ro la 's Q uality A ssu ran ce P ro g ram to provide assurance o f reliability . . . as well as a reliable product.
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motorola power transistorto36 package2n554motorola germanium transistor pnp+62n1742n1545motorola mesa transistors1n2621a2n398a2n1358 jan
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N1560
Abstract: 2N1982 2N2075 2N2081 2N511 TO41 2N511B TO36 3N50 2N1557
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case | Type Vcao y yceo y ytuo y VCES VCE, y V CURRENT GAIN Min. Max. V h FE V CE @ SATURATION VOLTAGES .] Ic @ Iß y y A A A Yctti Iç Bj.c °c/w 15 AMP GERMANIUM PNP (Cont.) 20.0 30.0 30.0 40.0 40.0 30 45 45 60 60
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2n1553a2n15542n1554a2n1555+152n1555a2n15562n1556a2n1557ns257t0-182n15602n19822n20752n20812n511to412n511bto363n50
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TO41
Abstract: TO36 Germanium Power Transistors Germanium Power Devices 2N1554 2N1554A 2N1555 2N1555A 2N1556 2N1557
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number | Case Type Vcao y y ceo y y tuo y VCES y VCE, V CURRENT G A IN hFE VCE @ Iç Min. Max. V A SA TU R A TIO N VOLTAGES Yctti .] / c @ Ib y y A A Bj.c ° c /w 15 AMP GERMANIUM PNP (Cont.) 20.0 30.0 30.0 40.0 40.0 30 45
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2n1553a2n15542n1554a2n1555+102n1555a2n15562n1556a2n15572n1557a40rmaniumto41to36germanium power transistorsgermanium power devices
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2N1552
Abstract: Germanium power 2N1559a 2N1560 2N1555
Contextual Info: germanium. power transistors 150 T03/ See Pg. 147 for outline d PNP ALLOY TRANSISTORS 10.0 Amp BREAKDOWN VOLTAGES TYPE NUMBER V eB 2N677 2N677A 2N677B 2N677C 2N678 2N678A 2N678B 2N678C 2N1031 2N1031A 2N1031B 2N1031C 2N1032 2N1032A 2N1032B 2N1032C 2N1120
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2n6772n677a2n677b2n677c+112n6782n678a2n678b2n678c2n10312n1031a2n1552germanium power2n1559a2n15602n1555
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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sem 5027atransistor bd 540 lysmc710g131-80 wj 89+6mc707g2n328ln4005 diode reverse current and voltagemc708gc844pts36a
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