2N439 Search Results

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

SST4393

Abstract: SILICONIX 2N4391
Contextual Info: SST4391 SERIES N-Channel JFETs C f S ilic o n ix in c o rp o ra te d The SST4391 Series is the surface mount equivalent of our popular 2N4391 device types. Its low cost and low rDS on rnake it a good choice for an all-purpose analog switch, while its high g^ and good high-frequency

pn4393

Abstract: PN4391 equivalent PN4392 equivalent
Contextual Info: PN4391 SERIES N-Channel JFETs The PN4391 Series is the plastic equivalent of our popular 2N4391 Series. These devices are especially well suited for analog switching applications but function efficiently as high-gain amplifiers, particularly at high-frequency. Our low-cost TO-92 packaging

PW 2N

Abstract: SST4393 Q3060 marking 2n sot23 2N4392 4392 ic equivalent PW 2N 150 SST4391
Contextual Info: Tem ic 2N/PN/SST4391 Series S e m i c o n d u c l o r s N-Channel JFETs 2N4391 2N4392 2N4393 PN4391 SST4391 PN4392 SST4392 PN4393 SST4393 Product Summary Part Number VGS off (V) r DS(on) Max (Q) iD(off) Typ (pA) to N T V p (n s) 2N/PN/SST4391 - 4 to -10 30

2N4398

Contextual Info: TEXAS INSTR bE {OPTO} “Ô 9 6 T 7 2 6 TEXAS IN S T R D E | a^tlTHb 003bSò7 <O P T O 62C 36587 r - 3 î ' D l 3 2N4398,2N4399 P-N-P SILICON POWER TRANSISTORS RE V ISE D OCTO BER 19 84 • Designed for Complementary Use With 2N 5301, 2 N 5 3 0 2 • 2 0 0 W a t 25° C Case Temperature

2N4391

Contextual Info: B 13 9 -9 7 2N4391, 2N4392, 2N4393 N - C H A N N E L SILICO N JU N C T IO N FIELD-EFFECT TR AN SISTO R • • • LOW ON RESISTANCE ANALOG SWITCHES Absolute maximum ratings at TA =2 5 X CHOPPERS Reverse Gate Source & Reverse Gate DrainVoHage COMMUTATORS Continuous Forward Gate Current

Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • DS0433Ô 000b5E3 S31 ■ AL6R JUNCTION FIELD-EFFECT TRANSISTORS • ELECTRICAL CHARACTERISTICS at TA= + 25°C A V 1 G S o ff V Y (B R )G S S Allegro Min. @ IG Max. @ V GS Min. Max. Type Type Polarity (V) (HA) (nA) 2N4391

2N4395

Contextual Info: 2N4395 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N4397

Contextual Info: 2N4397 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

TIP 110 transistor

Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
Contextual Info: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature

2N4398

Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC D yZ-SS-TX 26C 0 0 2 3 8 ' Sb DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050

2N3713

Abstract: 2n3055 complement 2N5068 2N3055 2N3714 2N3789 2N3790
Contextual Info: TRANSISTORS—POWER NPN TO—3 PACKAGE VOLTS *c AMPS MIN MAX 2N5067 40 5 20- 80 @ 1.0 1.5 @ 5 87.5 4.0 2N4901 2N4913 40 5 25 - 100 @ 2.5 1.5 @ 5 87.5 4.0 2N4904 2N5301 40 30 15- 60 @ 2.0 @ 20 2.0 2N4398 2N5068 60 5 20- 80 @ 15 1.0 1.5 @ 5 87.5 4.0 2N4902 2N4914

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247

Contextual Info: Illl iF t i mi SEME 2N4393CSM LAB SMALL SIGNAL N-CHANNEL J-FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.51 a 0.10 (0.02 ± 0 .004) * 0.31 _/(00i2y A 1 i • HERMETIC CERAMIC SURFACE MOUNT

N-Channel jfet 40V depletion

Abstract: 2N4392
Contextual Info: 2N4392 MECHANICAL DATA Dimensions in mm inches JFET SWITCHING N CHANNEL- DEPLETION 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • LOW ON RESISTANCE • FAST SWITCHING

data sheet ic 4089 free download

Abstract: ic 4089 free download 2N4398 200W AMPLIFIER
Contextual Info: 2N4398 MECHANICAL DATA Dimensions in mm inches MEDIUM POWER PNP SWITCHING TRANSISTOR FOR SWITCHING APPLICATIONS 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . FEATURES 1 1 .4 3 (0 .4 5 0 )

4392

Abstract: 2N4393 2N4391 marking 18w sot23 18W SOT23 PN4391 SST4391 SST4392 SST4393 SOT23 MARKING N03
Contextual Info: Colo^ÎC N-Channel JFET Switch CORPORATION \J 2N4391 - 2N4393/PN4391 - PN4393/SST4391 - SST4393 A B S O L U T E MAXIMUM RATINGS FEATURES Ta = 25°C unless otherwise noted • r<js(on)<300 O h m s (2N4391) • G ate-Source or Gate-Drain V o lt a g e . -40V

2N4393

Abstract: 2N4392 2N4391 transistor 4393
Contextual Info: 2N4391 to 4393 J ' - N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for low power, chopper or switching,

2N4393

Abstract: 4392 ITE4392 2N4391 2N4392 X2N4391 X2N4392 X2N4393 ITE4393 CGC SWITCH
Contextual Info: 2N4391 - 2N4393 / ITE4391 - ITE4393 C A LOG IC CORP 4ÔE D • 1Û HH 3 2 E DO OO B O R 1 M C G C calotfc N-Channel JFET Switch CORPORATION v T-3°i-oS 2N4391 - 2N4393/ ÏÏE4391 - ITE4393 — ABSOLUTE MAXIMUM RATINGS FEATURES {T a » 25°C unless otherwise noted

2N4399

Abstract: 1000C 2N5745
Contextual Info: TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433 Devices Qualified Level 2N4399 JANTX JANTXV 2N5745 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N4399

Abstract: 2N4398 2N5301 2N5302 2N5303 2N5745
Contextual Info: PNP SILICON HIGH-POWER TRANSISTORS PNP 2N4398 2N4399 2N5745 General Purpose use in amplifier and switching applications. Boca Semiconducotor Corp. fe a tu re s : *DC Current Gain Specified-1.0 to 30 A * Low Collector-Emitter Saturation Voltage - RSP 75 V Max @ 'c = 10 A - 2N4398, 2N4399

2N4391

Contextual Info: 2N4391 N-Channel Silicon Junction Field-effect Transistor 9.80 Transisto. 1 of 1 Home Part Number: 2N4391 Online Store 2N4391 Diodes N- C hannel Silic o n J unc tio n Field-effect Trans is to r Transistors

J177. P-CHANNEL. TO-92

Abstract: 2N4393 2N5021 2N4856 2N5116 datasheet for transistor 2n4860 interfet J174 smp4856 2N4391
Contextual Info: Databook.fxp 1/14/99 11:30 AM Page B-13 B-13 01/99 2N4391, 2N4392, 2N4393 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low On Resistance Analog Switches ¥ Choppers ¥ Commutators 2N4391 At 25°C free air temperature

Contextual Info: SILICON SMALL SIGNAL N-CHANNEL JFET 2N4392 • Hermetic TO18 Package. • Low on Resistance • Fast Switching • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS VGS VGD IG PD Drain – Source Voltage Gate – Source Voltage