2N6329 Search Results

2N4398

Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC D yZ-SS-TX 26C 0 0 2 3 8 ' Sb DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050

AP1020

Abstract: 2N4398 2N4399 2N6329 2N6330 2N6331 AP1021 AP1048 AP1049 AP1050
Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC 26C 0 0 2 3 8 ' Sb D yZ-SS-TX DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050

5305da

Abstract: 5305d 2N6329 2N6330 2n6331
Contextual Info: T Y P E S 2N6329, 2N6330, 2N6331 P-N -P S IN G L E -D IF F U S E D M ES A SILICON P O W ER T R A N S IS T O R S IB H C -< FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25° C Case Temperature

2N4398

Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
Contextual Info: COLLECTOR CURRENT = 30 AMPS PNP TYPES Device No Case 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050 AP1063 AP1071 AP1095 AP1096 AP1113 TO -3 TO-3 TO-3 TO -3 TO-3 TO-3 TO-63 TO-63 TO-3 T O -63 TO-63 TO-3 TO-63 TO-3 TO 61/1 TO-63 TO-3

Contextual Info: 2N6329 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)114# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30

23741

Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
Contextual Info: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967

"PNP Transistor"

Abstract: 2N6329
Contextual Info: PNP Transistor D ivisio n Law rence M il- S p e c none S h ip p in g (none) Package 2N6329 (#23928) O u a l D ata (none) Absolute M axim um Ratings Symbol Max P o w e r D issipatio n Pow er 200 W 30 A 60 V 60 V 5 V C o lle c to r C u rre n t *c B r e a k d o w n V o l t a g e C o lle c to r-to -B a s e

2N6331

Abstract: 2N6328 2N6330 2N6326 2N6327 2N6329 LE17
Contextual Info: Magnatec K MAGNA Magna Park, Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Admin telephone: 01455 552505 Fax: 0*.455 558843 C < r tt< *» H o FM 3«»S TYPES 2N6329, 2N6330;,2N6331 P-N-P SILICON POWER T R A N S I S T O R S

Contextual Info: 0043 5 9 2 A P I A P I EL ECTRONI CS INC _ 26C ELECTRONICS INC ib D “7 C 3 3 . Û 00238 DE | D a 4 3 S cì5 000D23A 3 |~~ COLLECTOR CURRENT = 30 AMPS PN P TYPES D evice No C ase 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC 8030

Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
Contextual Info: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3

NES 2N5672

Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789
Contextual Info: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé­ ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

SKC25K85

Abstract: ST29045 2SD319 P1743-0630 BUW18 SDT9701 1561-0810
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (HZ) ICBO t0N r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . -5 -10 -15 -20 . . -25

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

2NXXXX

Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
Contextual Info: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z

TIP360

Abstract: b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 A, BLX84 2SB1079 B07460 B07460 RCA91160 B0750A B0750A B0751A B0751A B0750C ~g;~~g 15 20 B0751C MJ15004 RCA9116C 2SC2820 SSP72 TIP36 B0250 SSP72A ~~~~~A 25 30 2N5883 SSP72B B0250B TIP36B 2N5884 2N6436

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,