2N384 Search Results

D38S1-4

Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,

2N5251

Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
Contextual Info: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX

Contextual Info: 2N3847+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)20 Absolute Max. Power Diss. (W)4.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3846

Contextual Info: TYPES 2N3846, 2N3847 N-P-N TRIPLE-DIFFUSED MESA SILICON POWER TRANSISTORS a H c < r FOR POWER-AMPUFIER APPLICATIONS • 150 Watts at 100°C Case Temperature • 200 V, 300 V Rated Collector-Emitter Voltages • Max VCE ia„ • Max Thermal Resistance of 0.5 deg/W

1000C

Abstract: 2N3847 2N3846
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices Qualified Level 2N3846 JAN JANTX JANTXV 2N3847 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

Contextual Info: 2N3846+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)200 V(BR)CBO (V)300 I(C) Max. (A)20 Absolute Max. Power Diss. (W)4.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BF394 MOTOROLA

Abstract: 2SC733 LOW-POWER SILICON NPN 2N542 S8GD BF215 BF226 BFW29 2SC733/G
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2N3845 2N3845A 2N3855A 2S0654 TEC80130 TEC80130 2SC828 BF394 BF3950 2N1278 ~~~~~9 15 20 BF238 BF215 BF215 BF226 BF226 NR4210S NR421FS 2SC733 ~~g~~~ 25 30 BFW29 BFW29 BFW29 2SC367G 2SC504 2SC504 2SC504 2SC509G

quan-tech

Abstract: D39C4 2N3901 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,

2N4250

Abstract: 2N5133 2N4249 2N4288 2N4291 to 106 2n5133 2N4248 2N3901 2N3707 2N3708
Contextual Info: TYPE NO. 2N3721 2N3798 2N3799 2N3843 2N3843A 2N3844 N N N N N N P P N N CASE MAXIM UM RATINGS Pd ImW 'c V CEO mA) (V ) TO-92B TO-92B TO-92B TO-92B TO-92B 360 360 360 360 360 200 200 200 200 200 30 30 30 30 30 TO-92B TO-18 TO-18 TO-92B TO-92B 200 360 360

Contextual Info: 2N3846+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)200 V(BR)CBO (V)300 I(C) Max. (A)20 Absolute Max. Power Diss. (W)4.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3849 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)20 Absolute Max. Power Diss. (W)4.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3848 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)300 I(C) Max. (A)20 Absolute Max. Power Diss. (W)4.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3845 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125þ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2H2904

Abstract: 2NI483-86
Contextual Info: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879

Contextual Info: 'Is.ii.E.u*y <3Emi- 2ondu.otoT O^ , Dna. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N3847 N-P-N SILICON POWER TRANSISTOR ••btolute maximum ratings at 25*C ease temperature (unless otherwise noted)

2N384

Abstract: TO44 package
Contextual Info: 2N384 Ge PNP Lo-Pwr BJT 7.87 Transistors Bipolar Germanium PNP L. 1 of 2 Home Part Number: 2N384 Online Store 2N384 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

27e transistor

Abstract: 2N384 MARKING 27E MC 340 transistor SJ 2036 TO-44 h a 432 transistor table of specification
Contextual Info: MIL-S-19500/27E s u p e r s e d in g " MIL-S-19500/27D 13 M ay 1963 M IL IT A R Y S P E C IF IC A T IO N S EM IC O N D U C T O R D E V IC E , T R A N S IS T O R , P N P , G E R M A N IU M , H IG H - F R E Q U E N C Y T Y P E 2N384 T h is sp ecificatio n is m andatory fo r use by a ll D e­

2N3847

Abstract: 1000C 2N3846 TO63 package
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices Qualified Level 2N3846 JAN JANTX JANTXV 2N3847 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

Contextual Info: 2N3840 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A).5nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3843 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125þ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

D39C4

Abstract: ei50 2n5306 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,

2N3846

Abstract: 2N3847 PAWOR ITT 232-2
Contextual Info: TYPES 2N3846, 2N3847 N-P-N TRIPLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER APPLICATIONS • 150 Watts at 100°C Case Temperature • 200 V, 300 V Rated Collector-Emitter Voltages • Max Va|„„ of 0.75 V at 10 A l c • Max Thermal Resistance of 0.5 deg/W

2N3846

Abstract: 1000C 2N3847 npn power transistor 2n3847
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices Qualified Level 2N3846 JAN JANTX JANTXV 2N3847 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

2N5415

Contextual Info: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420