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    2SA160 Search Results

    2SA160 Datasheets (121)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA160
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 78.96KB 1
    2SA160
    Unknown Cross Reference Datasheet Scan PDF 37.49KB 1
    2SA160
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 140.68KB 1
    2SA160
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 90.38KB 1
    2SA160
    Unknown The Japanese Transistor Manual 1981 Scan PDF 106.92KB 2
    2SA160
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 184.45KB 2
    2SA160
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.61KB 1
    2SA160
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 42.81KB 1
    2SA1600
    Shindengen Electric Switching Power Transistor Original PDF 269.15KB 8
    2SA1600
    Shindengen Electric Low-Saturation Voltage Switching Transistors - LSV Series (Three Terminal Type) Original PDF 293.64KB 8
    2SA1600
    Shindengen Electric TRANSISTOR,BJT,ARRAY,DARLINGTON,200V V(BR)CEO,3A I(C),SIP Original PDF 84.17KB 3
    2SA1600
    Shindengen Electric Switching Power Transistor Original PDF 297.53KB 8
    2SA1600
    Unknown Japanese Transistor Cross References (2S) Scan PDF 36.14KB 1
    2SA1600
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 107.72KB 1
    2SA1600
    Unknown Transistor Substitution Data Book 1993 Scan PDF 33.31KB 1
    2SA1600
    Shindengen Electric Low Saturation Voltage Power Transistors Scan PDF 53.65KB 1
    2SA1601
    Shindengen Electric Switching Power Transistor Original PDF 276.29KB 8
    2SA1601
    Shindengen Electric Low-Saturation Voltage Switching Transistors - LSV Series (Three Terminal Type) Original PDF 300.94KB 8
    2SA1601
    Shindengen Electric TRANSISTOR,BJT,ARRAY,DARLINGTON,200V V(BR)CEO,3A I(C),SIP Original PDF 84.17KB 3
    2SA1601
    Shindengen Electric Switching Power Transistor Original PDF 304.78KB 8
    ...
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    3M Interconnect 1U30G-MB2-SA1-600

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    Master Electronics 1U30G-MB2-SA1-600
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    3M Interconnect 1U30A-MB2-SA1-600

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    3M Interconnect 1U30A-TC2-SA1-600

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    ITT Interconnect Solutions 2DB52S-A160

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    2SA160 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1601

    Abstract: ITO-220
    Contextual Info: JMnic Product Specification 2SA1601 Silicon PNP Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor ・Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol


    Original
    2SA1601 ITO-220 ITO-220) 2SA1601 PDF

    2sc4168

    Abstract: 2479-1 4CC3
    Contextual Info: Ordering num ber' E N 2 4 7 9 A 2SA1607/2SC4168 No.2479A PNP/NPN Epitaxial Planar Silicon Transistors SA%YO High-Speed Switching Applications Features •Fast switching speed ■High gain-bandwidth product • Low saturation voltage 2SA1607 A bsolute M axim um R atings at Ta = 25°C


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    2SA1607/2SC4168 2SA1607 2sc4168 2479-1 4CC3 PDF

    2SD1539

    Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
    Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5


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    O-126 O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SD1539 d53 pnp transistor 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 PDF

    Contextual Info: •12AI L 2SA1600OTPÎ2T V s e rie s v * * * r * PNP O u tlin e Dimensions case : ITO-220 ' i n ­ ■ A b so lute Maximum R atin g s is a 12 Symbol Item » & » £ )* Junction Temperature n u 7 9 • x fl;j± Collector to Base Voltage 3 I- ? ? • i ; 7 ? ' S J I


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    2SA1600OTPÃ ITO-220 2SA1600 TP12T4) PDF

    BI326

    Abstract: I326 2SA1605
    Contextual Info: Power Transistors 2SAT605 2SA1605 Silicon PNP Epitaxial Planar Type Package Dim ensions G eneral Amplifier Un it I mm • Feature 10.0 • H igh c o lle c to r-e m itte r v o lta g e V 0.5 ceo h £ 6.5 ■ Absolute Maximum Ratings (Ta=25°C) Symbol Value


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    2SAT605 2SA1605 O-202 i32flS2 i326S2 BI326 I326 2SA1605 PDF

    Contextual Info: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1601 Case : ITO-220 TP15T4 Unit : mm -15A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage


    Original
    2SA1601 TP15T4) ITO-220 PDF

    2SC4156

    Abstract: 2SA1604
    Contextual Info: Ordering number : 2 5 4 5 2SA1604 2SC4156 PNP/NPN Epitaxial Planar Type Silicon Transistors High-Speed Switching Applications


    Original
    2SA1604 2SC4156 2SC4156 2SA1604 PDF

    MEF250

    Abstract: 2sa1602 mg 2SA1602
    Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1602 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1602 is a super mini package resin sealed silicon PNP epitaxial Unit:mm OUTLINE DRAWING 2 .1± 0.2 type transistor. It is designed for low frequency voltage amplify application.


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    2SA1602 2SA1602 2SC4154. SC-59 2SA1235. -100mA -10mA) 270HZ 270Hz X10-3 MEF250 2sa1602 mg PDF

    2sa160

    Abstract: 2SA1607 2SC4168 ITR04038 ITR04039 ITR04040 ITR04041
    Contextual Info: Ordering number:ENN2479B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. unit:mm 2018B 0.4 0.16 0 to 0.1


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    ENN2479B 2SA1607/2SC4168 2018B 2SA1607/2SC4168] 2SA1607 2sa160 2SA1607 2SC4168 ITR04038 ITR04039 ITR04040 ITR04041 PDF

    Contextual Info: SEC DATA SHEET ELECTRONDEVICE SILICO N TRAN SISTO R / ^ ^ _ 2SA1608 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR FEATURES P A C K A G E D IM E N S IO N S in m illim e te rs • High f T : f T = 4 0 0 M Hz 2 .1± 0.1 •


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    2SA1608 2SC3739 PDF

    Contextual Info: Product specification 2SA1607 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High gain-bandwidth product. 0.4 3 Fast switching speed. 1 0.55 Low saturation voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


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    2SA1607 OT-23 -10mA PDF

    marking SMD Y12

    Abstract: marking Y12 smd y12 2sa160 SMD y14 2SA1608 hFE CLASSIFICATION Marking marking y13 SMD Transistors y13
    Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1608 Features High fT: fT=400MHz. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -40 V Emitter-base voltage


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    2SA1608 400MHz. -150m-2V -150mA -500mA -50mA 150mA marking SMD Y12 marking Y12 smd y12 2sa160 SMD y14 2SA1608 hFE CLASSIFICATION Marking marking y13 SMD Transistors y13 PDF

    2SA1601

    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1601 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -7.5A ·Large Current Capability-IC= -15A


    Original
    2SA1601 2SA1601 PDF

    2SC4168

    Abstract: 2SA1607 ns1110 en2479a
    Contextual Info: Ordering number:EN2479A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. unit:mm 2018A [2SA1607/2SC4168]


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    EN2479A 2SA1607/2SC4168 2SA1607/2SC4168] 2SA1607 2SC4168 2SA1607 ns1110 en2479a PDF

    2SA1602

    Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1602 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Super mini type DESCRIPTION OUTLINE DRAWING 2SA1602 is super mini package resin sealed Unit:mm silicon PNP epitaxial transistor, It is designed for low frequency voltage application.


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    2SA1602 2SA1602 -100mA -10mA JEITASC-70 PDF

    Contextual Info: SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEA TU RES PACKAGE DIMENSIONS in m illim e te rs • High fT : f T =400 MHz • Complementary to 2SC3739 2 . 110.1 1 .2 5 ± 0 .1 A B S O L U T E M AXIM UM R A T IN G S


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    2SA1608 2SC3739 PDF

    2SA1601

    Abstract: ITO-220
    Contextual Info: SavantIC Semiconductor Product Specification 2SA1601 Silicon PNP Power Transistors DESCRIPTION •With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol


    Original
    2SA1601 ITO-220 ITO-220) 2SA1601 PDF

    2SA1600

    Abstract: ITO-220 TP12T4
    Contextual Info: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1600 Case : ITO-220 TP12T4 Unit : mm -12A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


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    2SA1600 ITO-220 TP12T4) 2SA1600 ITO-220 TP12T4 PDF

    2SC4159

    Abstract: 2SA1606
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1606 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC4159 APPLICATIONS ·Designed for high-voltage switching, AF power amplifier,


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    2SA1606 -160V 2SC4159 -50mA -10mA; -120V; -300mA; -50mA, 2SC4159 2SA1606 PDF

    2SA1600

    Abstract: ITO-220 416W
    Contextual Info: JMnic Product Specification 2SA1600 Silicon PNP Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor ・Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol


    Original
    2SA1600 ITO-220 ITO-220) 2SA1600 416W PDF

    Contextual Info: Product specification 2SA1608 Features High fT: fT=400MHz. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current


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    2SA1608 400MHz. -150mA -500mA -50mA 150mA PDF

    2SC4174

    Abstract: 2SA1572 2SAI611 2SA1584 2SA1609 2SA1613 2sc4118 2SA1568 2SA1571 2SA1573
    Contextual Info: - 42 - Ta=25‘iO, *EP(àTc=25'1C M 2SA1568 2SA1571 2SA1572 2SA1573 2SA1574 2SA1575 2SA1576 2SA1577 2SA1579 2SA1580 2SA1581 2SA1582 2SA1584 2SA1585S 2SA1586 2SA1587 2SA1588 2SA1589 2SA1590 2SA1591 2SA1592 2SA1593 2SA1597 2SA1602 2SA1603 2SA1604 2SA1605 2SA1606


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    2SA1568 2SA1571 2SA1572 2SA1573 2SA1574 2SA1575 2SC4154 2SA1602 2SC4155 2SA1603 2SC4174 2SA1572 2SAI611 2SA1584 2SA1609 2SA1613 2sc4118 2SA1568 2SA1571 PDF

    2SA1606

    Abstract: 12 v 100w amp
    Contextual Info: O rdering num ber: EN 2535 2SA1606/2SC4159 PNP/NPN Epitaxial Planar Silicon Transistors SAMYOi i 160V/1.5A, AF 100W Driver Applications Applications . High-voltage switching, AF power amp, 100W output predrivers Features . Miealess package facilitating mounting


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    2SA1606/2SC4159 60V/1 2SA1606 2SC4159 0Dm73 12 v 100w amp PDF

    2SA1607

    Abstract: 2SC4168 2SA416 2sa41 D1099 ITR04038 ITR04039 ITR04040 ITR04041 VR 5k
    Contextual Info: 注文コード No. N 2 4 7 9 A 2SA1607/2SC4168 No. N 2 4 7 9 A D1099 *半導体ニューズ 2479 とさしかえてください。 2SA1607 / 2SC4168 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高速スイッチング用


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    2SA1607/2SC4168 D1099 2SA1607 2SC4168 2SA1607 ITR04053 ITR04051 2SC4168 2SA416 2sa41 D1099 ITR04038 ITR04039 ITR04040 ITR04041 VR 5k PDF