2SA160 Search Results

2SA1601

Abstract: ITO-220
Contextual Info: JMnic Product Specification 2SA1601 Silicon PNP Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor ・Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol

2sc4168

Abstract: 2479-1 4CC3
Contextual Info: Ordering num ber' E N 2 4 7 9 A 2SA1607/2SC4168 No.2479A PNP/NPN Epitaxial Planar Silicon Transistors SA%YO High-Speed Switching Applications Features •Fast switching speed ■High gain-bandwidth product • Low saturation voltage 2SA1607 A bsolute M axim um R atings at Ta = 25°C

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

Contextual Info: •12AI L 2SA1600OTPÎ2T V s e rie s v * * * r * PNP O u tlin e Dimensions case : ITO-220 ' i n ­ ■ A b so lute Maximum R atin g s is a 12 Symbol Item » & » £ )* Junction Temperature n u 7 9 • x fl;j± Collector to Base Voltage 3 I- ? ? • i ; 7 ? ' S J I

BI326

Abstract: I326 2SA1605
Contextual Info: Power Transistors 2SAT605 2SA1605 Silicon PNP Epitaxial Planar Type Package Dim ensions G eneral Amplifier Un it I mm • Feature 10.0 • H igh c o lle c to r-e m itte r v o lta g e V 0.5 ceo h £ 6.5 ■ Absolute Maximum Ratings (Ta=25°C) Symbol Value

Contextual Info: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1601 Case : ITO-220 TP15T4 Unit : mm -15A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage

2SC4156

Abstract: 2SA1604
Contextual Info: Ordering number : 2 5 4 5 2SA1604 2SC4156 PNP/NPN Epitaxial Planar Type Silicon Transistors High-Speed Switching Applications

MEF250

Abstract: 2sa1602 mg 2SA1602
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1602 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1602 is a super mini package resin sealed silicon PNP epitaxial Unit:mm OUTLINE DRAWING 2 .1± 0.2 type transistor. It is designed for low frequency voltage amplify application.

2sa160

Abstract: 2SA1607 2SC4168 ITR04038 ITR04039 ITR04040 ITR04041
Contextual Info: Ordering number:ENN2479B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. unit:mm 2018B 0.4 0.16 0 to 0.1

Contextual Info: SEC DATA SHEET ELECTRONDEVICE SILICO N TRAN SISTO R / ^ ^ _ 2SA1608 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR FEATURES P A C K A G E D IM E N S IO N S in m illim e te rs • High f T : f T = 4 0 0 M Hz 2 .1± 0.1 •

Contextual Info: Product specification 2SA1607 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High gain-bandwidth product. 0.4 3 Fast switching speed. 1 0.55 Low saturation voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

marking SMD Y12

Abstract: marking Y12 smd y12 2sa160 SMD y14 2SA1608 hFE CLASSIFICATION Marking marking y13 SMD Transistors y13
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1608 Features High fT: fT=400MHz. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -40 V Emitter-base voltage

2SA1601

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1601 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -7.5A ·Large Current Capability-IC= -15A

2SC4168

Abstract: 2SA1607 ns1110 en2479a
Contextual Info: Ordering number:EN2479A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. unit:mm 2018A [2SA1607/2SC4168]

2SA1602

Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1602 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Super mini type DESCRIPTION OUTLINE DRAWING 2SA1602 is super mini package resin sealed Unit：mm silicon PNP epitaxial transistor, It is designed for low frequency voltage application.

Contextual Info: SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEA TU RES PACKAGE DIMENSIONS in m illim e te rs • High fT : f T =400 MHz • Complementary to 2SC3739 2 . 110.1 1 .2 5 ± 0 .1 A B S O L U T E M AXIM UM R A T IN G S

2SA1601

Abstract: ITO-220
Contextual Info: SavantIC Semiconductor Product Specification 2SA1601 Silicon PNP Power Transistors DESCRIPTION •With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol

2SA1600

Abstract: ITO-220 TP12T4
Contextual Info: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1600 Case : ITO-220 TP12T4 Unit : mm -12A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SC4159

Abstract: 2SA1606
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1606 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC4159 APPLICATIONS ·Designed for high-voltage switching, AF power amplifier,

2SA1600

Abstract: ITO-220 416W
Contextual Info: JMnic Product Specification 2SA1600 Silicon PNP Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor ・Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol

Contextual Info: Product specification 2SA1608 Features High fT: fT=400MHz. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current

2SC4174

Abstract: 2SA1572 2SAI611 2SA1584 2SA1609 2SA1613 2sc4118 2SA1568 2SA1571 2SA1573
Contextual Info: - 42 - Ta=25‘iO, *EP(àTc=25'1C M 2SA1568 2SA1571 2SA1572 2SA1573 2SA1574 2SA1575 2SA1576 2SA1577 2SA1579 2SA1580 2SA1581 2SA1582 2SA1584 2SA1585S 2SA1586 2SA1587 2SA1588 2SA1589 2SA1590 2SA1591 2SA1592 2SA1593 2SA1597 2SA1602 2SA1603 2SA1604 2SA1605 2SA1606

2SA1606

Abstract: 12 v 100w amp
Contextual Info: O rdering num ber: EN 2535 2SA1606/2SC4159 PNP/NPN Epitaxial Planar Silicon Transistors SAMYOi i 160V/1.5A, AF 100W Driver Applications Applications . High-voltage switching, AF power amp, 100W output predrivers Features . Miealess package facilitating mounting

2SA1607

Abstract: 2SC4168 2SA416 2sa41 D1099 ITR04038 ITR04039 ITR04040 ITR04041 VR 5k
Contextual Info: 注文コード No. N 2 4 7 9 A 2SA1607/2SC4168 No. N 2 4 7 9 A D1099 ＊半導体ニューズ 2479 とさしかえてください。 2SA1607 / 2SC4168 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高速スイッチング用