2SA1593 Search Results

Contextual Info: Ordering number : EN2511B 2SA1593/2SC4135 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity

2SA1593

Abstract: 2SC4135 2sa 750 2044B D1099 ITR04011 ITR04012 IC 2 5/mip3e3my
Contextual Info: 注文コード No. N 2 5 1 1 A 2SA1593/2SC4135 No. N 2 5 1 1 A D1099 * 半導体ニューズ No.2511 とかしかえてください。 2SA1593 / 2SC4135 用途 ・電源 , リレードライブ , ランプドライブ。 特長 ・FBET, MBIT プロセス採用。

Contextual Info: 2SA1593/2SC4135 Ordering number : EN2511B SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity

EN2511

Abstract: 2SC1593 2SC159 C4135 ITR04022 S1514
Contextual Info: 2SA1593/2SC4135 Ordering number : EN2511B SANYO Semiconductors DATA SHEET 2SA1593/2SC4135 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity

2SC4174

Abstract: 2SA1572 2SAI611 2SA1584 2SA1609 2SA1613 2sc4118 2SA1568 2SA1571 2SA1573
Contextual Info: - 42 - Ta=25‘iO, *EP(àTc=25'1C M 2SA1568 2SA1571 2SA1572 2SA1573 2SA1574 2SA1575 2SA1576 2SA1577 2SA1579 2SA1580 2SA1581 2SA1582 2SA1584 2SA1585S 2SA1586 2SA1587 2SA1588 2SA1589 2SA1590 2SA1591 2SA1592 2SA1593 2SA1597 2SA1602 2SA1603 2SA1604 2SA1605 2SA1606

2SC4135

Abstract: 2044B 2SA1593
Contextual Info: Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions • Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] 2.3 5.5 1.5

Contextual Info: Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions • Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] 2.3 5.5 1.5

Contextual Info: 2SA1593 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)220m @I(C) (A) (Test Condition)1

C4135

Abstract: sc413 N0251 2044B 2SA1593 A1593 2sa159
Contextual Info: Ordering n u m b e r:EN 2511A 2SA1593/2SC4135 N0.2511A SANYO PNP/NPN Epitaxial Planar Silicon Transistors i High-Voltage Switching Applications Applications . Power supplies, relay drivers, lamp drivers Features . . . . Adoption of FBET, MBIT processes High breakdown voltage and large current capacity

C4135

Contextual Info: ^Ordering number: EN 2 S 1 1A 2SA1593/2SC4135 N 0.2 5 1 1 A r PN P/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Applications . Power supplies, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . High breakdown voltage and large current capacity

C4135

Contextual Info: Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Package Dimensions unit:mm 2045B Features [2SA1593/2SC4135] • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity.

EN2511

Abstract: 2511 2044B 2SA1593 2sc4135
Contextual Info: Ordering number:EN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions • Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] · Adoption of FBET, MBIT processes.

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.