GA300 Search Results

diode 944 lg

Abstract: B301A ga331 LT 943 diode 945 lg
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEA TU RES DESCRIPTION • • • • • Unitrode’s Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this

Contextual Info: DIGITRON SEMICONDUCTORS GA300, GA300A, GA301, GA301A SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Diode LT 432

Abstract: rgk 20/2 GA300 GA301 GA301A GB301 CA301A GA300A GB300 GB300A
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device

GA300TD60U

Contextual Info: PD -50057D GA300TD60U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

TE 555-1

Abstract: 419 on 80 GA201A 2n3031 2n2031
Contextual Info: Micmsemj Silicon Controlled Rectifiers Part Num ber GA200 GA200A GA300 GA300A GA201 GA201A GA301 GA301A GA100 GA101 GA102 2N3027 2N3Q30 ID100 JAN2N3027 JAN2N3030 JANTX2N3027 JANTX2N3030 2N3028 2N3031 AA100 AA107 AA114 ID101 JAN2N3028 JAN2N3031 JANTX2N3028

GA300TD60s

Contextual Info: GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 300 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse

GA300TD60U

Contextual Info: PD -5.057C PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA300TD60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

thyristor 1a 60v

Abstract: GA301 GA301A ga300 unitrode GA300 GA300A GB300 GB300A GB301 GB301A
Contextual Info: GA300 GA300A GA301 GA301A SCRs Commercial Nanosecond Switching Planar FEATURES • Rise Tim e: 10ns • Delay Tim e: 10ns • Recovery Tim e: 0.5,us • Pulse C urrent: to 100A • Turn-on w ith 20ns, 10mA gate pulse GB300 GB300A GB301 GB301A DESCRIPTION U n itro d e ’s N anosecond T h y ris to r S w itch com bin e s th e tu rn -on speed o f logic level

Contextual Info: GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 300 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse

DIODE 1439

Abstract: 60 27755 GA300TD60U
Contextual Info: PD -50057E GA300TD60U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA300TD60S

Contextual Info: GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 300 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse

Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar FEATURES • Rise Time: 10ns • Delay Time: 10ns • Recovery Time: 0.5/<s • Pulse Current: to 100A • Turn-on with 20ns, 10mA gate pulse GB300 GB300A GB301 GB301A DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the tum-on speed of logic level

GA300TD60U

Contextual Info: PD -5.057C PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA300TD60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device

Contextual Info: PD -5.057C International lO R R e c tifi GT P R E LIM IN A R Y "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA300TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200

Contextual Info: GA300TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” Standard Speed IGBT , 300 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse

c556

Abstract: c447 C307 IRG4PH50UD
Contextual Info: IGBTs International IO R Rectifier The IGBT Navigator KEY: COLOR CODING: EXISTING Product« _ production in last 6-9 months Part number •POTEMTlAi. UPCOMftâ to be released within next 3-4 months ^ no current plans., seebus.mgmt. P age Number Date for Samples

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

AXP 209

Abstract: UPD65031 UPD65070 UPD65006 intel 80487 SCX6206 HG62B40 UPD65022 mb86901 UPD71641
Contextual Info: _► ADVANCED Device to PGA Socket Cross Reference INTERCONNECTIONS. 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850 / 401-823-5200 •Fax 401-823-8723 ■Email advintcorp@aol.com ■Internet http://www.advintcorp.com Actel Device#

mx 362-0

Abstract: LV432403X63A400 29450 SCHNEIDER LV432757 Schneider NSX 400 F schneider NS1250 MICROLOGIC 2.0 LV431411X62A250 EZC100N3040 LV4A3F100100B4 LV429270
Contextual Info: Price List Low Voltage Distribution Products With effect from February 01, 2013 Price List Contents Prisma iPM: A range of Kit based LV panels . . . . . . . . . . . . . 1 EasyPact EZC: b MCCBs for Distribution Network . . . . . . . . . . . . . . . . . . . . . . 3

HEXFET

Abstract: GA200TD120U GA500TD60U GA100TS60U
Contextual Info: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 14 June, 1999

Sfor1b42

Abstract: 2SF102B CW12B 2N50S1 E0102FB FBase-F Package SFOR3B
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 25 30 35 40 45 50 55 2N88S 2N4333 2N5724 GA10l GA200 GA200A GB200 GB200A AAl00 AA107 2N3031 AA114 2N3028 MCR203 E0100FD E0102FA E0102FB E0102FD 10101 MMBS50S1 BRX45 BRX45 C203YY SlYY BRY55-S0 BRY55SS0

IRG41BC20W

Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Contextual Info: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles

FZH 261

Abstract: FZH 181 gal 16v8 programming algorithm FZH 201 VP16V8E-25 FZL 111 VP16V8 VP16V8EPC fzl 181
Contextual Info: I V L S I V P 1 6 V 8E TECHNOLOGY INC _72 D E =1300347 ODOD4QS b Ò T -4 lt'l3 47 PRELIMINARY GENERIC ARRAY LOGIC FEATURES • Replaces all series 20 bipolar PAL* devices — Output Drive 24 mA IOL • High performance CMOS technology Low Power: 90 mA Max Active