20NST Search Results

Contextual Info: FINAL M A C H 130- 15/20 High-Density EE CMOS Programmable Logic a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 70 Inputs ■ 64 Macrocells ■ 64 Outputs ■ 15 ns tpD Commercial ■ 64 Flip-flops; 4 clock choices 20nstpo Military ■ 4 “PAL26V16” Blocks with buried Macrocells

diode 944 lg

Abstract: B301A ga331 LT 943 diode 945 lg
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEA TU RES DESCRIPTION • • • • • Unitrode’s Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this

PAL26V16

Abstract: teradyne lasar
Contextual Info: FINAL COM’L: -15/20 IND: -18/24 Z I Advanced Micro Devices M A C H 1 3 0 - 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 15 ns tpD Commercial

74S450

Abstract: KU16 74s2708
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Sem iconductor Group Bipolar Memory Data Manual S EPT EM BER 1977 T exas In s t r u m e n t s ? 7 SCH O TTKYf SERIES 54S/74S PROGRAMMABLE READ-ONLY MEMORIES PROMS Choice of Three-State or Open Collector

2SK582

Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
Contextual Info: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS

Contextual Info: bOE D • D S 5 7 5 2 b D0 33 D3 5 3QS AMDS ADV MICRO P L A / P L E / A R R A Y S COM’L: -15/20 MIL: -20 M A C H 1 3 0 -1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ 84 Pins ■ 70 Inputs ■ 64 Macrocells

Contextual Info: F IN A L COM’L: -12/15/20 IND: -14/18/24 MACH215-12/15/20 High-Density EE CMOS Programmable Logic a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 32 Output Macrocells ■ ■ ■ ■ 67 MHz fMAx external Commercial 42 MHz fMAx external Industrial

Contextual Info: ACTIVE DIGITAL DELAY LINES RESISTORS *CAPS S C O tS •DELAY L WES A0805 SERIES 5-TAP 8-PIN DIP SA0805 SERIES 5-t a p 8-p in s ip A1405 SERIES 5-TAP 8-PIN DIP A1410 SERIES 10-t a p 14-p in d ip Wide selection of sizes! R C D ’s digital delay lines have been designed to provide precise tap

2SK645

Abstract: 2SK630 2SK626 2sk633 2SK63 2SK621 2SK647 2SK628 2SK629 2SK635
Contextual Info: - 58 - Sí £ tt A f ffl MOS N E 200 DSX RF PA,SW MOS N E 800 DSS ±20 S V/UHF LN A GaAs N D 10 DSX RF A, t'ftltitl MOS N E 70 DSS * a % * 2SK617 « ± W 8 tëff 2SK618 2SK619 2SK62Û 2SK521 BÍL féT féT 2SK622 2SK623 2SK624 B aL föT 2SK625 V * fi JÈ

74S201

Abstract: 82S117 8205 cam memory circuit 2102-2 RAM 82s25 rom signetics 2670 82S214 2102 SRAM signetics 2501
Contextual Info: signotics 8204 8205 82S 214 82S215 20 4 8 -B IT BIPOLAR ROM 256x8 ROM ) 4 0 9 6 -B IT B IPOLAR ROM (512x8 ROM ) D IG ITA L 8000 S ER IES T T L / M E M O R Y DESCRIPTION PIN CONFIGURATION The 8 2 0 4 /8 2 S 2 1 4 and 8 2 0 5 /8 2 S 2 1 5 are S ch ottk y -c la m p e d

Contextual Info: HITACHI/ LO GI C / A R R A Y S / M E M "12 D E ] 4 4 ^ 2 0 3 D01Gt.n 2 92D HD74HC4514 1 06 19 # 4-bit Latch/4-to- 16-line Decoder This device presents a 4 to-16 line decoder with latched inputs. The HD74HC4514 presents a high level at the selected output.

Contextual Info: COM’L: -15/20, Q-25 MACH435-15/20, Q-25 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Up to 20 product terms per function, with XOR ■ 128 Macrocells ■ Flexible clocking ■ l5nstpD

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

UA78HGSC

Abstract: SL490DP N82S100 TCA280A ne5534h UA78HGS mw RADIO RECEIVER IC zn414 TCA280A equivalent MM58174 ML929DP
Contextual Info: V o ltag e R eg ulator S electio n C hart Positive Three Terminal Regulators Output Current§ Package + 5V + 6V + 8V + 12V + 15V + 18V + 24V TO-92 LM78L05ACZ — — _ _ LM78L12ACZ LM78L15ACZ 0.1A .0 — — TO-92 LM340LAZ-5 _ _ LM340LAZ-12 LM340LAZ-15

30A044

Contextual Info: 16 Megabit High Speed C M O S SRAM D E N S E - P A C MICROSYSTEMS DPS512X32BV3 DESCRIPTION: The DPS512X32BV3 'V ERSA -ST A C K " module is a revolutionary new high speed memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCQ mounted on a co-fired ceramic

Contextual Info: PRELIMINARY COM’L: -15/20 MACH465-15/20 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 208 pins In PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, in-clrcult programmable ■ Flexible clocking

mach445 family amd

Contextual Info: FINAL COM’L: -15/20 H MACH445-15/20 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 100-pin version of the MACH435 in PQ FP Up to 20 product terms per function, with XOR ■ 5 V, in-clrcuit programmable Flexible clocking

pa1556h

Abstract: pa1556ah PA1520H pa1572h PA1523H PA1526H PA1601 pa1603cx PA1500H PA1501H
Contextual Info: - 172 - f m £ tt: m € & m s 1 . ft * Ê il’ K V n * (V) ß PA573T NEC MOS P E - 30 D S S ±7 U PA602T NEC MOS N E 50 D SS ±20 ß PA603T NEC MOS P E - 50 D S S ±16 SW ß PA606T NEC sw MOS N E 50 D S S ±20 U PA607T NEC SW MOS P E - 50 D SS ±16

82S123 programming

Abstract: PJ 3139 prom 82S126 NCE8205 82s131 programming Signetics 2513 SIGNETICS prom ttl 512 CM340 82s129 programming Signetics 2608
Contextual Info: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO

210AQ

Abstract: pal22v16 mach210
Contextual Info: bOE » • 0SS7S2L. Ü Ü 3 3 D S D bll I AMDS ADV MICRO P L A / P L E / A R R A Y S COM’L :-10/12/15/20,0-15/20 MIL:-20 MACH210A-10 MACH210-12/15/20 MACH21OAQ-15/20 High-Density EE CMOS Programmable Logic a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS

MACH465

Abstract: MACH465-12 MACH465-15 ge-57
Contextual Info: FINAL M A C H 4 6 COM’L: -12/15/20 5 - 1 2 / 1 5 / 2 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 208 pins in PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, in-circuit programmable

Contextual Info: a n A I UI * ADS-933 16-Bit, 3MHz Sampling A/D Converters INNOVATION and EXCELLENCE p r e l im i n a r y p r o d u c t d a ta FEATURES • • • • • • • • • 16-bit resolution 3MHz sampling rate Functionally complete No missing codes over full military tem perature range

SIGNETICS prom

Abstract: 82s129 programming 82S100 pin diagram of LED dot matrix display 9x9 Signetics TTL MIMI Ti PROM programming procedure Signetics 2513 82s131 programming 2048 bit 256x8 bipolar prom N82S130
Contextual Info: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO